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    TSMC FUSE Search Results

    TSMC FUSE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation

    TSMC FUSE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSMC fuse

    Abstract: bridge rectifier rs 307 TSMC47A TA 618 710 TRANSFORMER EZ 711 253 TSMC36A BRIDGE-RECTIFIER 10v 1A 258 ez 902 TSMC10 TSMC11
    Text: 6ENL INSTR/ POWER T> 3flE • 3fl^0137 000471*} fl « f i l e T-//-Z3 ♦ • ♦ ♦ ♦ • P ♦R ♦E ♦L • I • M • l » I M » A * R * Y » * • ♦ ♦ ♦ TSMC SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 - 200 Volts FEATURES


    OCR Scan     		000471e} SMC/DO-214AB TSMC fuse bridge rectifier rs 307 TSMC47A TA 618 710 TRANSFORMER EZ 711 253 TSMC36A BRIDGE-RECTIFIER 10v 1A 258 ez 902 TSMC10 TSMC11 PDF

    TSMC fuse

    Abstract: TSMC 40nm TSMC 90nm sram 65nm sram TSMC 40nm layout issue TSMC 40nm SRAM 32nm tsmc tsmc 130nm metal process SONY GERMANIUM TRANSISTOR germanium power devices corporation
    Text: White Paper Leveraging the 40-nm Process Node to Deliver the World’s Most Advanced Custom Logic Devices Introduction Altera’s launch of the Stratix IV and HardCopy® IV device families in the second quarter of 2008 marked the introduction of the world’s first 40-nm FPGAs and the industry’s only risk-free path to 40-nm ASICs. For Altera, the


    Original     		40-nm TSMC fuse TSMC 40nm TSMC 90nm sram 65nm sram TSMC 40nm layout issue TSMC 40nm SRAM 32nm tsmc tsmc 130nm metal process SONY GERMANIUM TRANSISTOR germanium power devices corporation PDF

    Broadcom product roadmap

    Abstract: 65-nm 65nm sources tsmc 130nm metal process 2015 static ram BROADCOM "heat sink" Qualcomm "power management" 2010 WP-01002-1 65nm
    Text: White Paper Altera’s Strategy for Delivering the Benefits of the 65-nm Semiconductor Process Introduction Altera's strategy for delivering the benefits of the 65-nm semiconductor manufacturing process focuses on leveraging advanced technologies and methods to provide the most capable and highest performance devices at the lowest cost,


    Original     		65-nm 65-nm Broadcom product roadmap 65nm sources tsmc 130nm metal process 2015 static ram BROADCOM "heat sink" Qualcomm "power management" 2010 WP-01002-1 65nm PDF

    M1T1HT25FL64

    Abstract: No abstract text available
    Text: High Speed Flow-through 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL64 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		16Kx64) M1T1HT25FL64 64-Bit CL025G M1T1HT25FL64 PDF

    TSMC 0.25Um

    Abstract: M1T2HT25FL32 2mbit TSMC CL025G
    Text: High Speed Flow-through 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT25FL32 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		64Kx32) M1T2HT25FL32 32-Bit CL025G M1T2HT25FL32 TSMC 0.25Um 2mbit TSMC CL025G PDF

    TSMC 0.25Um

    Abstract: CL025G M1T2HT25FL64
    Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT25FL64 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		32Kx64) M1T2HT25FL64 64-Bit CL025G M1T2HT25FL64 TSMC 0.25Um PDF

    TSMC 0.25Um

    Abstract: MOSYS M1T1HT25PZ32 M1T1HT25PZ64
    Text: High Speed Pipelined 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT25PZ64 • High Speed 1T-SRAM Standard Macro • 166 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 64-Bit wide data buses


    Original     		16Kx64) M1T1HT25PZ64 64-Bit CL025G M1T1HT25PZ64 TSMC 0.25Um MOSYS M1T1HT25PZ32 PDF

    M1T1HT25PZ32

    Abstract: M1T2HT25PZ32 sram embedded
    Text: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT25PZ32 • High Speed 1T-SRAM Standard Macro • 166 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses


    Original     		64Kx32) M1T2HT25PZ32 32-Bit CL025G M1T2HT25PZ32 M1T1HT25PZ32 sram embedded PDF

    M1T1HT25FL32

    Abstract: CL025G
    Text: High Speed Flow-through 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT25FL32 • High Speed 1T-SRAM Standard Macro • 83 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		32Kx32) M1T1HT25FL32 32-Bit CL025G M1T1HT25FL32 PDF

    TSMC 0.25Um

    Abstract: M1T1HT25PZ32 32Kx32 Synchronous
    Text: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT25PZ32 • High Speed 1T-SRAM Standard Macro • 166 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses


    Original     		32Kx32) M1T1HT25PZ32 32-Bit CL025G M1T1HT25PZ32 TSMC 0.25Um 32Kx32 Synchronous PDF

    TSMC 0.25Um

    Abstract: M1T2HT25PZ64 CL025G TSMC CL025G
    Text: High Speed Pipelined 1-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT25PZ64 • High Speed 1T-SRAM Standard Macro • 166 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 64-Bit wide data buses


    Original     		32Kx64) M1T2HT25PZ64 64-Bit CL025G M1T2HT25PZ64 TSMC 0.25Um TSMC CL025G PDF

