Untitled
Abstract: No abstract text available
Text: SLI-343M8G Data Sheet SLI-343 8 Series EXCELED Features ・Viewing angle 2θ 1/2 : 40° ・High brightness ・Low current consumption Color Type ・Competent to direct mount V U D Y M P Specifications Viewing angle 2θ 1/2 / 40 : EXCELED™ Chip Structure
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SLI-343M8G
SLI-343
R1120A
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Untitled
Abstract: No abstract text available
Text: SLI-343M8C Data Sheet SLI-343 8 Series EXCELED Features ・Viewing angle 2θ 1/2 : 40° ・High brightness ・Low current consumption Color Type ・Competent to direct mount V U D Y M P Specifications Viewing angle 2θ 1/2 / 40 : EXCELED™ Chip Structure
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SLI-343M8C
SLI-343
R1120A
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sli-343
Abstract: No abstract text available
Text: SLI-343MC Data Sheet SLI-343 Series Features ・Viewing angle 2θ 1/2 : 40° ・High brightness Color Type ・Competent to direct mount U D Y M Specifications Viewing angle 2θ 1/2 / 40 : High luminous intensity Chip Structure Part No. • SLI-343URC Absolute Maximum Ratings Ta＝25℃
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SLI-343MC
SLI-343
R1120A
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Untitled
Abstract: No abstract text available
Text: SLI-343MG Data Sheet SLI-343 Series Features ・Viewing angle 2θ 1/2 : 40° ・High brightness Color Type ・Competent to direct mount U D Y M Specifications Viewing angle 2θ 1/2 / 40 : High luminous intensity Chip Structure Part No. • SLI-343URC Absolute Maximum Ratings Ta＝25℃
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SLI-343MG
SLI-343
R1120A
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74CB218ARTR
Abstract: 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: U-09-01 Last Buy Deadline for Submission of Order: 13-May-2009
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U-09-01
13-May-2009
13-May-2010
13-Aug-2010
DISCONTI74CB218R
MK74CB218RTR
MK74CB44R
MK74CB44RTR
MK74CG117BF
MK5818SLFTR
74CB218ARTR
7150MLF
1892YLF
MK1726-01SLFTR
1893bflf
5V551DCGI
MK9170
1522MLF PDN
MK9170-01CS08LF
343MPLFT
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PVP134
Abstract: No abstract text available
Text: U N I V ERSAL BACKPLAN ES Alzanti have designed and are now manufacturing a range of Universal Backplanes for use in the high speed assembly and prototyping of 3U ‘Eurorack’ systems. The Eurocard compatible DIN41612 series connector is converted to a convenient screw terminal interface
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DIN41612
PVP183
PVP193
PVP191,
PVP195A,
PVP195A
32way
PVP134
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tic 2260
Abstract: F63TNR FDS6575 L86Z
Text: FAIRCHILD S E M I C O N D U C T O R November 1998 tm FDS65 75 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T h is P -C h a n n e l Logic Level M O S F E T is pro d u ce d u s in g F a irchild S e m ic o n d u c to r's a d v a n c e d P o w e rT re n ch
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FDS65
tic 2260
F63TNR
FDS6575
L86Z
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tic 2260
Abstract: MARKING W1 AD CBVK741B019 F63TNR FDS6375 FDS9953A L86Z MARKING code F050
Text: =M l C O N D U C T O R tm FDS6375 Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h is P -C h a n n e l 2 .5 V s p e c ifie d M O S F E T is p ro d u ce d u s in g F a ir c h ild S e m ic o n d u c t o r 's advanced P o w e rT re n c h pro c e s s th a t has been e s p e c ia lly ta ilo re d
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FDS6375
tic 2260
MARKING W1 AD
CBVK741B019
F63TNR
FDS6375
FDS9953A
L86Z
MARKING code F050
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tic 2260
Abstract: F63TNR FDS6675 L86Z
Text: FAIRCHILD October 1998 SEMICONDUCTOR t m FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T h is P -C h a n n e l Lo gic Level M O S F E T is p ro d u ce d u s in g F a irch ild S e m ic o n d u c to r's a d v a n c e d P o w e rT re n ch
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FDS6675
tic 2260
F63TNR
FDS6675
L86Z
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Untitled
Abstract: No abstract text available
Text: ,V U .g July 1999 U M fc P A I R C H I L_D FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored
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FDS6890A
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Untitled
Abstract: No abstract text available
Text: EMl C O N D U C TO R ! FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the va rio u s peripheral vo lta ge rails required in notebook
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FDS6982
FDS6982
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Supersot6
Abstract: ld18a d872 SSOT-6 MARKING W1 AD CBVK741B019 F63TNR FDC6506P
