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Alpha & Omega Semiconductor AOU2N60 MOSFET N-CH 600V 2A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOU2N60	Tube			4,000	1 - 10 - 100 - 1000 - 10000 $0.23268	Buy Now
TME	AOU2N60		3,810		3	1 - 10 $0.412 100 $0.331 1000 $0.295 10000 $0.283	Buy Now
Alpha & Omega Semiconductor AOU2N60A MOSFET N-CH 600V 2A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOU2N60A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FQU2N60TU MOSFET N-CH 600V 2A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU2N60TU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC FQU2N60TU MOSFET N-CH 600V 2A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU2N60TU	Tube			417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
Rochester Electronics LLC SSU2N60BTU N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SSU2N60BTU	Bulk			952	1 - 10 - 100 - 1000 $0.32 10000 $0.32	Buy Now

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U2N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
U2N60 Abstract: No abstract text available Text: WFD/U2N60 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol	Original	PDF	WFD/U2N60 30TYP U2N60
U2N60 Abstract: 30V 20A power p MOSFET Text: SFD/U2N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol	Original	PDF	SFD/U2N60 30TYP U2N60 30V 20A power p MOSFET
U2N60 Abstract: No abstract text available Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V	Original	PDF	SSR/U2N60A U2N60
D2N60 Abstract: U2N60 Text: PJD2N60 / U2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current	Original	PDF	PJD2N60 PJU2N60 2002/95/EC O-252 O-251 O-252 O-251 MIL-STD-750 D2N60 U2N60
SSR -100 DD Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471 Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|iA Max. @ VDS = 600V	OCR Scan	PDF	SSR/U2N60A b4112 0G40471 SSR -100 DD 600V 2A MOSFET N-channel U2N60
U2N60 Abstract: *c1251c Text: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■	OCR Scan	PDF	SSR/U2N60A U2N60 *c1251c
MOSFET SSR Abstract: U2N60 Text: SSR/U2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max @ Lower R ^o *, : 3.892 Q (Typ.)	OCR Scan	PDF	SSR/U2N60A --p300nF MOSFET SSR U2N60
U2N60 Abstract: No abstract text available Text: Advanced SSR/U2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|^A (Max.) @ V DS = 600V	OCR Scan	PDF	SSR/U2N60A \61tage U2N60
U2N60 Abstract: No abstract text available Text: Advanced SSR/U2N60A P o w e r MOSFET FEATURES BV DSS = 600 V • R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance lD ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :25 \|a.A (M ax.) @ V DS = 600V	OCR Scan	PDF	SSR/U2N60A U2N60
EZ-34 Abstract: IRFM120A U2N60 Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A	OCR Scan	PDF	IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A EZ-34 IRFM120A U2N60
U2N60 Abstract: SSU2N60 SSU2N55 SSR2N60 250M SSR2N55 Text: SSR2N60/55 U2N60/55 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower R ds ON Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSR2N60/55 SSU2N60/55 SSR2N60/U2N60 SSR2N55/U2N55 SSR2N60/55 SSR2N60 SSU2N60 SSR2N55 SSU2N55 U2N60 250M