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Vishay Semiconductors TSAL6102UL IREMITTER HIGHPOWR 940NM 5MM 10D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSAL6102UL	Bulk	3,207		1	1 $0.65 10 $0.385 100 $0.65 1000 $0.18237 10000 $0.14954	Buy Now
Vishay Semiconductors TSAL6100UL IR EMITTER HIPOWER 950NM 5MM 10D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSAL6100UL	Bulk	1,729		1	1 $0.65 10 $0.385 100 $0.65 1000 $0.18237 10000 $0.14954	Buy Now
Lighthorse Technologies Inc CBG-SAF3GT-SALMGT-8IN COAX CBL SMA TO SMA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CBG-SAF3GT-SALMGT-8IN	Bulk	200		1	1 $17.05 10 $16.04 100 $13.64 1000 $11.36 10000 $11.36	Buy Now
Lighthorse Technologies Inc CBG-SAF3GT-SALRMGT-4IN COAX CBL RP-SMA TO SMA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CBG-SAF3GT-SALRMGT-4IN	Bulk	200		1	1 $16.59 10 $15.62 100 $13.27 1000 $11.06 10000 $11.06	Buy Now
Lighthorse Technologies Inc CBG-SALMGT-SALRMGT-8IN COAX CBL RP-SMA TO SMA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CBG-SALMGT-SALRMGT-8IN	Bulk	200		1	1 $20.61 10 $19.4 100 $16.49 1000 $13.74 10000 $13.74	Buy Now

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TSAL Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
TSAL0001	Microchip Technology	Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 8CH 24MHZ	Original	PDF
TSAL0002	Microchip Technology	Equipment - Specialty, Test and Measurement, LOGIC ANALYZER USB 16CH 100MHZ	Original	PDF
TSAL4400	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 3 mm (T-1) Package	Original	PDF
TSAL5100	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF
TSAL5300	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF
TSAL5300	Vishay Intertechnology	EMITTER, IR 950NMEMITTER, IR 950NM; Radiant intensity:45mW/Sr; Angle, half:22(degree); Case style:T - 13/4; Current, If Vf:100mA; Current, If max:200mA; Current, peak pulse:1.5mA; Current, reverse leakage max:10uA; Diameter,	Original	PDF
TSAL5300-FSZ	Vishay Siliconix	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs	Original	PDF
TSAL5300-GSZ	Vishay Siliconix	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs	Original	PDF
TSAL6100	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF
TSAL6200	Vishay	LED, INFRARED, GAAS, T-1 3/4 (TSAL6200)	Original	PDF
TSAL6200	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package	Original	PDF
TSAL6200	Vishay Telefunken	GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package	Original	PDF
TSAL6400	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF
TSAL7200	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF

TSAL7300	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in ph 5 mm (T-1.75) Package	Original	PDF
TSAL7300	Vishay Semiconductors	Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH POWR 950NM 5MM 2	Original	PDF
TSAL7300	Vishay Telefunken	GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 3-4) Package	Original	PDF
TSAL7400	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF
TSAL7600	Vishay Intertechnology	GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package	Original	PDF

TSAL Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm	Original	PDF	TSAL6400 2002/95/EC 2002/96/EC TSAL6400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
TSAL5100 Vishay Abstract: TSAL5100 Text: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs	Original	PDF	TSAL5100 TSAL5100 D-74025 20-May-99 TSAL5100 Vishay
Untitled Abstract: No abstract text available Text: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs	Original	PDF	TSAL7600 TSAL7600 D-74025 20-May-99
TSAL7200 Abstract: No abstract text available Text: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs	Original	PDF	TSAL7200 TSAL7200 D-74025 20-May-99
Untitled Abstract: No abstract text available Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm	Original	PDF	TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 11-Mar-11
TSAL6200 Abstract: No abstract text available Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity	Original	PDF	TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11
Untitled Abstract: No abstract text available Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power	Original	PDF	TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.	Original	PDF	TSAL7600 TSAL7600 18-Jul-08
TSAL7200 Abstract: No abstract text available Text: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity	Original	PDF	TSAL7200 2002/95/EC 2002/96/EC TSAL7200 18-Jul-08
TSAL6100 application Abstract: TSAL6100 GaAs 1000 nm Infrared Diode, Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity	Original	PDF	TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode,
TSAL6100 Abstract: TSAL6100 application Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.	Original	PDF	TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application
Untitled Abstract: No abstract text available Text: TSAL5300 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs	Original	PDF	TSAL5300 TSAL5300 D-74025 20-May-99
Untitled Abstract: No abstract text available Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power	Original	PDF	TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11
Untitled Abstract: No abstract text available Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.	Original	PDF	TSAL6400 TSAL6400 08-Apr-05

TSAL6200 Abstract: No abstract text available Text: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs	Original	PDF	TSAL6200 TSAL6200 D-74025 20-May-99
81008 Abstract: TSAL5300 Text: TSAL5300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs	Original	PDF	TSAL5300 TSAL5300 D-74025 20-May-99 81008
Untitled Abstract: No abstract text available Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power	Original	PDF	TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
TSAL7400 Abstract: high power infrared led Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power	Original	PDF	TSAL7400 2002/95/EC 2002/96/EC TSAL7400 18-Jul-08 high power infrared led
high power infrared led Abstract: TSAL7600 Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power	Original	PDF	TSAL7600 2002/95/EC 2002/96/EC TSAL7600 18-Jul-08 high power infrared led
TSAL6100 Abstract: high power infrared led Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power	Original	PDF	TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led
Untitled Abstract: No abstract text available Text: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol	OCR Scan	PDF	TSAL4400 TSAL4400 D-74025 04-Mar-98
08D diode Abstract: No abstract text available Text: TSAL7600 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm iJ -V A Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technol	OCR Scan	PDF	TSAL7600 TSAL7600 D-74025 ec-98 08D diode
diode chn 940 Abstract: chn 940 CT-98 Text: TSAL6200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6200 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs	OCR Scan	PDF	TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98
TSAL5100 Abstract: No abstract text available Text: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol	OCR Scan	PDF	TSAL5100 TSAL5100 D-74025 21-Sep-98

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Vishay Semiconductors TSAL6102UL

Vishay Semiconductors TSAL6100UL

Lighthorse Technologies Inc CBG-SAF3GT-SALMGT-8IN

Lighthorse Technologies Inc CBG-SAF3GT-SALRMGT-4IN

Lighthorse Technologies Inc CBG-SALMGT-SALRMGT-8IN

TSAL Datasheets (19)

TSAL Datasheets Context Search

Untitled

TSAL5100 Vishay

Untitled

TSAL7200

Untitled

TSAL6200

Untitled

Untitled

TSAL7200

TSAL6100 application

TSAL6100

Untitled

Untitled

Untitled

TSAL6200

81008

Untitled

TSAL7400

high power infrared led

TSAL6100

Untitled

08D diode

diode chn 940

TSAL5100