bcw81
Abstract: BCW71
Text: r = T S G S - T ^7 # f H O M S O N u so m o cs BCW71/72/81 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW71 K1 BCW72 K2 BCW81 K3 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ LOW LEVEL AUDIO AMPLIFICATION AND
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BCW71/72/81
BCW71
BCW72
BCW81
OT-23
100MHz
7R2R237
/BCW72/BCW81
OT-23
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Mpsa42
Abstract: mpsa 102
Text: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation
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Q68000-A413
Q68000-A4809
42/4J
235b05
Mpsa42
mpsa 102
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Q62702F1240
Abstract: f 840 h marking NC
Text: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for com m on emitter R F, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code PinC 'onfigu •ation 1 2 3 Package1
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Q62702-F1240
62702-F1287
Q62702F1240
f 840 h
marking NC
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transistor BC 236
Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation
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BC635
15A3DIN
transistor BC 236
bc 106 transistor
transistors marking HK
transistor C 639 W
transistors BC 23
bc 569
A27 637
transistor BC 639
A27 639
marking code transistor HK
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S763T
Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm
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000543Q
569-GS
S763T
JY marking transistor
TRANSISTOR SOT-23 marking JE
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aot 1106
Abstract: transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400
Text: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'Jb O D O IS ia ■ ALGG BUX 84 • BUX 85 Silicon NPN Power Transistors r - 3 3 - ii ! Applications: Switching mode power supply Features: • Short switching times • Power dissipation 40 W • In multi diffusion technique
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15A3DIN
aot 1106
transistor bc 209 npn
transistor BC 209
transistor BUX
bux 84
MARKING BUX
AL6 marking
BF 212 transistor
telefunken ta 400
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TRANSISTOR MARKING YB 1L
Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738
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2SC4841
OT89/SC62)
TRANSISTOR MARKING YB 1L
2SK 2SA 2SC equivalent
ON 4497 HF transistor
1B01F
transistor 2sc 1586
i203 transistor
transistor 2sk power amp
transistor bc 2sk
transistor 2sk 70
TBC846
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTD133HKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.
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CHDTD133HKPT
SC-59/SOT-346)
SC-59/SOT-346
100OC
-40OC
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2N499A
Abstract: FBT Hr transistor marking WC 2C marking EHG 2N499 transistor KIN
Text: MIL-S-1950C/72C KL 2 AUGUST 1967 SurERSZDISQ HH-S-15^00/?2B(Sig C) 8 January 1962 MILITASI SPECIFICATICS. TRANSISTOR, PNP, QEKMAHUM T iro s ¿ui&9 axtd ZHU99A 1. SCOPE 1.1 Scepe»- Thio specification oarers the ¿stall requirtnients for geraanim, PSP, transistors for particular nse In bigh-frequencv. qn4paent-circtìLt explications.
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MIL-S-19S0C/72C
ZHU99A
2HU99
2HU99A
2Bk99,
2N499A
FBT Hr
transistor marking WC 2C
marking EHG
2N499
transistor KIN
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Zener diode smd marking S4
Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.
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R1407,
R1401,
Zener diode smd marking S4
DIAC DB2
melf ZENER diode COLOR BAND
gps 1575R
melf ZENER diode COLOR CODE
LTWC455E
zener smd marking 931
1575R
SR360* EQUIVALENT
Tuning Fork Crystal 40khz
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TRANSISTOR HK SMD
Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage
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2SD1006
100mA
500mA
-10mA
TRANSISTOR HK SMD
smd ic marking HL
smd marking HK
transistors marking HK
HL 100 Transistor
HL 06 ic
2SD1006
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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2002/95/EC)
UNR92A9J
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j3y transistor
Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
Text: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR( NPN ) SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W(Tamb=25℃) 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS(
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S8050LT1
OT--23
500mA
100mA
30MHz
S8050LT1
j3y transistor
transistor j3y
MARKING J3Y
SOT-23 J3Y
s8050l
S8050LT1-J3Y
sot-23 Marking J3Y
transistors marking HK
S8050LT1 J3Y
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Untitled
Abstract: No abstract text available
Text: TMP422-EP SBOS577 – SEPTEMBER 2011 www.ti.com ±1°C REMOTE TEMPERATURE AND ±2.5°C LOCAL TEMPERATURE SENSOR IN SOT23-8 Check for Samples: TMP422-EP FEATURES 1 • • • • • • • • • 234 SOT23-8 Package ±1°C Remote Diode Sensor Max ±2.5°C Local Temperature Sensor (Max)
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TMP422-EP
SBOS577
OT23-8
OT23-8
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UNR92A9J
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.80±0.05 1.60+0.05 −0.03 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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2002/95/EC)
UNR92A9J
UNR92A9J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32A9
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UNR32A9
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05
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UNR32A9
UNR32A9
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ic 556 datasheet
Abstract: sot-23 Marking M1F MMBT5550LT1 MMBT5551LT1 WMBT5551LT1 mmbt5550
Text: WMBT5551LT1 COLLECTOR 3 NPN Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 160 Vdc Collector – Emitter Voltage VCEO Collector – Base Voltage VCBO 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous
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WMBT5551LT1
236AB)
ic 556 datasheet
sot-23 Marking M1F
MMBT5550LT1
MMBT5551LT1
WMBT5551LT1
mmbt5550
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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2002/95/EC)
UNR92A9J
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9G Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption
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2002/95/EC)
UNR32A9G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Features Package Costs can be reduced through downsizing of the equipment and reduction of
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2002/95/EC)
UNR52A9G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Features Package Optimum for high-density mounting and downsizing of the equipment
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Original
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2002/95/EC)
UNR92A9G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32A9
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PDF
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