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    TRW RF HYBRID AMP Search Results

    TRW RF HYBRID AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    JA4224-AL Coilcraft Inc DC-DC Booster Module, 1 Output, 100W, Hybrid, ROHS COMPLIANT PACKAGE-12 Visit Coilcraft Inc
    P206 Coilcraft Inc Designer's Kit, Mag Amp toroids, not RoHS Visit Coilcraft Inc Buy
    1812WBT1.5-2LC Coilcraft Inc RF Transformer, 2.75MHz Min, 135MHz Max, 1.5:1, ROHS COMPLIANT Visit Coilcraft Inc Buy
    1812WBT2-1LC Coilcraft Inc RF Transformer, 0.8MHz Min, 23MHz Max, 2:1, ROHS COMPLIANT Visit Coilcraft Inc Buy

    TRW RF HYBRID AMP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5109 motorola

    Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.


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    AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator PDF

    2SC1766C

    Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133


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    2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab PDF

    CA2820 TRW

    Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022
    Text: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power


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    AN1022/D AN1022 CA2820 TRW ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022 PDF

    RF2108

    Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
    Text: TA0011  TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier         RF Micro Devices introduces a new linear power amplifier for CDMA applications based on their HBT Heterojunction Bipolar Transistor technology. This power


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    TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011 PDF

    TPV 3100

    Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
    Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must


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    AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission PDF

    2SC288a

    Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517


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    2SC1675L

    Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A


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    TPV 3100

    Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the


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    AN1034/D AN1034 TPV 3100 TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG PDF

    2N907 PNP

    Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


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    2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 2N907 PNP 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP PDF

    2N2875

    Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N2875 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa PDF

    CA2820 TRW

    Abstract: UBJ-20 connector bnc MOTOROLA hybrid amplifiers* reliability MOTOROLA hybrid amplifiers CA2820 CA2870 632 transistor motorola ferroxcube 4C4 UBJ20 center tap transformer for rf signal
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1022/D AN1022 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Mechanical and Thermal Considerations in Using


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    AN1022/D AN1022 CA2820 TRW UBJ-20 connector bnc MOTOROLA hybrid amplifiers* reliability MOTOROLA hybrid amplifiers CA2820 CA2870 632 transistor motorola ferroxcube 4C4 UBJ20 center tap transformer for rf signal PDF

    transitron

    Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


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    2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 transitron rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP PDF

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664 PDF

    BC25SB

    Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL


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    HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576 BC25SB MRF547 S02907A 425M LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549 PDF

    Motorola Mil Std. 883

    Abstract: RADC-TR-67-108 aluminum solid capacitor mil std AN1025 motorola handbook MOTOROLA linear handbook trw RF POWER TRANSISTOR 217B motorola transistor handbook Motorola operational amplifier discrete
    Text: Order this document by AN1025/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1025 RELIABILITY CONSIDERATIONS IN DESIGN AND USE OF RF INTEGRATED CIRCUITS Prepared by: James Humphrey and George Luettgenau ABSTRACT DEFINITIONS Reliability is a major factor in the profitability of CATV


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    AN1025/D AN1025 Motorola Mil Std. 883 RADC-TR-67-108 aluminum solid capacitor mil std AN1025 motorola handbook MOTOROLA linear handbook trw RF POWER TRANSISTOR 217B motorola transistor handbook Motorola operational amplifier discrete PDF

    TDC1007J

    Abstract: TDC1007 IC STU 404 149A HA-5033 Hughes d 2539 transistor trw 1007 TDC-1007J T900
    Text: A Designers Guide for the HA-5033 Video Buffer Application Note November 1996 AN548.1 Introduction Intersil Corporation is an industry leader in the high speed, wideband, monolithic operational amplifier market. Due to the high performance of Intersil products, designers in the


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    HA-5033 AN548 TDC1007J TDC1007 IC STU 404 149A Hughes d 2539 transistor trw 1007 TDC-1007J T900 PDF

