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    TSA55565 Datasheets (1)

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    TSA55565 PTC Technology Power Transistor Chip, NPN Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: MICR OSE MI C0RP/P0ÜIER S7E D tllSTSG DGGDS3ti T • PTC TSA55565 JM T C T TECHNOLOGY Power TVansistor Chip, NPN 55 A, 650 V, tf = 0.1 fis 280 mil ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitler-Aluminum Collector Au or Ti/Ni/Ag


    OCR Scan     		TSA55565 PDF

    5609

    Abstract: 5609 transistor TSA55565
    Text: m M5E i> bllSISO 00G0552 S7M « P T C MICROSEMI CORP/POUER TSA55565 Power Transistor Chip, NPN 55 A, 650 V, tf = 0.1 jis • Planar Epitaxial ■ Coniaci Metallization: ■ Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils M Applications:


    OCR Scan     		00G0552 TSA55565 5609 5609 transistor TSA55565 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSA55565X Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325 V(BR)CBO (V)650 I(C) Max. (A)55 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		TSA55565X PDF