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    TYPE OF SRAM Search Results

    TYPE OF SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-059FTYPEMM-050 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-050 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 50 ft Datasheet
    CO-059FTYPEMM-006 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-006 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 6 ft Datasheet
    CO-059FTYPEMM-010 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-010 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 10 ft Datasheet
    CO-059FTYPEMM-025 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-025 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 25 ft Datasheet
    CO-059FTYPEMM-003 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-003 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 3 ft Datasheet

    TYPE OF SRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DATA SHEET OF IC 317

    Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
    Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,


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    simm 72 pinout

    Abstract: No abstract text available
    Text: Product Line of Memory Products Paradigm Asynchronous SRAM Organization Device Type Voltage Pin Count Acess Time ns Packages Available Comments 256K PDM41256 PDM31256 PDM41257 5V 3.3V 5V 8,10,12,15 8,10,12,15,20 10, 12, 15, 20 28 28 24 SO, T (Type I) SO, T (Type I)


    OCR Scan     		32Kx8 256Kx1 PDM41256 PDM31256 PDM41257 64Kx16 128Kx8 256Kx4 simm 72 pinout PDF

    S71AL016D02BAWTF0#

    Abstract: 2683 S99-50
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA January 04, 2008 Obsolescence Notification No: Subject: 2683 Obsolescence of the SRAM Type 4, 2M SRAM Multi-Chip Packages MCPs products listed below Spansion LLC is announcing the obsolescence SRAM type 4, 2M SRAM, and all valid combinations of


    Original     		S71AL016D02BAWTF0 S71AL016D02BAWTF0# S71AL016D02BAWTF0F S71AL016D02BFWTF0F S71AL016D02BFWTF0 S99-50082 TLC056 TLF048 2683 S99-50 PDF

    pentium II

    Abstract: No abstract text available
    Text: Product Change Notification PROCESS / PRODUCT CHANGE NOTIFICATION Change Notification #: 608 Change Title: Addition of Toshiba as SRAM Supplier for Pentium II Processors Date of PCN Publication: August 3, 1998 Type of Change Notification: Addendum to Previous FYI Notification


    Original     		PDF

    SM53A

    Abstract: S71PL032J04 S71PL032J04BAI0B S71PL032J04BAW0B S71PL032J04BFI0B S71PL032J04BFW0B TSC056
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 9, 2005 Advanced Change Notification No: Subject: 2560 Obsolescence of S71PL032J04 using SRAM Type 2 Spansion LLC is announcing the obsolescence of the S71PL032J04BAW0B due to the obsolescence of


    Original     		S71PL032J04 S71PL032J04BAW0B S71PL032J04BAW0B, S71PL032J04BFW0B, S71PL032J04BAI0B, S71PL032J04BFI0B SM53A30 SM53AP5 TSC056 S71PL032J04BAW0B0 SM53A S71PL032J04BAI0B S71PL032J04BFI0B S71PL032J04BFW0B TSC056 PDF

    CBV2

    Abstract: HN27C301
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


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    77106

    Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


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    4-sr-1m

    Abstract: No abstract text available
    Text: AMI S FIA IVI A S I S D IV IS IO N 1. APPLICATION This data sheet applies to the conforming product specifications of the 68-pin, two-piece S-RAM card of the JEIDA 4.1 / PCMCIA 2.0 Memory Card Guidelines. 2. FUNDAMENTAL CIRCUITS 2.1 CIRCUIT CONFIGURATION CMOS SRAM + Primary Lithium Battery replaceable + Secondary Battery (fixed type/charging type)


    OCR Scan     		68-pin, 4-SR-64 4-SR-128 4-SR-256 4-SR-512 4-sr-1m PDF

    eprom 2904

    Abstract: L 4440 72-Pin SO-DIMM
    Text: Line Up of Hitachi IC Memories Classification SRAM- Total bit Organization word X bit Type Page* HM62W8512A Series. HM628512A Series . HM628512 Series.


    OCR Scan     		512kx8512kx81Mx4-- HM62W8512A HM628512A HM628512 HM674100H HM671400H HM62V8128B HM62V8128 HM62W1664HB HM62W1664H eprom 2904 L 4440 72-Pin SO-DIMM PDF

    SD14

    Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
    Text: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES „ Access Times of 35ns SRAM and 150ns (EEPROM) „ Access Times of 45ns (SRAM) and 120ns (EEPROM) „ Access Times of 70ns (SRAM) and 300ns (EEPROM) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic


    Original     		WSE128K16-XXX 128Kx16 150ns 120ns 300ns 128K16 150ns 120ns 300ns SD14 SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13 PDF

    RCM-01

    Abstract: RC-M01J-DA
    Text: I I I I II t i l I •P ro d u c t designation • When ordering, specify the type of product. • Verify each code against the coding table shown below. • Any blank should be filled with the next character. Prefix Capacity of memory Physical size_ Type of memory


    OCR Scan     		68pin 40pin 45pin 68Pin 27X33 CD1D11 CAS20CAS21CA S30CAS31RAS1V RCM-01 RC-M01J-DA PDF

    S1D13501

    Abstract: QFP14-80 MASKROM QFP14-80 epson TQFP15-100 S1L50000 S1X55033 S1X55053 S1D13502 S1X55103
    Text: PF1227-01 S1X50000 Series S1X50000 Series High Speed/Low Power Embedded Array ● 1P SRAM/2P SRAM/Mask ROM mounted ● Two types available: High-speed type and the low-power-consumption cell type ● Eight models available with different sizes of SRAM/MaskROM


