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    TSUS4300 Price and Stock

    Vishay Semiconductors TSUS4300

    EMITTER IR 950NM 100MA RADIAL
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    Vishay Semiconductors TSUS4300-ASZ

    EMITTER IR 950NM STD 3MM
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    Vishay Intertechnologies TEFD4300F

    Photodiodes T-1 770 to 1070nm +/-20 deg
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    Mouser Electronics TEFD4300F 10,147
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    TTI TEFD4300F Reel 10,000 5,000
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    Vishay Intertechnologies TEFD4300

    Photodiodes T-1 350 to 1120nm +/-20 deg
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    Mouser Electronics TEFD4300 6,638
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    Vishay Intertechnologies TSUS4300

    Ir Emitter, 950Nm, T-1, Through Hole; Viewing Angle:16°; Diode Case Style:T-1 (3Mm); Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.3V; Rise Time:800Ns; Fall Time Tf:800Ns; Operating Temperature Min:-40°C; Product Range:- Rohs Compliant: Yes |Vishay TSUS4300
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    Newark TSUS4300 Bulk 5,000
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    TSUS4300 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSUS4300 Temic Semiconductors GaAs Infrared Emitting Diode in diam 3 mm (T-1) Package Original PDF
    TSUS4300 Vishay Intertechnology IR EMITTER, 3MM 950NMIR EMITTER, 3MM 950NM; Radiant intensity:35mW/Sr; Angle, half:16(degree); Time, t on:0.8us; Time, t off:0.8us; Current, If av:100mA; Case style:Radial; Current, forward If:100mA; LED / lamp size:3mm/T1; Pitch, Original PDF
    TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in Deg 3 mm (T-1) Package Original PDF
    TSUS4300-ASZ Vishay Semiconductors EMITTER IR 950NM STD 3MM Original PDF

    TSUS4300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°


    Original     		PDF TSUS4300 TEFT4300 TSUS4300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSUS4300

    Abstract: No abstract text available
    Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05

    TSUS4300

    Abstract: TEFT4300
    Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°


    Original     		PDF TSUS4300 TEFT4300 2002/95/EC 2002/96/EC TSUS4300 11-Mar-11 TEFT4300

    TSUS4300

    Abstract: No abstract text available
    Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    TSUS4300

    Abstract: TEFT4300 temic infrared 7979E
    Text: TSUS4300 GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 D-74025 15-Jul-96 TEFT4300 temic infrared 7979E

    TSUS4300

    Abstract: TEFT4300
    Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°


    Original     		PDF TSUS4300 TEFT4300 2002/95/EC 2002/96/EC TSUS4300 18-Jul-08 TEFT4300

    TSUS4300

    Abstract: No abstract text available
    Text: TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8636-1 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 950 nm High reliability


    Original     		PDF TSUS4300 TEFT4300 2002795/EC 2002/96/EC TSUS4300 11-Mar-11

    TSUS4300

    Abstract: No abstract text available
    Text: TSUS4300 Vishay Telefunken GaAs Infrared Emitting Diode in ø 3 mm T–1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant


    Original     		PDF TSUS4300 TSUS4300 D-74025 08-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8636-1 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 950 nm High reliability


    Original     		PDF TSUS4300 TEFT4300 2002795/EC 2002/96/EC TSUS4300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in ∅ 3 mm T-1 Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant


    Original     		PDF TSUS4300 TSUS4300 D-74025 06-May-04

    k 7947 e

    Abstract: TSUS4300
    Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.


    Original     		PDF TSUS4300 TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05 k 7947 e

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8636-1 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 950 nm High reliability


    Original     		PDF TSUS4300 TEFT4300 2002795/EC 2002/96/EC TSUS4300 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TEFD4300

    Abstract: APPLICATION CIRCUIT OF TSAL4400
    Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times


    Original     		PDF TEFD4300 VSLB3940, TSUS4300, TSAL4400 2002/95/EC 2002/96/EC TEFD4300 2011/65/EU 2002/95/EC. APPLICATION CIRCUIT OF TSAL4400

    Untitled

    Abstract: No abstract text available
    Text: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 2002/95/EC. 2011/65/EU. JS709A

    TEFT4300

    Abstract: 8239 Silicon NPN Phototransistor TSAL4400 TSUS4300 npn phototransistor 86-36-2
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 18-Jul-08 8239 Silicon NPN Phototransistor TSAL4400 npn phototransistor 86-36-2

    Untitled

    Abstract: No abstract text available
    Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times


    Original     		PDF TEFD4300 VSLB3940, TSUS4300, TSAL4400 TEFD4300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    tfm 5380

    Abstract: TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400
    Text: TFMx IR Detector Photomodules TELEFUNKEN Semiconductors 06.96 Table of Contents General Information. 1 Introduction . 1


    Original     		PDF D-74025 15-Jul-96 tfm 5380 TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400

    TEFT4300

    Abstract: TSUS4300 950nm
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 900nm) TSUS4300 D-74025 20-May-99 950nm

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TSUS4300 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in 0 3 mm T -l Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without


    OCR Scan     		PDF TSUS4300 TSUS4300 D-74025 15-M-96

    7447 IC

    Abstract: IC 7447 A ic 7447 TELEFUNKEN EM IC 7447 photo
    Text: T em ic TSUS4300 Semiconductors GaAs Infrared Emitting Diode in 0 3 mm T-l Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without


    OCR Scan     		PDF TSUS4300 TSUS4300 15-Jul-96 7447 IC IC 7447 A ic 7447 TELEFUNKEN EM IC 7447 photo