900v mosfet
Abstract: n-channel 900v 9a
Text: TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
|
Original
|
TSM9N90CN
TSM9N90CN
900v mosfet
n-channel 900v 9a
|
PDF
|
design of mosfet based power supply
Abstract: No abstract text available
Text: TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.9 @ VGS =10V ID (A) 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM7N90
O-220
ITO-220
TSM7N90
design of mosfet based power supply
|
PDF
|
DIODE HALF BRIDGE TO-220
Abstract: power mosfet 900v MOSFET TO-220
Text: TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM4N90
O-220
ITO-220
TSM4N90
DIODE HALF BRIDGE TO-220
power mosfet 900v
MOSFET TO-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.9 @ VGS =10V ID (A) 7 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM7N90
O-220
ITO-220
TSM7N90
|
PDF
|
n-channel 900v 9a
Abstract: TSM9N90CZ TSM9N90 power mosfet 900v
Text: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM9N90
O-220
ITO-220
TSM9N90
n-channel 900v 9a
TSM9N90CZ
power mosfet 900v
|
PDF
|
mur160
Abstract: No abstract text available
Text: MUR160 thru MUR190 Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Designed for use in switching power supplies, 'inverters and as free wheeling diodes - High efficiency, Low VF - Ultrafast recovery time for high efficiency
|
Original
|
MUR160
MUR190
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
AEC-Q101
D1405015
|
PDF
|
A12 diode
Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
|
Original
|
TSM3N90
O-220
ITO-220
O-251
O-252
TSM3N90
TSM3N90CH
TSM3N90CP
TSM3N90CZ
O-251
A12 diode
MOSFET 900V TO-220
MOSFET 50V 100A TO-220
power mosfet 900v
|
PDF
|
sot-363 n-channel mosfet
Abstract: GD 363 A2 N-Channel n-channel mosfet transistor TSM1412 SOT363 44
Text: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 34 @ VGS = 4.5V 3 38 @ VGS = 2.5V 3 44 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology
|
Original
|
TSM1412
OT-363
TSM1412CU6
sot-363 n-channel mosfet
GD 363
A2 N-Channel
n-channel mosfet transistor
TSM1412
SOT363 44
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LL4148/LL4448/LL914B Taiwan Semiconductor Small Signal Product CREAT BY ART High Speed SMD Switching Diode FEATURES - Fast switching device trr<4.0ns - Surface device type mounting - Matte Tin(Sn) terminal finish - Pb free version and RoHS compliant MECHANICAL DATA
|
Original
|
LL4148/LL4448/LL914B
270oC/10s
S1408022
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TS4B01G thru TS4B07G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength of 2000VRMS - Reliable low cost construction - UL Recognized File # E-326243
|
Original
|
TS4B01G
TS4B07G
2000VRMS
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1311042
|
PDF
|
TSM2314
Abstract: MOSFET N SOT-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA
Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
TSM2314
OT-23
TSM2314CX
TSM2314
MOSFET N SOT-23
n-channel mosfet transistor
Power MOSFET N-Channel sot-23
ultra low igss pA
|
PDF
|
TSM2314
Abstract: TSM2314CX Marking d12 sot23 d12 MARKING PA TR SOT-23 n-channel mosfet SOT-23
Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
TSM2314
OT-23
TSM2314CX
OT-23
TSM2314
Marking d12
sot23 d12
MARKING PA TR SOT-23
n-channel mosfet SOT-23
|
PDF
|
marking code 936b
Abstract: 927B marking
Text: 1SMB5926 thru 1SMB5956 Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Low inductance - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
1SMB5926
1SMB5956
J-STD-020
2011/65/EU
2002/96/EC
DO-214AA
AEC-Q101
JESD22-B10d
D1405067
marking code 936b
927B marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TS8P01G thru TS8P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
TS8P01G
TS8P07G
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312003
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TS6P01G thru TS6P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
TS6P01G
TS6P07G
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312002
|
PDF
|
n-channel mosfet SOT-23
Abstract: tsm2314
Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
TSM2314
OT-23
TSM2314CX
OT-23
n-channel mosfet SOT-23
tsm2314
|
PDF
|
Schottky
Abstract: No abstract text available
Text: MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
MBRS1045CT-Y
MBRS10150CT-Y
J-STD-020
2011/65/EU
2002/96/EC
O-263AB
JESD22-B102
D1407034
Schottky
|
PDF
|
10100CT
Abstract: No abstract text available
Text: MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
MBRS1035CT
MBRS10150CT
J-STD-020
2011/65/EU
2002/96/EC
O-263AB
AEC-Q101
D1309057
10100CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZD17C SERIES Taiwan Semiconductor CREAT BY ART Voltage Regulator Diodes FEATURES - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
BZD17C
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1406033
|
PDF
|
TS9015CX5
Abstract: SOT-25 rf
Text: TS9015 650mA CMOS LDO 0.9V Adjustable Voltage with Enable Function SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Adjustable 5. Output General Description The TS9015 is a positive voltage linear regulator operate from +2.5V to +7V input supply, it is developed utilizing
|
Original
|
TS9015
650mA
OT-25
TS9015
TS9015CX5
SOT-25 rf
|
PDF
|
6mbp75ra120 igbt
Abstract: ma 1050
Text: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection
|
Original
|
6MBP75RA120
6mbp75ra120 igbt
ma 1050
|
PDF
|
trr125
Abstract: No abstract text available
Text: 6MBP150RA120 1200V / 150A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
|
Original
|
6MBP150RA120
1000pation
trr125
|
PDF
|
TSM6N50
Abstract: No abstract text available
Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
|
Original
|
TSM6N50
ITO-220
O-252
O-251
TSM6N50
TSM6N50CI
TSM6N50CP
TSM6N50CH
|
PDF
|
8392L
Abstract: No abstract text available
Text: &TDK. TSC 78Q8392L Low Power Ethernet Coaxial Transceiver TDK SEMICONDUCTOR CORP. October 1996 FEATURES DESCRIPTION The TSC 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a
|
OCR Scan
|
78Q8392L
78Q8392L
MAU92L-28CH
78Q8392L-CP
78Q8392L-28CH
8392L
|
PDF
|
