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    TRANSISTORS MARKING HK Search Results

    TRANSISTORS MARKING HK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) Visit Rochester Electronics LLC Buy
    54F350/BEA Rochester Electronics LLC 54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) Visit Rochester Electronics LLC Buy
    5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/B2A Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) Visit Rochester Electronics LLC Buy

    TRANSISTORS MARKING HK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bcw81

    Abstract: BCW71
    Text: r = T S G S - T ^7 # f H O M S O N u so m o cs BCW71/72/81 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW71 K1 BCW72 K2 BCW81 K3 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ LOW LEVEL AUDIO AMPLIFICATION AND


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    BCW71/72/81 BCW71 BCW72 BCW81 OT-23 100MHz 7R2R237 /BCW72/BCW81 OT-23 PDF

    Mpsa42

    Abstract: mpsa 102
    Text: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation


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    Q68000-A413 Q68000-A4809 42/4J 235b05 Mpsa42 mpsa 102 PDF

    Q62702F1240

    Abstract: f 840 h marking NC
    Text: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for com m on emitter R F, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code PinC 'onfigu •ation 1 2 3 Package1


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    Q62702-F1240 62702-F1287 Q62702F1240 f 840 h marking NC PDF

    transistor BC 236

    Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
    Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation


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    BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK PDF

    S763T

    Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
    Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm


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    000543Q 569-GS S763T JY marking transistor TRANSISTOR SOT-23 marking JE PDF

    aot 1106

    Abstract: transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400
    Text: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'Jb O D O IS ia ■ ALGG BUX 84 • BUX 85 Silicon NPN Power Transistors r - 3 3 - ii ! Applications: Switching mode power supply Features: • Short switching times • Power dissipation 40 W • In multi diffusion technique


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    15A3DIN aot 1106 transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400 PDF

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


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    2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846 PDF

    K68A

    Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
    Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E


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    SC-59 DO-35 SC-63) T0-220AB K68A a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTD133HKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.


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    CHDTD133HKPT SC-59/SOT-346) SC-59/SOT-346 100OC -40OC PDF

    2N499A

    Abstract: FBT Hr transistor marking WC 2C marking EHG 2N499 transistor KIN
    Text: MIL-S-1950C/72C KL 2 AUGUST 1967 SurERSZDISQ HH-S-15^00/?2B(Sig C) 8 January 1962 MILITASI SPECIFICATICS. TRANSISTOR, PNP, QEKMAHUM T iro s ¿ui&9 axtd ZHU99A 1. SCOPE 1.1 Scepe»- Thio specification oarers the ¿stall requirtnients for geraanim, PSP, transistors for particular nse In bigh-frequencv. qn4paent-circtìLt explications.


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    MIL-S-19S0C/72C ZHU99A 2HU99 2HU99A 2Bk99, 2N499A FBT Hr transistor marking WC 2C marking EHG 2N499 transistor KIN PDF

    Zener diode smd marking S4

    Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
    Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.


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    R1407, R1401, Zener diode smd marking S4 DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz PDF

    TRANSISTOR HK SMD

    Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage


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    2SD1006 100mA 500mA -10mA TRANSISTOR HK SMD smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05  Optimum for high-density mounting and downsizing of the equipment


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    2002/95/EC) UNR92A9J PDF

    j3y transistor

    Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
    Text: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR( NPN ) SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W(Tamb=25℃) 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS(


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    S8050LT1 OT--23 500mA 100mA 30MHz S8050LT1 j3y transistor transistor j3y MARKING J3Y SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y PDF

    Untitled

    Abstract: No abstract text available
    Text: TMP422-EP SBOS577 – SEPTEMBER 2011 www.ti.com ±1°C REMOTE TEMPERATURE AND ±2.5°C LOCAL TEMPERATURE SENSOR IN SOT23-8 Check for Samples: TMP422-EP FEATURES 1 • • • • • • • • • 234 SOT23-8 Package ±1°C Remote Diode Sensor Max ±2.5°C Local Temperature Sensor (Max)


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    TMP422-EP SBOS577 OT23-8 OT23-8 PDF

    UNR92A9J

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.80±0.05 1.60+0.05 −0.03 1.00±0.05  Optimum for high-density mounting and downsizing of the equipment


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    2002/95/EC) UNR92A9J UNR92A9J PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C


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    2002/95/EC) UNR32A9 PDF

    UNR32A9

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05


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    UNR32A9 UNR32A9 PDF

    ic 556 datasheet

    Abstract: sot-23 Marking M1F MMBT5550LT1 MMBT5551LT1 WMBT5551LT1 mmbt5550
    Text: WMBT5551LT1 COLLECTOR 3 NPN Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 160 Vdc Collector – Emitter Voltage VCEO Collector – Base Voltage VCBO 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous


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    WMBT5551LT1 236AB) ic 556 datasheet sot-23 Marking M1F MMBT5550LT1 MMBT5551LT1 WMBT5551LT1 mmbt5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05  Optimum for high-density mounting and downsizing of the equipment


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    2002/95/EC) UNR92A9J PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9G Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption


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    2002/95/EC) UNR32A9G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Features  Package  Costs can be reduced through downsizing of the equipment and reduction of


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    2002/95/EC) UNR52A9G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Features  Package  Optimum for high-density mounting and downsizing of the equipment


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    2002/95/EC) UNR92A9G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C


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    2002/95/EC) UNR32A9 PDF