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    U 35 DIODE Search Results

    U 35 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    U 35 DIODE Price and Stock

    Phoenix Contact PTTB 2 5-DIO/U-O

    Component terminal block - with integrated 1N4007 diode - The max. current is determined by the diode. Installed: Diode 1N 4007 - reverse voltage: 1300 V - maximum continuous current: 0.5 A. - nom. voltage: 500 V - nominal current: 0.5 A - connection method: Push-in connection - number of connections: 4 - cross section: 0.14 mm² - 4 mm² - AWG: 26 - 12 - width: 5.2 mm - color: gray - mounting type: NS 35/7,5 - NS 35/15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PTTB 2 5-DIO/U-O 121
    • 1 -
    • 10 $10.14
    • 100 $7.74
    • 1000 $7.39
    • 10000 $7.39
    Buy Now

    Phoenix Contact UTTB 2 5-DIO/O-U

    Component terminal block - with integrated diode - connection method: Screw connection - cross section: 0.14 mm² - 4 mm² - AWG: 26 - 12 - width: 5.2 mm - color: gray - mounting type: NS 35/7,5 - NS 35/15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UTTB 2 5-DIO/O-U 95
    • 1 -
    • 10 $7
    • 100 $5.5
    • 1000 $5
    • 10000 $4.85
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    Phoenix Contact UKK 5-DIO/O-U

    Component terminal block - with integrated diode - nom. voltage: 500 V - nominal current: 32 A - connection method: Screw connection - number of connections: 4 - cross section: 0.2 mm² - 4 mm² - AWG: 24 - 12 - width: 6.2 mm - color: gray - mounting type: NS 35/7,5 - NS 35/15 - NS 32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UKK 5-DIO/O-U 47
    • 1 $17.53
    • 10 $16.53
    • 100 $14.69
    • 1000 $14.12
    • 10000 $14.12
    Buy Now

    Phoenix Contact UKK 5-DIO/U-O

    Component terminal block - with integrated diode - The max. current is determined by the diode. Installed: Diode 1N 4007 - reverse voltage: 1300 V - maximum continuous current: 0.5 A. - nom. voltage: 500 V - nominal current: 32 A - connection method: Screw connection - number of connections: 4 - cross section: 0.2 mm² - 4 mm² - AWG: 24 - 12 - width: 6.2 mm - color: gray - mounting type: NS 35/7,5 - NS 35/15 - NS 32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UKK 5-DIO/U-O 34
    • 1 $18.34
    • 10 $17.22
    • 100 $15.16
    • 1000 $14.54
    • 10000 $14.54
    Buy Now

    Phoenix Contact PTTB 2 5-2DIO/OL-U/OR-U

    Component terminal block - with integrated 1N4007 diode - The max. current is determined by the diode. Installed: Diode 1N 4007 - reverse voltage: 1300 V - maximum continuous current: 0.5 A. - nom. voltage: 500 V - nominal current: 0.5 A - connection method: Push-in connection - number of connections: 4 - cross section: 0.14 mm² - 4 mm² - AWG: 26 - 12 - width: 5.2 mm - color: gray - mounting type: NS 35/7,5 - NS 35/15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PTTB 2 5-2DIO/OL-U/OR-U
    • 1 -
    • 10 $14.34
    • 100 $11.24
    • 1000 $10.64
    • 10000 $10.64
    Buy Now

    U 35 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SK 35 DGDL 126 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper PI:9 <I <I¥; PG:9 =' U BS VIA -%2&'' ,.8& */'& '5& /E/&1 =' U BS YRWZ VI <I¥;U B F <I%,+A .5 U @ +' =^ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +


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    BAW76

    Abstract: Small Signal Diodes 10k VR BAW76 datasheet BAW75 DO-204AH
    Text: BAW75 and BAW76 Small Signal Diodes DO-204AH DO-35 Glass t c u rod P w Ne Features • Silicon Epitaxial Planar Diodes • Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box


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    PDF BAW75 BAW76 DO-204AH DO-35 D7/10K 20K/box D8/10K BAW75 BAW76 Small Signal Diodes 10k VR BAW76 datasheet DO-204AH

    BAW76

    Abstract: BAW75 10k VR DO-204AH baw76v
    Text: BAW75 and BAW76 Small-Signal Diodes DO-204AH DO-35 Glass t c u rod P New Features • Silicon Epitaxial Planar Diodes • Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box


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    PDF BAW75 BAW76 DO-204AH DO-35 D7/10K 20K/box D8/10K BAW75 BAW76 10k VR DO-204AH baw76v

    IN647

    Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
    Text: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200


