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    TRANSISTORS C 547 Search Results

    TRANSISTORS C 547 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS C 547 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC547ATA

    Abstract: hie for bc547b BC547BTA BC546BTA BC556.BC558 BC547 hie hre hfe BC547 vishay bc548 pnp BC547B vishay BC556-BC558
    Text: BC546 / 547 / 548 Vishay Semiconductors Small Signal Transistors NPN Features C 1 • NPN Silicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied


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    PDF BC546 BC547 BC548 BC556. BC558 BC546A BC546B BC54ake D-74025 BC547ATA hie for bc547b BC547BTA BC546BTA BC556.BC558 BC547 hie hre hfe BC547 vishay bc548 pnp BC547B vishay BC556-BC558

    hie for bc547b

    Abstract: BC547 hie hre hfe BC547B-BULK BC547ATA BC556-BC558 BC546 BC556.BC558 fbc547 BC546B BC547A
    Text: BC546 / 547 / 548 Vishay Semiconductors Small Signal Transistors NPN Features C 1 • NPN Silicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied


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    PDF BC546 BC547 BC548 BC556. BC558 D-74025 02-Nov-04 hie for bc547b BC547 hie hre hfe BC547B-BULK BC547ATA BC556-BC558 BC556.BC558 fbc547 BC546B BC547A

    BC547B vishay

    Abstract: BC547ATA hie for bc547b BC547 vishay BC547 hie hre hfe BC556-BC558 bc548 pnp BC556.BC558 BC547B-TAP BC548 hie hre hfe
    Text: BC546 / 547 / 548 VISHAY Vishay Semiconductors Small Signal Transistors NPN Features • NPN Silicon Epitaxial Planar Transistors • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied


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    PDF BC546 BC547 BC548 BC556. BC558 BC546A BC546Bake D-74025 25-Mar-04 BC547B vishay BC547ATA hie for bc547b BC547 vishay BC547 hie hre hfe BC556-BC558 bc548 pnp BC556.BC558 BC547B-TAP BC548 hie hre hfe

    BC5478

    Abstract: Bc 547 b cdil transistor BC 547 datasheet tr bc548 t1 BC547 free download transistor(BC547) data sheet transistor BC 547 bc548 pin details Bc 547 NPN transistor T1 BC548
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC 546, A, B, C BC 547, 8, A, B, C TO-92 EBC NPN General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio


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    PDF BC546 C-120 BC5478 Bc 547 b cdil transistor BC 547 datasheet tr bc548 t1 BC547 free download transistor(BC547) data sheet transistor BC 547 bc548 pin details Bc 547 NPN transistor T1 BC548

    BC547 MOTOROLA

    Abstract: BC547
    Text: MOTOROLA Order this document by BC546/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 546 BC 547 BC 548 Unit Collector – Emitter Voltage VCEO


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    PDF BC546/D BC546, BC547, BC548, BC546/D* BC547 MOTOROLA BC547

    BC547

    Abstract: BC547 MOTOROLA transistor BC 547B BC548C MOTOROLA BC546B MOTOROLA BC547 application notes bc 548b transistor BC548 bc546 motorola Datasheet of bc 547 b
    Text: MOTOROLA Order this document by BC546/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 546 BC 547 BC 548 Unit Collector – Emitter Voltage VCEO


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    PDF BC546/D BC546, BC547, BC548, BC546/D* BC547 BC547 MOTOROLA transistor BC 547B BC548C MOTOROLA BC546B MOTOROLA BC547 application notes bc 548b transistor BC548 bc546 motorola Datasheet of bc 547 b

    BC546B

    Abstract: BC548BC BC548 pin diagram bc547 pin diagram bc548b BC547BG BC548 operation BC547A BC548BG BC547 application notes
    Text: BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC546 BC547 BC548 BC546 BC547


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    PDF BC546B, BC547A, BC548B, BC546 BC547 BC548 BC546/D BC546B BC548BC BC548 pin diagram bc547 pin diagram bc548b BC547BG BC548 operation BC547A BC548BG BC547 application notes

    Untitled

    Abstract: No abstract text available
    Text: BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage BC546 BC547 BC548 Collector - Base Voltage BC546 BC547


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    PDF BC546B, BC547A, BC548B, BC546 BC547 BC548 BC546/D

    BC54x

    Abstract: BC546B BC547BG BC548B BC548BG NPN transistor bc548 BC 54x BC548BC BC547C-G BC547A
    Text: BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC546 BC547 BC548 Collector - Base Voltage Vdc


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    PDF BC546B, BC547A, BC548B, BC546 BC547 BC548 BC546/D BC54x BC546B BC547BG BC548B BC548BG NPN transistor bc548 BC 54x BC548BC BC547C-G BC547A

    BC548 pin diagram

    Abstract: BC548BC BC546b operation BC54x BC546B BC 54x BC548BG BC547BG BC547A BC548B
    Text: BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC546 BC547 BC548 Collector - Base Voltage Vdc


