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    UGF21060P Search Results

    UGF21060P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF21060P Cree FET Transistor, 60W, 2.17GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P