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    PDF DO-35 200mA IN647 IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202

    diode T 3512

    Abstract: AR3500 AR3512
    Text: AR3500 thru AR3512 35 Amps. Automotive Rectifier Diodes Voltage Range 50 to 1200 Volts Forward Current 35 Amperes 5VM5EMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ H igh c u rre n t c a p a b ility High su rg e c u rre n t c a p a b ility High reliab ility


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    PDF AR3500 AR3512 UL94V-0 diode T 3512 AR3512

    Untitled

    Abstract: No abstract text available
    Text: A POWERHOUSE RECTIFIERS U LTR A -F A S T R E C T IF IE R S PACKAGE 2 LEAD HERMETIC sBT\ VF 'R !rr VOLTS TJ=100°C AMPS us 50 0.9 0.001 35 15 100 0.9 0.001 35 SPD1515 15 150 0.9 0.001 35 SPD1520 15 200 0.9 0.001 35 SPD1530 15 300 1.15 0.001 35 SPD1540 15 400


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    PDF SPD1505 SPD1510 SPD1515 SPD1520 SPD1530 SPD1540 SPD1550 SPD1560 O-257 SPD1505C

    1NS246B

    Abstract: No abstract text available
    Text: DO-35 glass 0.5 Watt 1N5225B thru 1N5282B Use Advantages u Zener Diodes For use in dipping and stabilizing circuits, where real protection is needed. Competitive glass replacement for plastic DO-35 zener diodes. Compatible with all major automatic assembly equipment.


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    PDF DO-35 1N5225B 1N5282B DO-213AA 1N5225B N5225B 1NS246B

    Untitled

    Abstract: No abstract text available
    Text: 1N5221B - 1N5267B VISHAY 500mW EPITAXIAL ZENER DIODE /U T E M ir I POWER SEHCONNJCTOR/ Features 500mW Power Dissipation High Stability Low Noise Surface Mount Equivalents Available Hemetic Package _L ~T c Mechanical Data_ DO-35 Case: DO-35, Plastic


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    PDF 1N5221B 1N5267B 500mW DO-35, MIL-STD-202, DO-35 200mA 100ms. DS18006

    UV diode 254 nm

    Abstract: ixys 047 MD1000
    Text: □IXYS Advanced Technical Data Power Schottky Rectifier V RSM V RRM V 2X10A VRRM = 35 - 45 V •n Type I ►I T M TO-220 AB V 35 45 35 45 Symbol U DSSK 20 Uv = DSSK 20-0035B S DSSK 20-0045B(S) Test Conditions Maximum Ratings (per diode) rms Uav Uav Tc = 135°C; rectangular, d = 0.5


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    PDF 2X10A O-220 20-0035B 20-0045B D-68623 UV diode 254 nm ixys 047 MD1000

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Power Schottky Rectifier DSSK 28 U = 2 x 14 a VRRM = 35 - 45 V Preliminary data V RSM V RRM V I Type ►I I H TO-220 A B V 35 45 35 45 Symbol DSSK 28-0035A DSSK 28-0045A Test Conditions A Maximum Ratings per diode ^FAV Tc = 156°C; rectangular, d = 0.5


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    PDF O-220 8-0035A 8-0045A

    Untitled

    Abstract: No abstract text available
    Text: MPF6659 M A XIM U M RATINGS Rating Symbol MPF6659 MPF666Û MPF6661 D ra in -So u rce V oltage VDS 35 60 90 V dc Drain-Gate V oltage VDG 35 60 90 V dc G ate-Source V oltage — C o n tin u o u s - Non-repetitive tp « 50 ¿is vg s ±20 ±40 Vg SM Drain Current


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    PDF MPF6659 MPF6659 MPF666Û MPF6661 MPF6661* O-226AE) MPF6660 MPF6661

    Untitled

    Abstract: No abstract text available
    Text: Surface M o u n t sw itch ing and attenuator Silicon PIN diodes Switch application Characteristics @ Ta=+25° C O F= 120MHz Q max II conditions Type DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 V min. 30 35 35 50 100 100 200 200


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    PDF DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 120MHz

    Untitled

    Abstract: No abstract text available
    Text: DSS 10-0035/45A Power Schottky Rectifier U av V rrm VF 10 A 35 • 45 V 0.58 V Preliminary Data v RSM V, V V 35 45 35 45 * f TT\ Type 9 Vsz J ^ DSS 10-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings


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    PDF 10-0035/45A 0-0035A 0-0045A

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr


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    PDF 1N950 1N956 1N951 1N952 1N953 1N954 1N955

    1S1555

    Abstract: 1S15555 1S1553/1S1555
    Text: DO-35 B o_C DIM A B C D HD: MIN 25.40 3.03 0.46 1,52 MAX — 4.44 0,56 2.20 NOTES:1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, U n less Otherw ise Specified at V R Type