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    PDF BC546B, BC547A, BC548B, BC546 BC547 BC548 BC546/D BC548 pin diagram BC548BC BC546b operation BC54x BC546B BC 54x BC548BG BC547BG BC547A BC548B

    BC546B

    Abstract: BC548BC BC548B BC548 operation BC548BRL1 BC547A BC54xx BC546b operation BC548BZL1 BC548
    Text: BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC546 BC547 BC548 Collector-Base Voltage BC546 BC547


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    PDF BC546B, BC547A, BC548B, BC546 BC547 BC548 BC54xx BC546B BC548BC BC548B BC548 operation BC548BRL1 BC547A BC54xx BC546b operation BC548BZL1

    BC547

    Abstract: BC546B BC54xx BC547A BC548B BC54x bc 548b transistor BC548BZL1G BC548BC BC548BZL1
    Text: BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC546 BC547 BC548 Collector-Base Voltage


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    PDF BC546B, BC547A, BC548B, BC546 BC547 BC548 BC546/D BC547 BC546B BC54xx BC547A BC548B BC54x bc 548b transistor BC548BZL1G BC548BC BC548BZL1

    2N1936

    Abstract: 2N1937
    Text: TYPES 2N1936, 2N1937 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS High Power Dissipation: 150 watts at Tc = 100° C low Thermal Resistance: 0.5 C° / w max max @ l c • 10 a Low Saturation Voltage: Vce=0.75 High fT : 18 me min at 10 v, 1 a


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    PDF 2N1936, 2N1937 2N1936

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    transistor vc 548

    Abstract: Transistor Bc54
    Text: SyrnSEMi SYM5EMI SEMICONDUCTOR BC 546, A, BC 547 A, BC 548, A, T O -92 B, C B, C B, C Plastic Encapsulate Transistors TRANSISTOR NPN TO — 92 FEATURES Power dissipation (Tamb=25 °C ) PCM : 0.625 W Collector current 1cm : 0.1 A Collector base voltage 1. COLLECTOR


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    PDF BC546 BC547 BC548 270TYP 050TYP transistor vc 548 Transistor Bc54

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    BC548

    Abstract: bc547 bc546c transistor NPN 548 C 547 c bc546 transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548
    Text: ICC TO-92 Plastic-Encapsulate Transistors BC546,B/BC547fA,BfC/BC548,A,B,C TRANSISTOR NPN FEATURES on P cm ; IcM: 0 .6 2 5 W (T a m b = 2 5 ° C ) 0 .1 A WÊmÊ&m voltage V cbo: B C 546 : 80V B C 547 : 50V B C 548 : 30V S iÊ l^M Ê Ê p^àA d.ataraaa junction tem perature range


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    PDF BC546 B/BC547fA BfC/BC548 BC547 BC548 BC548 bc546c transistor NPN 548 C 547 c transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548

    BDS61A

    Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
    Text: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a


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    PDF BDS61 OT223) BDS60/60A/60B/60C. OT223 BDS61A BDS61B BDS61C smd npn darlington Darlington NPN Silicon Diode smd diode LC 61 SMD 547 DIODE

    C 547 B pin configuration

    Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
    Text: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max


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    PDF CB-76 BC317P. C 547 B pin configuration transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B

    c546b

    Abstract: c547b C548C C547 b c547 C546 c548b C546 A c546 B c547c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B BC547, A, B, C BC548, A, B, C NPN Silicon COLLECTOR 1 2 BASE" 3 EMITTER MAXIMUM RATINGS Sym bol B C546 B C547 B C 548 U nit Collector-Em itter Voltage R ating VCEO 65 45 30 Vdc C o lle c to r-B a s e Voltage


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    PDF BC546, BC547, BC548, BC547/BC548 BC546 c546b c547b C548C C547 b c547 C546 c548b C546 A c546 B c547c

    Untitled

    Abstract: No abstract text available
    Text: • bfc,S3S31 DDETTbfl 15b H A P X N AMER PHILIPS/DISCRETE JC546 to 548 b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N PN transistors in a plastic TO-92, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A


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    PDF S3S31 JC546 JC547 JC548 0027T72 bbS3R31 D0E757L, JC546A

    BDT63

    Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
    Text: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general


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    PDF BDT63; BDT63B; 711DflHh T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A

    NTE 956

    Abstract: 54IH NTE312 NC3A
    Text: POWER MOS FIELD EFFECT TRANSISTORS Description and Application 2392 N -C H A N N EL Enhancement Mode High Speed Switch N -C H A N N EL Enhancement Mode High Speed Switch N -C H A N N EL Enhancement Mode High Speed Switch N -C H A N N EL Enhancement Mode High


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    PDF T0247 NTE 956 54IH NTE312 NC3A

    Untitled

    Abstract: No abstract text available
    Text: II N AMER P H IL IP S /D IS C R E T E 5SE D bb53T31 a o n o b i s BUX48 BUX48A T - 3 3 - ls ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.


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    PDF bb53T31 BUX48 BUX48A