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    TVP8 Search Results

    SF Impression Pixel

    TVP8 Price and Stock

    Amphenol Aerospace TVP80RW-25-20P

    38999 PANEL WALL MT RECP 10#20 13#16,3#8 TWIN,4#12 COAX
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    Interstate Connecting Components TVP80RW-25-20P
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    Amphenol Aerospace TVP80RW-11-2S

    38999 PANEL WALL MT RECP 2#16 SKT
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    Interstate Connecting Components TVP80RW-11-2S
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    Amphenol Aerospace TVP80RW-25-19P

    38999 PANEL WALL MT RECP 19#12 PIN
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    Amphenol Aerospace TVP80RW-25-91S

    38999 PANEL WALL MT RECP 2#8 TWINAX SKT
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    Interstate Connecting Components TVP80RW-25-91S
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    Amphenol Aerospace TVP80RW-25-19PB

    38999 S3 PANEL WALL MT RECP 19#12 PIN
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    Interstate Connecting Components TVP80RW-25-19PB
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    TVP8 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TVP8 General Instrument Semiconductors and Electronic Components 1971 Scan PDF
    TVP8200B Motorola NPN Silicon RF Power Transistor Original PDF

    TVP8 Datasheets Context Search

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    LG color tv Circuit Diagram schematics

    Abstract: fs401lf samsung svv FS401 FS403 1280x480 three phase SCR gate drive circuit microcontroller base scr phase angle control LG color tv Circuit of vertical section Diagram schematics FS403LF
    Text: FS401, FS403 PC to TV Video Scan Converters Features †Note: Covered under US Patent # 5,862,268, # 5,905,536, # 5,966,184 and/or patents pending. • • • • • • Frame rate Conversion † Programmable 2D scaling † Pan and Zoom † Advanced 2-D flicker filter †


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    PDF FS401, FS403 150Hz 100Hz LG color tv Circuit Diagram schematics fs401lf samsung svv FS401 1280x480 three phase SCR gate drive circuit microcontroller base scr phase angle control LG color tv Circuit of vertical section Diagram schematics FS403LF

    diode E1110

    Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
    Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t


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    Untitled

    Abstract: No abstract text available
    Text: Tem ic SMD10P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary ««PWBW<V> tffiQm Q l in* (A) -6 0 0.28 -1 0 S Q DPAK (TO-252) D ETO G S T o p V iew P -C h a n n e l M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


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    PDF SMD10P06 O-252) 10ODC

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    EQUIVALENT FOR J175

    Abstract: 176 siliconix "P-Channel JFETs" Siliconix P-Channel JFETs P-Channel JFETs J177. P-CHANNEL. TO-92 equivalent SST174
    Text: J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number VGS oH (V) rDS(on) Max (Q) •iHoff) Typ (pA) J/SST174 5 to 10 85 -1 0 25 J/SST175 3 to 6 125 -1 0 25 J/SST176 1 to 4


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    PDF J/SST174/175/176/177 SST174 SST175 SST176 SST177 J/SST174 J/SST175 J/SST176 J/SST177 S-04030-- EQUIVALENT FOR J175 176 siliconix "P-Channel JFETs" Siliconix P-Channel JFETs P-Channel JFETs J177. P-CHANNEL. TO-92 equivalent

    HLP50RG

    Abstract: HLP60RG HLP60RGC
    Text: HITACHI/ OPTOELECTRONICS 1ÖE D • 4 4 cib505 Q G I G Ô T Ô H LP50RG, H LP60RG Description S ■ GaAIAs I RED a HLPSORG and H LP60RG are GaAIAs infrared emitting diodes with single heterojunction structure. They offer a wide range o f wavelength and out­


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    PDF ib505 LP50RG, LP60RG LP60RG HLP50RG, HLP60RG tvp800 HLP50RG HLP50RG HLP60RGC

    Untitled

    Abstract: No abstract text available
    Text: T em ic Dual P-Channel Enhancement-Mode MOSFET Product Summary -2 0 n w w tf t Q i I B A, 0.25 @ VGS = - 1 0 V ±2.3 0.40 @ VGS = -4 .5 V ±1.5 Lower profile/smaller size— see L IT E F O O T equivalent: SÌ6953DQ


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    PDF 6953DQ P-38796-- 9953DY

    2SK1845

    Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
    Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.


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    PDF ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17