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    TSM2302CX Search Results

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    TSM2302CX Price and Stock

    Taiwan Semiconductor TSM2302CX-RFG

    MOSFET N-CHANNEL 20V 3.9A SOT23
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    DigiKey TSM2302CX-RFG Cut Tape 20,009 1
    • 1 $0.54
    • 10 $0.362
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    • 1000 $0.17473
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    TSM2302CX-RFG Digi-Reel 20,009 1
    • 1 $0.54
    • 10 $0.362
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    • 1000 $0.17473
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    TSM2302CX-RFG Reel 18,000 3,000
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    MOSLEADER TSM2302CX-RFG-ML

    N-Channel 20V 3.9A SOT-23
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    DigiKey TSM2302CX-RFG-ML Reel 200
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    Taiwan Semiconductor TSM2302CX RFG

    Transistor MOSFET N-CH 20V 3.9A 3-Pin SOT-23 Plastic T/R - Tape and Reel (Alt: TSM2302CX RFG)
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    Avnet Americas TSM2302CX RFG Reel 54,000
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    Mouser Electronics TSM2302CX RFG
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    Newark TSM2302CX RFG Cut Tape 12,942 5
    • 1 $0.264
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    • 100 $0.264
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    TSM2302CX RFG Reel 3,000
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    TME TSM2302CX RFG 1,041 1
    • 1 $0.5
    • 10 $0.336
    • 100 $0.229
    • 1000 $0.162
    • 10000 $0.159
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    Chip Stock TSM2302CX RFG 181,807
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    EBV Elektronik TSM2302CX RFG 32 Weeks 3,000
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    TSM2302CX Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2302CX Taiwan Semiconductor 20V N-Channel Enhancement Mode MOSFET Original PDF
    TSM2302CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 20V 3.9A SOT23 Original PDF

    TSM2302CX Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    TSM2302CX

    Abstract: TSM2302CX RF TSM2302 n-channel mosfet SOT-23 marking 6A SOT 23 MOSFET N SOT-23 MOSFET SOT-23
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX TSM2302CX RF TSM2302 n-channel mosfet SOT-23 marking 6A SOT 23 MOSFET N SOT-23 MOSFET SOT-23

    TSM2302

    Abstract: TSM2302CX RF TSM2302CX ultra low igss pA mosfet
    Text: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2302 OT-23 TSM2302CX TSM2302 TSM2302CX RF ultra low igss pA mosfet

    TSM2302CX

    Abstract: TSM2302 tsm2302c
    Text: TSM2302 20V N-Channel Enhancement Mode MOSFET VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 3.6A = 65mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ Pin assignment: 1. Gate 2. Source 3. Drain Features Advanced trench process technology Excellent thermal and electrical capabilities


    Original     		PDF TSM2302 OT-23 TSM2302CX OT-23 300uS, TSM2302CX TSM2302 tsm2302c