MT28F008B3
Abstract: MT28F800B3
Text: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
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MT28F008B3
MT28F800B3
40-Pin
48-Pin
16KB/8K-word
100ns
MT28F800B3)
8/512K
44-Pin
MT28F008B3
MT28F800B3
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MT28F002B3
Abstract: MT28F200B3
Text: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks
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MT28F002B3
MT28F200B3
40-Pin
48-Pin
16KB/8K-word
100ns
MT28F200B3,
16/256K
MT28F002B3
MT28F200B3
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TSAL62
Abstract: P1230
Text: Temic TSOP12.TB1 S e m i c o n d u c t o r s Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type fa . Type. T SO P1230TB 1 30 kHz TSOP1233TB1 .fa. 33 kHz TSO P1236TB1 36 kHz TSOP1237TB1 3 6.7 kHz TSOP 123 8TB 1
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TSOP12.
P1230TB
P1236TB1
1256TB
TSOP1233TB1
TSOP1237TB1
1240TB1
D-74025
15-May-97
TSAL62
P1230
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
CY14B108L)
CY14B108N)
44-/54-pin
48-ball
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27934
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
27934
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Untitled
Abstract: No abstract text available
Text: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM 4-Mbit (512 K × 8/256 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B104LA,
CY14B104NA
CY14B104LA)
CY14B104NA)
44-/54-pin
48-ball
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Untitled
Abstract: No abstract text available
Text: HM66205 S e rie s-524,288-Word x 8-Bit High Density CM O S Static RAM Module • PIN ARRANGEMENT Description The HM66205 is a high density 4M-bit static RAM module consisting of 4 pieces HM628128LTS products TSOP type 1M static RAM and a HD74ACT138FP equivalent product (SOP
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HM66205
s------------524
288-Word
HM628128LTS
HD74ACT138FP
HM6620S
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MX23C1610
Abstract: MX23C1610MC-10 MX23C1610MC-12 MX23C1610MC-15 MX23C1610PC-10 MX23C1610RC-10 MX23C1610RC-12 MX23C1610RC-15 MX23C1610TC-10 MX23C1610TC-12
Text: MX23C1610 5 Volt 16-Mbit 2M x 8 / 1M x 16 Mask ROM FEATURES ORDER INFORMATION PIN CONFIGURATION 48 TSOP (Normal Type) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 MX23C1610 (Normal Type) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32
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MX23C1610
16-Mbit
MX23C1610MC-10
MX23C1610MC-12
MX23C1610MC-15
MX23C1610TC-10
MX23C1610TC-12
MX23C1610TC-15
MX23C1610RC-10
MX23C1610RC-12
MX23C1610
MX23C1610MC-10
MX23C1610MC-12
MX23C1610MC-15
MX23C1610PC-10
MX23C1610RC-10
MX23C1610RC-12
MX23C1610RC-15
MX23C1610TC-10
MX23C1610TC-12
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HBT 01 - 01G
Abstract: DG20
Text: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]
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MSC23T/PV2720A-XXBS9
152-Word
72-Bit
MSC23T/DV2720A-xxBS9
16-Mb
168-pin
72-bit
HBT 01 - 01G
DG20
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KM48C2000B
Abstract: KM48C2100B KM48V2000B KM48V2100B V2000B V2100B
Text: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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KM48C2000B,
KM48C2100B
KM48V2000B,
KM48V2100B
KM48C2000B
KM48C2100B
KM48V2000B
KM48V2100B
V2000B
V2100B
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IS61C1024
Abstract: No abstract text available
Text: I S 6 1 C 1 I S 6 1 C 1 2 2 4 4 ISSI L 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 m W typical • Low standby power: 500 fiW (typical) C M O S standby The IS S IIS61C1024 and IS61C1024L are very high-speed,
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IIS61C1024
IS61C1024L
072-word
IS61C1024L-12JRI
IS61C1024L-12NRI
IS61C1024L-12KRI
IS61C1024L-12TRI
300-mil
400-mil
IS61C1024
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Untitled
Abstract: No abstract text available
Text: ISSI IS 6 2 L V 1 2 8 1 6 L / L L PRELIMINARY INFORMATION OCTOBER 1999 128K x 16 CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70,100 ns The IS S IIS62LV12816L and IS62LV12816LL are high speed, 2,097,152-bit static RAMs organized as 131,072
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IIS62LV12816L