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    PDF DO-35 DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4448 1N4531 1S1555 1S15555 1S1553/1S1555

    BZX 9V1

    Abstract: BZX 5V6 bzx 2v7 6v86 8zx 5v6 BZX 150 bzx 8v2 BZX 4V7 8v2 BZX 46-C
    Text: Voltage regulator diodes D O 35 P,ot 500 mW T amb 25 ° C T (yJ( max 175 °C Diodes de régulation de tension DO 35 The regulation voltages are defined according to the E 2 4 series. For other tolerances, consult the manufacturer Les tensions de régulation so n t définies selon ta série £ 24. N o u s consulter p o u r des tolérances différentes.


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    itt diodes

    Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
    Text: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot


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    PDF DO-35 100i2 DO-35 itt diodes ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125

    diac N413

    Abstract: N413 N413M n413m diac diac bidirectional diode ht 40 diac VB01 diac diac with triac DIAC DO35
    Text: DIAC N413 SILICON BIDIRECTIONAL TRIGGER DIODE FEATURES Suitable fo r T R I AC trigger • DO-35 package MAXIMUM RATINGS PACKAGE DIMENSIONS U nit • mm ITEM SYMBOL Peak Current *P Storage Temperature Tstg Junction Temperature Ti 0 2.2 MAX. RATING U N IT


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    PDF DO-35 VbqIvB01 vB02l 1988M diac N413 N413 N413M n413m diac diac bidirectional diode ht 40 diac VB01 diac diac with triac DIAC DO35

    1N750 zener

    Abstract: 1N750 diode 1N750 Zener 5.1V 1N4370 1N4371 1N4372 1N746 1N747 1N748
    Text: 1 N 7 46 THRU 1 N 7 5 9 AND 1 N 4 37 0 1 N 4 37 2 th r u 500mW SILICON ZENER DIODES VOLTAGE RANGE 2.4 to 12.0 V olts FEATURES * Zener voltage 2. 4V to 12. 0V * Metallurgical^ bonded device types DO-35 MECHANICAL CHARACTERISTICS * CASE: Hermetically sealed glass case. DO - 35.


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    PDF 1N746 1N759 1N4370 1N4372 500mW 200mA: 1N750 1N751 1N752 1N750 zener 1N750 diode 1N750 Zener 5.1V 1N4371 1N4372 1N747 1N748

    IN968B

    Abstract: IN5229B IN5227B MMBZ5239B IN5240B IN5240 MMBZ5231B 1N5217B S57B MMBD5248B
    Text: Fairchild Semiconductor [ ¡ j ^ g pQwer an j Sjnna| TeClMOlOClieS Selection Guides Zener Diodes Zener Diodes T h ro u g h - H a le (DQ -35 S u r f a c e M o u n t (SO T-23 ) *ZY A (mA) SO T -2 3 MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B


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    PDF MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5235B IN968B IN5229B IN5227B MMBZ5239B IN5240B IN5240 1N5217B S57B MMBD5248B

    1n4148 D035

    Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
    Text: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um


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    PDF LL-34/35 1N4156 1N4157 1N4829 1N4830 MPD200 MPD300 DO-35 1n4148 D035 BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE

    35VW

    Abstract: No abstract text available
    Text: • 7AZAW OOOflOl? ■RHM K / L ig h t Emitting Diodes SLT-35 = S erie s SLT-35 Series J f¿ 7 > y 3 X 4 .5 m m Triangular Lamps 1 L E D 5J « y 0 / D im e n s io n s (U n it: mm) S L T - 3 5 v U —X t t , f l i t * t ^ t C G a P | g 3 X 4 . 5 m m O ~ ^ j2 H ^


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    PDF SLT-35 SLT-35 Q00flQ23 35VW

    LN4149

    Abstract: 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914
    Text: a SEMICON DUC TORS INC CHE » | 613bb5D □□DDSS7 S | Silicon Switching Diodes DO-35 Package ABSOLUTE M A X IM U M R ATING S @25<>C Storage Temperature .,. Operating Temperature.


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    PDF 013bbSD 00DDSS7 DO-35 1N4148 1NS53 LN4149 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914

    Untitled

    Abstract: No abstract text available
    Text: LC2M0S Precision Mini-DIP Analog Switch ADG419 ANALOG DEVICES FEATURES 44 V Supply M axim um Ratings Vsg to V DD Analog Signal Range Low On Resistance < 35 i l U ltralo w Power Dissipation (< 35 (jiW) Fast Transition Tim e (160 ns max) Break-Before-Make Switching Action


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    PDF ADG419 DG419 diss22