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Vishay Semiconductors TS8542VA EMITTER IR 850NM 1A DIE
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TS8542VA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TS8542VA		Vishay Semiconductor Opto Division	Optoelectronics - Infrared, UV, Visible Emitters - IR EMITTER SMD		Original	PDF

TS8542VA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm	Original	TS8542VA TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm	Original	TS8542VA TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm	Original	TS8542VA 2011/65/EU 2002/96/EC TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm	Original	TS8542VA 2002/95/EC 2002/96/EC TS8542VA 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm	Original	TS8542VA TS8542VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare	Original	VMN-SG2200-1502	PDF