Untitled
Abstract: No abstract text available
Text: TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram
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TSM35N03PQ56
TSM35N03PQ56
PDFN56
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PDF
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Untitled
Abstract: No abstract text available
Text: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 35A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Features High Density Cell Design for Ultra Low On-Resistance
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TSM35N03
TSM35N03CP
O-252
300uS,
O-252
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TSM35N03PQ56
Abstract: No abstract text available
Text: TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram
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TSM35N03PQ56
TSM35N03PQ56
PDFN56
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PDF
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Untitled
Abstract: No abstract text available
Text: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ID (A) 8.5 @ VGS = 10V 30 13 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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TSM35N03
O-252
TSM35N03CP
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SOT-252
Abstract: TO-252 MOSFET marking A07 "N-Channel MOSFET" 100V single n-channel n-channel mosfet transistor power 1A 25V MOSFET SOT-252 20v 18BSC TSM35N03
Text: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 8.5 @ VGS = 10V 30 13 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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TSM35N03
O-252
TSM35N03CP
SOT-252
TO-252 MOSFET
marking A07
"N-Channel MOSFET"
100V single n-channel
n-channel mosfet transistor
power 1A 25V MOSFET
SOT-252 20v
18BSC
TSM35N03
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PDF
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SOT-252
Abstract: TSM35N03CP 18BSC TSM35N03
Text: TSM35N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 13 @ VGS = 10V 30 8.5 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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Original
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TSM35N03
O-252
TSM35N03CP
SOT-252
18BSC
TSM35N03
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PDF
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TSM35N03
Abstract: TSM35N03CP 50a 30v 8.5m MOSFET
Text: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features High Density Cell Design for Ultra Low On-Resistance
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Original
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TSM35N03
TSM35N03CP
O-252
300uS,
O-252
TSM35N03
TSM35N03CP
50a 30v 8.5m MOSFET
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PDF
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