Untitled
Abstract: No abstract text available
Text: S525T VISHAY Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • Integrated gate protection diodes • Low feedback capacitance • Low noise figure 2 3 Applications High frequency stages up to 300 MHz. D G Mechanical Data
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S525T
OT-23
S525T
D-74025
02-Sep-04
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Untitled
Abstract: No abstract text available
Text: S525T VISHAY Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features 1 • Integrated gate protection diodes • Low feedback capacitance • Low noise figure 2 Applications 3 High frequency stages up to 300 MHz. D Mechanical Data G
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S525T
S525T
OT-23
D-74025
25-Jul-03
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BB515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Nov-08-2002
BB515
BF999
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BF543A
Abstract: BF543A-GS08 BF543B-GS08
Text: Not for new design, this product will be obsoleted soon BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component
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BF543
2002/95/EC
2002/96/EC
OT-23
BF543A
BF543B
BF543A-GS08
BF543B-GS08
18-Jul-08
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BCW66
Abstract: No abstract text available
Text: BF999E6393 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferable in FM applications 1 • Pb-free ROHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BF999E6393
BCW66
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marking code 11s
Abstract: MARKING CODE 21S BF543
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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PDF
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BF543
VPS05161
marking code 11s
MARKING CODE 21S
BF543
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Untitled
Abstract: No abstract text available
Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S
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BF999
VPS05161
Apr-06-2005
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Untitled
Abstract: No abstract text available
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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BF543
VPS05161
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BF999
Abstract: triode sot23
Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S
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Original
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PDF
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BF999
VPS05161
BF999
triode sot23
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BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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PDF
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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BF999
Abstract: triode sot23
Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package
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PDF
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BF999
BF999
triode sot23
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n-channel SOT-23 Depletion Mode
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon S525T Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • • • • • Integrated gate protection diodes Low feedback capacitance e3 Low noise figure Lead Pb -free component
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Original
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PDF
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S525T
2002/95/EC
2002/96/EC
OT-23
S525T
18-Jul-08
n-channel SOT-23 Depletion Mode
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Untitled
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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Original
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PDF
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BF999
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BF543
Abstract: triode sot23
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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Original
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PDF
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BF543
VPS05161
Jun-28-2001
EHT07033
EHT07034
BF543
triode sot23
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BF543A
Abstract: BF543
Text: BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Original
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PDF
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BF543
2002/95/EC
2002/96/EC
OT-23
OT-23
D-74025
05-Jul-05
BF543A
BF543
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bb515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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PDF
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Jun-28-2001
bb515
BF999
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Q62702-F1372
Abstract: No abstract text available
Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62702-F1372
OT-23
Q62702-F1372
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BF543A
Abstract: BF543B-GS08 BF543 BF543BGS08
Text: BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Original
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PDF
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BF543
2002/95/EC
2002/96/EC
OT-23
BF543A
BF543A-GS08
BF543B
BF543B-GS08
08-Apr-05
BF543A
BF543B-GS08
BF543
BF543BGS08
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Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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Original
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PDF
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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Untitled
Abstract: No abstract text available
Text: BF543 Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Features • • • • • 1 Integrated gate protection diode Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Original
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PDF
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BF543
2002/95/EC
2002/96/EC
OT-23
BF543
08-Apr-05
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BF 22 W
Abstract: No abstract text available
Text: BF 543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration
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Original
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PDF
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VPS05161
OT-23
Dec-13-1999
EHT07033
EHT07034
BF 22 W
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n-channel SOT-23 Depletion Mode
Abstract: No abstract text available
Text: S525T Vishay Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode 1 Features • • • • • Integrated gate protection diodes Low feedback capacitance e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Original
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PDF
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S525T
2002/95/EC
2002/96/EC
OT-23
S525T
D-74025
29-Apr-05
n-channel SOT-23 Depletion Mode
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MARKING CODE 21S
Abstract: 12NA50
Text: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped
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OCR Scan
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PDF
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Q62702-F1230
OT-23
MARKING CODE 21S
12NA50
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1372
OT-23
EHT07032
300MHz
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