    CL018G

    Abstract: M1T1HT18FL64E MoSys MoSys sram embedded
    Text: High Speed Flow-through 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		16Kx64) M1T1HT18FL64E 64-Bit CL018G M1T1HT18FL64E MoSys MoSys sram embedded PDF

    CL018G

    Abstract: M1T2HT18FL32E "1t-sram"
    Text: High Speed Flow-through 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL32E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		64Kx32) M1T2HT18FL32E 32-Bit CL018G M1T2HT18FL32E 2300um 32Kx64 "1t-sram" PDF

    CL018G

    Abstract: M1T2HT18PE64E TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters
    Text: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PE64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 64-Bit wide data buses


    Original     		32Kx64) M1T2HT18PE64E 64-Bit CL018G M1T2HT18PE64E 3200um TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters PDF

    CL018G

    Abstract: M1T1HT18PL64E 16Kx64 M1T1HT18PL32E fast sram 100mhz mosys sram embedded
    Text: High Speed Pipelined 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PL64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		16Kx64) M1T1HT18PL64E 64-Bit CL018G M1T1HT18PL64E 16Kx64 2200um 16Kx64 M1T1HT18PL32E fast sram 100mhz mosys sram embedded PDF

    CL018G

    Abstract: M1T1HT18PE64E Signal Technology 16Kx64
    Text: High Speed Pipelined 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PE64E • High Speed 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 64-Bit wide data buses


    Original     		16Kx64) M1T1HT18PE64E 64-Bit CL018G M1T1HT18PE64E Signal Technology 16Kx64 PDF

    CL018G

    Abstract: 64Kx32 M1T2HT18PE32E TSMC 0.18um 1T-sram tsmc sram "1t-sram"
    Text: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PE32E • High Speed 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 32-Bit wide data buses


    Original     		64Kx32) M1T2HT18PE32E 32-Bit CL018G M1T2HT18PE32E 3200um 2300um 64Kx32 64Kx32 TSMC 0.18um 1T-sram tsmc sram "1t-sram" PDF

    CL018G

    Abstract: M1T2HT18PL64E mosys sram embedded sram embedded
    Text: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PL64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		32Kx64) M1T2HT18PL64E 64-Bit CL018G M1T2HT18PL64E 3200um 2300um 32Kx64 mosys sram embedded sram embedded PDF

    CL018G

    Abstract: M1T1HT18PE32E Signal Technology fast sram 100mhz
    Text: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PE32E • High Speed 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Early write mode timing • 32-Bit wide data buses


    Original     		32Kx32) M1T1HT18PE32E 32-Bit CL018G M1T1HT18PE32E Signal Technology fast sram 100mhz PDF

    CL018G

    Abstract: M1T2HT18PL32E TSMC 0.18um SRAM
    Text: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PL32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late write mode timing • 32-Bit wide data buses


    Original     		64Kx32) M1T2HT18PL32E 32-Bit CL018G M1T2HT18PL32E 3200um TSMC 0.18um SRAM PDF

    CL018G

    Abstract: tsmc sram TSMC 0.18um SRAM TSMC 0.18um Process parameters M1T1HT18PL64E M1T1HT18PZ64E MoSys sram embedded MoSys 1T sram tsmc 0.18um
    Text: High Speed Pipelined 1-Mbit 16Kx64 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PZ64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 64-Bit wide data buses


    Original     		16Kx64) M1T1HT18PZ64E 64-Bit CL018G M1T1HT18PZ64E 16Kx64 2200um tsmc sram TSMC 0.18um SRAM TSMC 0.18um Process parameters M1T1HT18PL64E MoSys sram embedded MoSys 1T sram tsmc 0.18um PDF

    CL018G

    Abstract: M1T2HT18PL32E M1T2HT18PZ32E TSMC 0.18um
    Text: High Speed Pipelined 2-Mbit 64Kx32 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PZ32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses


    Original     		64Kx32) M1T2HT18PZ32E 32-Bit CL018G M1T2HT18PZ32E M1T2HT18PL32E TSMC 0.18um PDF

    tsmc 0.18um

    Abstract: SRAM timing CL018G M1T2HT18PL64E M1T2HT18PZ64E MoSys 1T sram mosys sram embedded
    Text: High Speed Pipelined 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18PZ64E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 64-Bit wide data buses


    Original     		32Kx64) M1T2HT18PZ64E 64-Bit CL018G M1T2HT18PZ64E 2300um 32Kx64 tsmc 0.18um SRAM timing M1T2HT18PL64E MoSys 1T sram mosys sram embedded PDF

    TSMC 0.18um

    Abstract: CL018G M1T1HT18PL32E M1T1HT18PZ32E
    Text: High Speed Pipelined 1-Mbit 32Kx32 Standard 1T-SRAM Embedded Memory Macro M1T1HT18PZ32E • High Performance 1T-SRAM Standard Macro • 200 MHz operation • 1-Clock cycle time • Pipelined read access timing • Late-late write mode timing • 32-Bit wide data buses


    Original     		32Kx32) M1T1HT18PZ32E 32-Bit CL018G M1T1HT18PZ32E 32Kx32 2200um TSMC 0.18um M1T1HT18PL32E PDF