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    TRUTH TABLE STATIC RANDOM ACCESS MEMORY SRAM Search Results

    TRUTH TABLE STATIC RANDOM ACCESS MEMORY SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    TRUTH TABLE STATIC RANDOM ACCESS MEMORY SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYG-100

    Abstract: IDT70P269 BYG100 7146 BY100- 70P259 BY100 70P24 70P25
    Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P269/259/249L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location Both ports configurable to standard SRAM or timemultiplexed address/data interface


    Original     		PDF 16K/8K/4K IDT70P269/259/249L BY100) 70P269 70P259 70P249 BYG-100 IDT70P269 BYG100 7146 BY100- 70P259 BY100 70P24 70P25

    qml-38535

    Abstract: M38510-24502BVA as 15-f HM1-6514S8
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. 67268. 1987 OCT 23 M. A. Frye


    Original     		PDF M38510 qml-38535 M38510-24502BVA as 15-f HM1-6514S8

    Untitled

    Abstract: No abstract text available
    Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P269/259/249L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location Both ports configurable to standard SRAM or timemultiplexed address/data interface


    Original     		PDF 16K/8K/4K IDT70P269/259/249L BY100) 70P269 70P259 70P249

    IDT70P245

    Abstract: No abstract text available
    Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P265/255/245L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location One port with dedicated time-muliplexed address/data ADM interface


    Original     		PDF 16K/8K/4K IDT70P265/255/245L IDT70P265/255/245L 70P265 70P255 70P245 70P265/255/245 PA1109-01) IDT70P245

    BY100

    Abstract: 245l A13R-A0R 70P25
    Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM Š IDT70P265/255/245L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location One port with dedicated time-muliplexed address/data ADM interface


    Original     		PDF 16K/8K/4K IDT70P265/255/245L BY100) 70P265 70P255 70P245 BY100 245l A13R-A0R 70P25

    HT6116-7LL

    Abstract: Volt, SPDM, CMOS SRAM CMOS SPDM Process HT6116-70 HT6116 -7LL HT6264-70 Holtek 0.8um, CMOS sram
    Text: HT6116-70 2K x 8 Bit SRAM Features • • • • • • • Single 5V power supply Low standby and operating power – Standby: 5µW Typ. – Operating: 400mW (Typ.) 70ns (Max.) high speed access time Neither external clock nor refreshing required •


    Original     		PDF HT6116-70 400mW 16384-bit 500mV HT6264-70 HT6116-7LL Volt, SPDM, CMOS SRAM CMOS SPDM Process HT6116 -7LL HT6264-70 Holtek 0.8um, CMOS sram

    NTE2147

    Abstract: No abstract text available
    Text: NTE2147 Integrated Circuit 4K Static Random Access Memory SRAM Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative


    Original     		PDF NTE2147 NTE2147 4096-bit 18-Lead 200mV -200mV Note10. Note12.

    Untitled

    Abstract: No abstract text available
    Text: FM28V102A 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM28V102A FM28V102A

    Untitled

    Abstract: No abstract text available
    Text: FM28V102A 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM28V102A FM28V102A

    Untitled

    Abstract: No abstract text available
    Text: September 2006 AS7C31025C 3.3V 128K X 8 CMOS SRAM Center power and ground Features • Industrial and commercial temperatures • Organization: 131,072 x 8 bits • High speed - 10/12 ns address access time - 5 ns output enable access time • Low power consumption via ship deselect


    Original     		PDF AS7C31025C 32-pin,

    Untitled

    Abstract: No abstract text available
    Text: FM21LD16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original     		PDF FM21LD16 151-year 30-ns

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY FM28V102 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes


    Original     		PDF FM28V102 151-year 30-ns FM28V102

    HT6264-70

    Abstract: No abstract text available
    Text: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • • • • Single 5V power supply Low power consumption – Operating: 200mW Typ. – Standby: 5µW (Typ.) 70ns (Max.) high speed access time Memory expansion by pin OE • Common I/O using tri-state outputs