    Original     		PF1227-01 S1X50000 S1D13501 QFP14-80 MASKROM QFP14-80 epson TQFP15-100 S1L50000 S1X55033 S1X55053 S1D13502 S1X55103 PDF

    WSF2816-39G2UX

    Abstract: SD10 SD12 SD13 SD14 SD15 WSF2816-39XX
    Text: White Electronic Designs WSF2816-39XX 128KX16 SRAM/512KX16 FLASH MODULE FEATURES „ Access Times of 35ns SRAM and 90ns (FLASH) „ Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic HIP (Package 400) 128Kx16 SRAM „ 512Kx16 5V FLASH „ Organized as 128Kx16 of SRAM and 512Kx16 of


    Original     		WSF2816-39XX 128KX16 SRAM/512KX16 WSF2816-39G2UX WSF2816-39H1X 512Kx16 SD10 SD12 SD13 SD14 SD15 WSF2816-39XX PDF

    HN613256P

    Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo­ ries is high speed but small capacity, instead, MOS


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    TMS320C80

    Abstract: TMS320C82
    Text: Implementation of the Vector Maximum Search Benchmark on the TMS320C8x Parallel Processor Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., October 1996 SPRA087 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines


    Original     		TMS320C8x SPRA087 TMS320C8x TMS320C80 TMS320C82 PDF

    TMS320C8x

    Abstract: TMS320C80 TMS320C82 SPRU110A
    Text: Implementation of the Vector Maximum Search Benchmark on the TMS320C8x Parallel Processor Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., October 1996 SPRA087 Book Type Two Lines Volume # Book Type Volume # Book Type Two Lines


    Original     		TMS320C8x SPRA087 TMS320C8x max\\16 TMS320C80 TMS320C82 SPRU110A PDF

    TMS320C80

    Abstract: TMS320C82
    Text: Implementation of the Vector Maximum Search Benchmark on the TMS320C8x Parallel Processor Application Report 1996 Digital Signal Processing Solutions Printed in U.S.A., October 1996 SPRA087 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines


    Original     		TMS320C8x SPRA087 TMS320C8x TMS320C80 TMS320C82 PDF

    LY62L2568

    Abstract: No abstract text available
    Text:  LY62L2568 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.4 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Description Initial Issue Adding PKG type : 32 SOP Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L grade


    Original     		LY62L2568 32-pin 36-ball LY62L2568 PDF

    Untitled

    Abstract: No abstract text available
    Text: LY62L2568 256K X 8 BIT LOW POWER CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Description Initial Issue Adding PKG type : 32 SOP Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Deleted L grade


    Original     		LY62L2568 PDF

    27c301

    Abstract: HM6788P-25 HM6788
    Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.


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    IC61C256AH

    Abstract: IC61C256AH-10J IC61C256AH-10N IC61C256AH-10T IC61C256AH-10U IC61C256AH-12J IC61C256AH-12N IC61C256AH-12T
    Text: IC61C256AH Document Title 32K x 8 High Speed SRAM Revision History Revision No History Draft Date 0A 0B 0C 0D Initial Draft Revise typo of tHA on page 7 Add SOP package type Revise typo of sop size at page 2,9 March 23,2001 October 18,2001 February 18,2002


    Original     		IC61C256AH AHSR010-0D actiC61C256AH-20TI IC61C256AH-20UI 300mil 330mil IC61C256AH-20N IC61C256AH-20J IC61C256AH IC61C256AH-10J IC61C256AH-10N IC61C256AH-10T IC61C256AH-10U IC61C256AH-12J IC61C256AH-12N IC61C256AH-12T PDF

    GE SCR Manual

    Abstract: A22-10 TMDB HD6437020 HD6437021 HD6477021 SH7000 SH7020 SH7021 10MD
    Text: Super H RISC engine SH7020 and SH7021 HD6437020, HD6477021, HD6437021 Hardware Manual Rick Geimer Hitachi Micro Systems, Incorporated 8/2/96 Introduction The SH7020 and SH7021 are part of a new generation of reduced instruction-set computer-type RISC microcomputers that integrate RISC-type CPUs and the peripheral functions required for


    Original     		SH7020 SH7021 HD6437020, HD6477021, HD6437021 SH7021 GE SCR Manual A22-10 TMDB HD6437020 HD6437021 HD6477021 SH7000 10MD PDF

    Untitled

    Abstract: No abstract text available
    Text: LY622568 256K X 8 BIT LOW POWER CMOS SRAM Rev. 2.0 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 2.0 Description Initial Issue Revised ISB1/IDR/Test Condition of ICC Adding PKG type : 32 P-DIP Revised Test Condition of ISB1/IDR Adding SL Spec.


    Original     		LY622568 LY622568 152-bit 32-pin PDF

    NEC stacked MCP

    Abstract: NEC MCP SRAM FLASH
    Text: MC-2222xx Memory Description Features Stacked Multi-Chip Package with 32 Mb Flash Memory and Low-Power SRAM The MC-2222xx includes 32 Mb of dual-operation flash memory and 4 Mb or 8 Mb of SRAM in a single multi-chip package MCP . Memory Type Flash Memory


    Original     		MC-2222xx MC-2222xx MC-222242A: MC-222262: MC-222243A: MC-222263: MC-222244A: MC-222264: 2002/Printed M16013EU1V0PB00 NEC stacked MCP NEC MCP SRAM FLASH PDF