UGF18060F Search Results

UGF18060F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF18060F		Cree	FET Transistor, 60W, 1.8GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF18060F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UGF18060F Abstract: 10w 900MA MRF18060 UGF18060 UGF18060P Text: UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	UGF18060 MRF18060 CDMA2000: UGF18060F UGF18060F 10w 900MA MRF18060 UGF18060 UGF18060P	PDF

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UGF18060F

Abstract: 10w 900MA MRF18060 UGF18060 UGF18060P
Text: UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier

Original

UGF18060 MRF18060 CDMA2000: UGF18060F UGF18060F 10w 900MA MRF18060 UGF18060 UGF18060P

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