    Original     		PDF HT6264-70 200mW 28-pin HT6264-70 536-bit 500mV

    HT6264-70

    Abstract: 8k8 rom
    Text: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • Operating voltage: 5V Low power consumption – Operation: 200mW typ. – Standby: 5µW (typ.) 70ns (max.) high speed access time Memory expansion by pin OE • • • • Pin-compatible with standard 8K×8


    Original     		PDF HT6264-70 200mW 28-pin HT6264-70 536-bit 500mV 8k8 rom

    HT6116 -7LL

    Abstract: HT6116-7LL HT6116 SRAM CMOS SPDM Process Volt, SPDM, CMOS Holtek 0.8um, CMOS sram
    Text: HT6116-7LL CMOS 2Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consumption – Operating: 180mW Typ. – Standby: 5µ W (Typ.) 70ns (Max.) high speed access time Power down by pin CS Memory expansion by pin OE


    Original     		PDF HT6116-7LL 180mW 24-pin HT6116-7LL 384-bit 500mV HT6116 -7LL HT6116 SRAM CMOS SPDM Process Volt, SPDM, CMOS Holtek 0.8um, CMOS sram

    Untitled

    Abstract: No abstract text available
    Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically


    Original     		PDF FM28V202A 44-pin 151-year 30-ns

    Untitled

    Abstract: No abstract text available
    Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically


    Original     		PDF FM28V202A 44-pin 151-year 30-ns

    tD014

    Abstract: CDIP2-T18 GDIP1-T18 001050b A81024
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M0-DA C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. no. 67268. 1987 OCT 23 M. A. Frye


    OCR Scan     		PDF 8102401VX 8102402VX M38510/24501BVX M38510/24502BVX. 296-5377S" BUL-103Â -BUL-103. 001050b tD014 CDIP2-T18 GDIP1-T18 A81024

    FPT-100P-M01

    Abstract: mcl m01 94 MB82VP036
    Text: February 1994 Edition 1.0 ADVANCE INFO. FUjlTSU DATASHEET MB82VP036 CMOS 32K x 36 SYNCHRONOUS SRAM CMOS 32768 WORDS BY 36-BIT SYNCHRONOUS STATIC RANDOM ACCESS MEMORY The Fujitsu MB82VP036 is a 1M bit CMOS Synchronous Static Random Access Memory SSRAM containing 1,179,648 memory cells accessible in a 36-bit


    OCR Scan     		PDF MB82VP036 36-BIT MB82VP036 QDDL057 FPT-100P-M01 mcl m01 94

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K


    OCR Scan     		PDF MS6M8512 PID041

    Untitled

    Abstract: No abstract text available
    Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B81 15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM - 256K Words x 1 Bit BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262,144 words x 1 bit and fabricated with a CMOS silicon gate process. BiCMOS technology is used in


    OCR Scan     		PDF MB82B81 256K-BIT MB82B81-15 MB82B81-20 MB82B81-20 24-LEAD

    TS280-A89Z

    Abstract: No abstract text available
    Text: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a


    OCR Scan     		PDF TS280-- MB82B71-15/-20 536-WORD MB82B71 300mil 24-LEAD LCC-24P-M02) TS280-A89Z

    Untitled

    Abstract: No abstract text available
    Text: November 1989 Edition 1.0 FUJITSU DATASHEET MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.


    OCR Scan     		PDF MB85420-40/-50 MB85420 MB81C81A 60-pin MB65420 MB81C81A, MB85420-40) MB85420-50) 500mV MB85420-40

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6134 4K X 8 CMOS Dual Port SRAM FEATURES DESCRIPTION • High-speed-35/45/55ns The M OSEL M S6134 is a 32,768 bit dual port static random access memory organized as 4,096 words by 8 bits allowing each port to independently access any location in memory. The M S6134 is ideal for systems that


    OCR Scan     		PDF High-speed-35/45/55ns S6134 325mW MS6134 MS6134 PIDO03 MS6134-35PC