chn 4558 c
Abstract: temic 0675 d4 temic 0675 temic 0675 d6 chn 4558 TFK U 3212 M TFK 626 E 1024 TFK 839 str f 6456 diagram Tfk 821
Text: TSC 80251A1 TSC 80251A1 Extended 8–bit Microcontroller with Analog Interfaces Datasheet – 1996 TSC 80251A1 Table of Contents General Introduction Extended 8–bit Microcontroller with Analog Interfaces . . . . . . . . . . . . . . . . . 1. Section I: Introduction to TSC80251A1
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80251A1
TSC80251A1
chn 4558 c
temic 0675 d4
temic 0675
temic 0675 d6
chn 4558
TFK U 3212 M
TFK 626 E 1024
TFK 839
str f 6456 diagram
Tfk 821
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6N6 datasheet
Abstract: SE 110 AN-994 IRGBC30K-S IRGBC30M-S
Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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IRG4BC30K-SPbF
AN-994.
6N6 datasheet
SE 110
AN-994
IRGBC30K-S
IRGBC30M-S
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Untitled
Abstract: No abstract text available
Text: PD -95891 IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4BH20K-SPbF
EIA-418.
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AN-994
Abstract: No abstract text available
Text: PD -95891 IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4BH20K-SPbF
EIA-418.
AN-994
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tsc 429
Abstract: AN-994
Text: PD-95891A IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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PD-95891A
IRG4BH20K-SPbF
EIA-418.
tsc 429
AN-994
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AN-994
Abstract: IRGBC30K-S IRGBC30M-S
Text: PD - 95785A IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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5785A
IRG4BC30K-SPbF
AN-994.
AN-994
IRGBC30K-S
IRGBC30M-S
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-95891A IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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PD-95891A
IRG4BH20K-SPbF
EIA-418.
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AN-994
Abstract: high current igbt
Text: PD -95891 IRG4BH20K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4BH20K-SPbF
hi178)
EIA-418.
AN-994
high current igbt
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PDF
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AN-994
Abstract: IRGBC30K-S IRGBC30M-S
Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
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IRG4BC30K-SPbF
AN-994.
AN-994
IRGBC30K-S
IRGBC30M-S
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AN-994
Abstract: IRG4BC30K-S IRGBC30K-S IRGBC30M-S
Text: PD - 9.1619A PRELIMINARY IRG4BC30K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4BC30K-S
AN-994
IRG4BC30K-S
IRGBC30K-S
IRGBC30M-S
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AN-994
Abstract: IRG4BC20K-S IRGBC20K-S IRGBC20M-S
Text: PD - 9.1620 PRELIMINARY IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4BC20K-S
AN-994
IRG4BC20K-S
IRGBC20K-S
IRGBC20M-S
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Untitled
Abstract: No abstract text available
Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters
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IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
JESD47F)
O-220
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AN-994
Abstract: IRGBC20K-S IRGBC20M-S
Text: 95167 IRG4BC20K-SPbF Short Circuit Rated UltraFast IGBT Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter
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IRG4BC20K-SPbF
IRGBC20(
EIA-418.
AN-994
IRGBC20K-S
IRGBC20M-S
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AN-994
Abstract: IRGBC20K-S IRGBC20M-S
Text: 95167 IRG4BC20K-SPbF Short Circuit Rated UltraFast IGBT Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter
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IRG4BC20K-SPbF
IRGBC20
EIA-418.
AN-994
IRGBC20K-S
IRGBC20M-S
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transistor model h1a
Abstract: IRGS4045D irgs4045 JESD-47 lm 230 wf1 JESD47F
Text: IRGS4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C C E G VCE on typ. 1.7V G D2-Pak IRGS4045DPbF E n-channel Applications • Appliance Motor Drive Inverters
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IRGS4045DPbF
capabilityC-Q101-005
transistor model h1a
IRGS4045D
irgs4045
JESD-47
lm 230 wf1
JESD47F
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AN-994
Abstract: IRGBC30KD2-S IRGBC30MD2-S
Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching
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IRG4BC30KD-SPbF
EIA-418.
AN-994
IRGBC30KD2-S
IRGBC30MD2-S
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Untitled
Abstract: No abstract text available
Text: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C G E VCE(ON) typ. = 1.75V @ IC = 4.0A IRGR4607DPbF D-Pak n-channel
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IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
O-220AB
O-220
250uAâ
100uAâ
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Untitled
Abstract: No abstract text available
Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching
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-95674A
IRG4BC30KD-SPbF
IG957)
EIA-418.
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Untitled
Abstract: No abstract text available
Text: IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E G tSC 5µs, TJ max = 175°C C G G E VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel Applications
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IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
O-220AB
IRGR/S/B4607DPbF
JESD47F)
O-220
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IRGS4715D
Abstract: No abstract text available
Text: IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 8A G E • Industrial Motor Drive • UPS • Solar Inverters
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IRGB4715DPbF
IRGS4715DPbF
IRGB4715DPbFÂ
220ABÂ
IRGS4715DPbFÂ
JESD47F)
O-220
IRGS4715D
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AN-994
Abstract: IRGBC30KD2-S IRGBC30MD2-S
Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching
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IRG4BC30KD-SPbF
EIA-418.
AN-994
IRGBC30KD2-S
IRGBC30MD2-S
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PDF
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AN-994
Abstract: IRGBC30KD2-S IRGBC30MD2-S
Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching
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-95674A
IRG4BC30KD-SPbF
Minimized57)
EIA-418.
AN-994
IRGBC30KD2-S
IRGBC30MD2-S
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Untitled
Abstract: No abstract text available
Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive
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IRGS4620DPbF
IRGB4620DPbF
IRGP4620D
IRGP4620DPbF
O-247AC
O-220AC
IRGP4620D-EPbF
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives
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IRGS4630DPbF
IRGB4630DPbF
IRGP4630D
IRGP4630DPbF
O-247AC
IRGP4630D-EPbF
O-247AD
O-220AC
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