Text: =M l C O N D U C T O R tm FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET General Description Features These P-Channel logic level MOSFETs are produced using F airch ild S e m ico n d u cto r's ad va nce d Pow erTrench process that has been especially tailored to m inimize
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FDC6506P
30VRDS
Supersot6
ld18a
d872
SSOT-6
MARKING W1 AD
CBVK741B019
F63TNR
FDC6506P
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDR836P P-Channel 2.5V Specified MOSFET General Description Features S u p e rS O T -8 P -C hannel en han cem en t m ode power • -6.1 A, -2 0 V. R ds on = 0 .0 3 0 W @ V QS = -4 .5 V field effect transistors are produced using Fairchild’s
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FDR836P
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supersot-3
Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET MARKING W1 AD 100MS FDN360P SSOT-23
Text: EM I C O N D U C T O R tm FDN360P Single P-Channel PowerTrench MOSFET General Description Features T h is P -C h a n n e l Lo gic Level M O S F E T is p ro d u c e d using Fairchild S em iconductor's advanced Pow erTrench process th a t ha s been e s p e c ia lly ta ilo re d to m in im iz e o n -s ta te
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FDN360P
0220iÂ
supersot-3
Single P-Channel, Logic Level, PowerTrench MOSFET
MARKING W1 AD
100MS
FDN360P
SSOT-23
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5l 0380
Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
Text: 1999 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e se P -G hannel 2.5V s pe cified M O S FETs are produced using Fairchild S e m ic o n d u c to r's a d v a n c e d P ow erT ren ch p rocess th a t ha s been e s p e c ia lly ta ilo re d to m in im ize th e
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FDR838P
43iR-RÃ
5l 0380
sl 0380 r
fs3t
MARKING W1 AD
CBVK741B019
F63TNR
FDR835N
FDR838P
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDC642P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state
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FDC642P
te20/-0
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Untitled
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDC6306P
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tic 2260
Abstract: tnr 221 CBVK741B019 F63TNR FDS6961 FDS6961A FDS9953A L86Z
Text: FAIRCHILD M IC D N D U C T D H April 1999 tm FDS6961 A Dual N-Channel Logic Level PowerTrench General Description MOSFET Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been
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FDS6961
tic 2260
tnr 221
CBVK741B019
F63TNR
FDS6961A
FDS9953A
L86Z
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d872
Abstract: Supersot6 MARKING code GM SOT 323 CF 331 SSOT-6 Supersot 6 MARKING W1 AD CBVK741B019 F63TNR FDC6306P
Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDC6306P
d872
Supersot6
MARKING code GM SOT 323
CF 331
SSOT-6
Supersot 6
MARKING W1 AD
CBVK741B019
F63TNR
FDC6306P
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F63TNR
Abstract: L86Z NDS9435A
Text: FAIRCHILD S E M IC O N D U C T O R May 1996 tm NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high
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NDS9435A
n-27lTYp
F63TNR
L86Z
NDS9435A
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VEB Keramische Werke
Abstract: Keramische Werke Hermsdorf Manifer 183 VEB Kombinat zf filter Ringkerne DDR DDR-102 keramische werke hermsdorf spulen Schalenkerne HERMSDORF EE-55 FERRITE
Text: FERRITE-HANDBUCH K WH KOM BINAT VEB KERAM ISCHE W ERK E HERM SDORF/THÜR. DEUTSCHE DEMOKRATISCHE REPU BLIK A U S G A B E 1970 Abbildungen und Werte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich ist jeweils die Auftragsbestätigung.
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DDR-102
DDR-653
111/18/2-1429S
VEB Keramische Werke
Keramische Werke Hermsdorf
Manifer 183
VEB Kombinat zf filter
Ringkerne DDR
keramische werke hermsdorf spulen
Schalenkerne
HERMSDORF
EE-55 FERRITE
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R8V mark sot 23
Abstract: FZ 300 R 06 KL optron CBVK741B019 F63TNR NDH8321C
Text: January 1999 FAIRCHILD :M l C O N D U C T O R NDH8321 C Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description T h ese dual N- and P -Channel enhancem ent mode power field effect transistors are produced using Fairchild's
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NDH8321
43iR-RÃ
R8V mark sot 23
FZ 300 R 06 KL
optron
CBVK741B019
F63TNR
NDH8321C
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDN342P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized
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FDN342P
OT-23)
otherwise91
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDS5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS5670
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