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor CA2875R trw rf hybrid amp TRW amplifier
    Text: RF Devices Division TRW Electronic Components Group CA2875R CA2875R Thin Film RF Linear Hybrid Amplifier • Wide Dynamic Range: +43dBm Third Order Intercept • Excellent Match at Input/Output: Lowest VSWR • Low Noise Figure Push-pull Cascode Circuit


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    CA2875R CA2875R 43dBm -32dB trw RF POWER TRANSISTOR trw rf transistor trw rf hybrid amp TRW amplifier PDF

    CA2850R

    Abstract: trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ
    Text: JL T R ü ELEK CMPNT/ R F DË| 0025054 GOOBTIO 4 | RF Devices Division TRW Electronic Components Group T CA2850R - " 7 * - 0 9 - 0 1 CA2850RThin Film RF Linear Hybrid Amplifier All Gold Monometallic) Metallization System Featuring Gold Transistor Die with Diffused Emitter


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    GOOHI10 CA2850R CA2850R 40dBm CA28S0R -32dB trw RF POWER TRANSISTOR ELECTRONIC BALLAST 236 trw rf transistor trw rf hybrid amp trw hybrid 100MHZ PDF

    trw hybrid

    Abstract: CA2885 TRW CA amplifier 66dBtyp RF push pull power amplifier TRW amplifier 00534
    Text: RF Devices Division TRW Electronic Components Group 9 9j 5 ? / CA2885 CA2885 Wide Bandwidth Linear Hybrid Amplifier • • • • • Power Output 2.00W 18.5dB Gain Instantaneous Bandwidth, 40-500MHz Low Noise Figure, 7dB Bragg Cell Application The CA2885 is a high-reiiability thin-film hybrid operation in 50 to 100 ohm systems. This


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    CA2885 CA2885 40-500MHz 50MH2 60MHz 500MHz 500MHz 43dBm 40-500MHZ trw hybrid TRW CA amplifier 66dBtyp RF push pull power amplifier TRW amplifier 00534 PDF

    CA2818

    Abstract: TRW CA2818 CA2418 00D30 Raychem cable 10614 TRW CA amplifier trw hybrid
    Text: T R Id E LEK CtIPNT/ R F flî D Ë | fiflESDEM 00D3aùt. 0 | ÊBBSBBBÈËShMMS M RF Devices Division TRW Electronic Components Group T-v^-o^-o i CA2818 CA2818 Wide Bandwidth Linear Hybrid Amplifier • • • • • Power Output, 800mW + 47dBm Third Order Intercept


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    00D300t> CA2818 CA2818 800mW 47dBm 1-200MHz T-7V-09-01 TRW CA2818 CA2418 00D30 Raychem cable 10614 TRW CA amplifier trw hybrid PDF

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


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    TRW mmic

    Abstract: No abstract text available
    Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for


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    TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic PDF

    CA2800

    Abstract: 709P trw hybrid
    Text: T R li E LEK C r iP N T / R F S'! » Ë J ûfiSSOSM 0D03Û70 ? | T ~ 7 y .Q 9 . p ; R F Devices Division T R W Electronic Components Group CA2800 Power Output, 800mW 17dB Gain 400mW PEP @ - 32dB IMD Instantaneous Bandwidth, 10-400MHz Low Noise Figure, 5dB


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    -09-p CA2800 800mW 400mW -32dB 10-400MHz CA2800 125REF- -32dB 709P trw hybrid PDF

    trw hybrid

    Abstract: LM313H TDC1141 TDC1141R3C TIDC1141 CRYSTAL trw 10h176 TRW LSI Products imf16
    Text: T0C1141 TRO w TDC1141 Monolithic Digital To Analog Converter 10 Bit, 50Msps, 12ns Settling Time The TDC1141 is an ECL compatible, 10-bit monolithic D/A converter capable of converting digital data into an analog current or voltage at data rates in excess of 50 Megasamples-per second Msps .


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    TDC1141 TDC1141 50Msps, 10-bit TDC1141. 1141R3C-1 trw hybrid LM313H TDC1141R3C TIDC1141 CRYSTAL trw 10h176 TRW LSI Products imf16 PDF