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    TSM2N7002E Search Results

    TSM2N7002E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2N7002E Taiwan Semiconductor 50v N-channel Enhancement Mode Mosfet Original PDF
    TSM2N7002ECU Taiwan Semiconductor 50V N-Channel Enhancement Mode MOSFET Original PDF
    TSM2N7002ECX Taiwan Semiconductor 50V N-Channel Enhancement Mode MOSFET Original PDF
    TSM2N7002ED Taiwan Semiconductor 50v Dual N-channel Enhancement Mode Mosfet Original PDF
    TSM2N7002EDCU6 Taiwan Semiconductor 50V Dual N-Channel Enhancement Mode MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage


    Original     		PDF TSM2N7002E OT-23 OT-323 TSM2N7002ECX TSM2N7002ECU 20rty

    TSM2N7002

    Abstract: TSM2N7002E TSM2N7002ECU TSM2N7002ECX
    Text: TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS on , Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Advanced trench process technology No minority carrier storage time


    Original     		PDF TSM2N7002E 250mA OT-363 TSM2N7002ECX OT-23 TSM2N7002ECU OT-323 OT-323 TSM2N7002 TSM2N7002E TSM2N7002ECU TSM2N7002ECX

    sot-363 n-channel mosfet

    Abstract: TSM2N7002ED TSM2N7002EDCU6
    Text: TSM2N7002ED 50V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 2 6. Drain (2) 2. Gate (2) 5. Gate (1) 3. Drain (1) 4. Source (1) VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Ordering Information


    Original     		PDF TSM2N7002ED 250mA TSM2N7002EDCU6 OT-363 OT-363 sot-363 n-channel mosfet TSM2N7002ED TSM2N7002EDCU6

    Untitled

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR TSM2N7002E 60V N-Channe! MOSFET b RoHS y CO M PLIANCE SOT-23 •à 1 2 SOT-323 «t PRODUCT SUM M ARY P in D e fin itio n : 1. Gate 2. Source 3. Drain V ds V) R oS (on)(Q ) lD (mA) 3 @ V CS= 1Û V 300 4 @ V<;s z 4.5V 200 60 Features


    OCR Scan     		PDF TSM2N7002E OT-23 OT-323 7002E T-323

    marking A07

    Abstract: TSM2N7002E TSM2N7002ECX
    Text: E TAIW AN TSM2N7002E S E M IC O N D U C T O R 60V N-Channel MOSFET pb RoHS CO M PLIANCE SO T-23 SOT-323 PRODUCT SUMMARY P in D e fin itio n : 1. Gate 2. Source 3. Drain é 1 2 1 V ds (V ) R oS (on)(Q ) lD (mA) 3 @ V CS= 1 Û V 300 4 @ V<;s z 4.5V 200 60


    OCR Scan     		PDF OT-23 OT-323 TSM2N7002E TSM2N7002ECX OT-23 7002ECU OT-323 marking A07 TSM2N7002E