IS62LV12816LL
152-bit
IS62LV12816LL-55T
IS62LV12816LL-55B
IS62LV12816LL-55TI
IS62LV12816LL-55BI
IS62LV12816LL-70T
IS62LV12816LL-70B
IS62LV12816LL-70TI
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Untitled
Abstract: No abstract text available
Text: ISST IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM a d v a n c e in fo rm a tio n FEATURES DESCRIPTION • High-speed access times: 8, 10,12 and 15 ns The IS S IIS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568
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IS61LV2568
IIS61LV2568
144-word
IS61LV2568-10K
IS61LV2568-10T
400-mil
IS61LV2568-10KI
IS61LV2568-10TI
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Untitled
Abstract: No abstract text available
Text: IS63LV1024 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT issr j u l y 1999 FEATURES DESCRIPTION • High-speed access times: 10,12 and 15 ns The IS S IIS63LV1024 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary
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IS63LV1024
IIS63LV1024
072-word
IS63LV1024
r400-mil
IS63LV1024-15T
IS63LV1024-15H
IS63LV1024-15J
IS63LV1024-15K
IS63LV1024-12TI
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Untitled
Abstract: No abstract text available
Text: IS 6 1 L V 5 1 2 8 issr 512K x 8 HIGH-SPEED CMOS STATIC RAM ADVAN^'" R “AT'°N JU LY 1999 FEATURES DESCRIPTION • High-speed access times: 1 0 ,1 2 and 15 ns The IS S IIS61LV5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61LV5128
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IIS61LV5128
288-word
IS61LV5128
IS61LV5128-10K
IS61LV5128-10T
400-mil
IS61LV5128-12K
IS61LV5128-12T
IS61LV5128-12KI
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Untitled
Abstract: No abstract text available
Text: ISSI IS6 1 C12816 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S IIS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated
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C12816
IIS61C12816
152-bit
PK13197K
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Untitled
Abstract: No abstract text available
Text: IS 6 1 L V 2 5 6 1 6 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY ADVAN^ ° ATI0N FEATURES DESCRIPTION • High-speed access time: 10, 12, and 15 ns • CMOS low power operation The IS S IIS61LV25616 is a high-speed, 4,194,304-bit static
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IIS61LV25616
304-bit
IS61LV25616-12T
400-mil
IS61LV25616-12K
IS61LV25616-12LQ
IS61LV25616-12TI
IS61LV25616-12KI
IS61LV25616-12LQI
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29LV104B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV104B
32-Pin
29LV104B-90
29LV104B-120
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Untitled
Abstract: No abstract text available
Text: ISSI I S 2 7 L V 5 1 2 65,536 X 8 LOW VOLTAGE CMOS EPROM FEATURES DESCRIPTION • Single 3.3V power supply The IS S IIS27LV512 is a low voltage, low power, high-speed 512K-bit CMOS 64K-word by 8-bit Ultraviolet Erasable CMOS Programmable Read-Only Memory. It utilizes the standard
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IIS27LV512
512K-bit
64K-word
IS27C512
IS27LV512
IS27LV512-90WI
IS27LV512-90PLI
IS27LV512-90CWI
IS27LV512-90TI
600-mil
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29LV020B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV020B
32-Pin
29LV020B-55
29LV020B-70
29LV020B-90
29LV020B-120
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS4LC4M 4S0 II 3.3V 4 M x 4 C M O S synchronous DRAM Features • • • • • • • • Organization: 2 ,0 9 7 ,1 5 2 words X 4 bits X 2 banks All signals referenced to positive edge of clock Dual internal banks controlled by BA
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM
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512MB,
184pin
512Mb
200mil
72-bit
M383L6523BTS-
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54-PIN
Abstract: uPD4416016G5-A15-9JF-A
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The μPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416016 is packaged in a 54-pin plastic TSOP (II).
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF-A
PD4416016G5-A15-9JF
uPD4416016G5-A15-9JF-A
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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