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    TSM2314 Price and Stock

    Taiwan Semiconductor TSM2314CX-RFG

    MOSFET N-CHANNEL 20V 4.9A SOT23
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    DigiKey TSM2314CX-RFG Cut Tape 19,903 1
    • 1 $0.93
    • 10 $0.578
    • 100 $0.93
    • 1000 $0.26052
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    TSM2314CX-RFG Digi-Reel 19,903 1
    • 1 $0.93
    • 10 $0.578
    • 100 $0.93
    • 1000 $0.26052
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    TSM2314CX-RFG Reel 18,000 3,000
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    MOSLEADER TSM2314CX-RFG-ML

    N-Channel 20V 4.9A SOT-23
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    DigiKey TSM2314CX-RFG-ML Reel 200
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    Taiwan Semiconductor TSM2314CX RFG

    Transistor MOSFET N-CH 20V 4.9A 3-Pin SOT-23 Plastic T/R - Tape and Reel (Alt: TSM2314CX RFG)
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    Avnet Americas TSM2314CX RFG Reel 30 Weeks 45,000
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    Mouser Electronics TSM2314CX RFG
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    Newark TSM2314CX RFG Cut Tape 21,154 5
    • 1 $0.279
    • 10 $0.279
    • 100 $0.279
    • 1000 $0.279
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    TSM2314CX RFG Reel 3,000
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    TME TSM2314CX RFG 399 1
    • 1 $0.649
    • 10 $0.429
    • 100 $0.285
    • 1000 $0.258
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    EBV Elektronik TSM2314CX RFG 18 Weeks 3,000
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    TSM2314 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2314CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 20V 4.9A SOT23 Original PDF

    TSM2314 Datasheets Context Search

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    TSM2314

    Abstract: MOSFET N SOT-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA
    Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2314 OT-23 TSM2314CX TSM2314 MOSFET N SOT-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA PDF

    n-channel mosfet SOT-23

    Abstract: tsm2314
    Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2314 OT-23 TSM2314CX OT-23 n-channel mosfet SOT-23 tsm2314 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2314 OT-23 TSM2314CX PDF

    TSM2314

    Abstract: TSM2314CX Marking d12 sot23 d12 MARKING PA TR SOT-23 n-channel mosfet SOT-23
    Text: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2314 OT-23 TSM2314CX OT-23 TSM2314 Marking d12 sot23 d12 MARKING PA TR SOT-23 n-channel mosfet SOT-23 PDF