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    Intel Silicon Photonics SPTSLP3SLCDFBLK

    TXRX OPTIC QSFP28 100G FR1 2KM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPTSLP3SLCDFBLK Bulk 10 1
    • 1 $675
    • 10 $675
    • 100 $675
    • 1000 $675
    • 10000 $675
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    Intel Silicon Photonics SPTSLP3SLCDF

    TXRX OPTIC QSFP28 100G FR1 2KM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPTSLP3SLCDF Box 1
    • 1 $843.75
    • 10 $843.75
    • 100 $843.75
    • 1000 $843.75
    • 10000 $843.75
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    Amphenol ProLabs SPTSLP3SLCDF-C

    Intel SPTSLP3SLCDF Compatible TA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPTSLP3SLCDF-C 1
    • 1 $3000
    • 10 $3000
    • 100 $2850
    • 1000 $3000
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    Siemens TSLP3

    BREAKER VL TRML SHD EXT 3P N/P | Siemens TSLP3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS TSLP3 Bulk 1
    • 1 $360.15
    • 10 $342.14
    • 100 $324.13
    • 1000 $324.13
    • 10000 $324.13
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    Onlinecomponents.com TSLP3
    • 1 $302.77
    • 10 $285.59
    • 100 $281.31
    • 1000 $281.31
    • 10000 $281.31
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    Siemens TSLP3M

    BREAKER VL SWBOARD MTG STRAP SHD PG ; TSLP3M | Siemens TSLP3M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS TSLP3M Bulk 2 Weeks 1
    • 1 $260.02
    • 10 $247.01
    • 100 $208.01
    • 1000 $208.01
    • 10000 $208.01
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    TSLP3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor

    Abstract: TRANSISTOR Outlines all transistor all transistor DATA RF TRANSISTOR TSLP3 all transistor data book all transistor data sheet all transistor datasheet TRANSISTOR APPLICATIONS
    Text: TSLP 3 outlines Thin Small Leadless Package with 3 contact pads bottom view Top view 1,0 ± 0,05 mm 1,0 ± 0,05 mm TSLP 3 0,15mm 0,20mm 0,6 ± 0,05 mm 0,15mm 0,05mm 0,25mm 0,40mm 0,25mm 0,05mm 0,05mm 0,05mm Side view TSLP3: TSLP3: Leadless Leadlesstransistor


    Original     		PDF

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


    Original     		PDF 2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY

    marking code INFINEON

    Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
    Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W


    Original     		PDF BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W

    BFR193L3

    Abstract: BFR340L3 marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 BFR193L3 BFR340L3 marking FA

    BCR133

    Abstract: BCR133F BCR133L3 SEMH11
    Text: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching


    Original     		PDF BCR133. /SEMH11 BCR133/F/L3 BCR133T/W BCR133S/U SEMH11 EHA07184 EHA07174 BCR133 BCR133F BCR133 BCR133F BCR133L3 SEMH11

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3

    3BR0665JF

    Abstract: 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
    Text: Evaluation boards for Automotive, Industrial and Multimarket Applications 2010 [ www.infineon.com/evalkits ] Contents Automotive 05 Motor control 11 Industrial control & automation 15 Power management 19 Lighting & LED 22 Consumer 25 Communication 30 Microcontroller


    Original     		PDF TC1797, TC1197 TC1797 XC866, XC886, XC888 XC800 XC164CM XE164 B192-H9214-G2-X-7600 3BR0665JF 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1

    marking Z1

    Abstract: BCR847BF
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03LRH marking Z1 BCR847BF

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860

    AN086

    Abstract: ESD5V3U4RRS SJ 76 TVS dIODE AN167 ESD24 ESD5V3U1U-02LRH BFP740 SJ 76 cLAMPING dIODE SODX SOT363 flash
    Text: ESD Protection Solutions Consumer and wireless communication [ www.infineon.com/tvsdiodes ] The ESD threat In today’s electronics, being faster, smaller and smarter creates profitability by enabling new and better applications. The race to pack even more high-speed functions in a smaller


    Original     		PDF 12f-1, B132-h9336-X-X-7600 AN086 ESD5V3U4RRS SJ 76 TVS dIODE AN167 ESD24 ESD5V3U1U-02LRH BFP740 SJ 76 cLAMPING dIODE SODX SOT363 flash

    A1296

    Abstract: VS902SL
    Text: VS902SL 注文コード No. NA1 29 6B 三洋半導体データシート 半導体データシート No.NA1296A をさしかえてください。 VS902SL 低容量 TVS ダイオード 汎用保護デバイス 用途 ・ USB2.0。 ・ 携帯通信用。 ・ STBMP3、DVD、DSC、LCD など。


    Original     		PDF VS902SL NA1296A 3/5/12V 8/20s IEC61000-4-2 IEC61000-4-5 TC-00001918 D0308 TC-00001770 A1296 VS902SL

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 EHA07536 Jul-01-2003 BFR360L3

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    Untitled

    Abstract: No abstract text available
    Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR840L3RHESD BFR840L3RHESD:

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    MARKING CODE R7 RF TRANSISTOR

    Abstract: No abstract text available
    Text: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 1 a wide range of wireless applications up to 10 GHz and more 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFR740L3 MARKING CODE R7 RF TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs


    Original     		PDF BCR191. BCR191/F/L3 BCR191T/W EHA07183 BCR191 BCR191F BCR191L3 BCR191T BCR191W OT323

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F

    BCR196

    Abstract: BCR196F BCR196L3 BCR196T BCR196W SC75 3C MARKING
    Text: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B


    Original     		PDF BCR196. BCR196/F/L3 BCR196T/W EHA07183 BCR196 BCR196F BCR196L3 BCR196T BCR196W OT323 BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75 3C MARKING

    BAV70S

    Abstract: BAV70 INFINEON BAV70U
    Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3


    Original     		PDF BAV70. BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U BAV70F* BAV70 INFINEON BAV70U

    Untitled

    Abstract: No abstract text available
    Text: BCR135./SEMH9 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR135. BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135L3

    MARKING W2S

    Abstract: No abstract text available
    Text: BCR189. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ BCR189F/L3 BCR189T C 3 R1 1 B 2 E EHA07180 Type Marking Pin Configuration Package BCR189F W2s 1=B 2=E 3=C


    Original     		PDF BCR189. BCR189F/L3 BCR189T EHA07180 BCR189F BCR189L3 BCR189F, BCR189L3, BCR189T, MARKING W2S

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3