2SC2586
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.
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2SC2586
2SC2586
P11693EJ1V0DS00
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1032 The RF Line UHF Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 6.0 W, TO 1.0 GHz UNEAR UHF POWER TRANSISTOR
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MRF1032
MRF1032
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR
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MRF1031
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MHW2727
Abstract: Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module
Text: MOTOROLA Order this document by MHW2727/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifiers MHW2727-3 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios.
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MHW2727/D
MHW2727-3
420AC
MHW2727
Amplifier Modules motorola
MHW2727-3
sps 1951
Motorola UHF Power Amplifier Module
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.
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2SC2586
11693EJ1V0D
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MHW820-1
Abstract: MHW820-3 MOTOROLA hybrid amplifiers MHW820-3
Text: MOTOROLA • SEMICONDUCTOR MHW820-1 MHW820-2 MHW820-3 TECHNICAL DATA The RF Line 18/20 W — 806-950 MHz RF POWER AMPLIFIERS UHF POWER AMPLIFIERS . designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to
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MHW820-1
MHW820-2
MHW820-3
MHW820-1
MHW820-3)
EB-107.
MHW820-3
MOTOROLA hybrid amplifiers MHW820-3
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Motorola UHF Power Amplifier Module
Abstract: MHW2805-1 MHW2805-2 420AB
Text: Order this document by MHW2805/D MHW2805-1 MHW2805-2 Advance Information UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:
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MHW2805/D
MHW2805-1
MHW2805-2
420AB
Motorola UHF Power Amplifier Module
MHW2805-1
MHW2805-2
420AB
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.
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2SC2586
2SC2586
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW707/D SEMICONDUCTOR TECHNICAL DATA MHW707-1 MHW707-2 MHW707-3 MHW707-4 The RF Line UHF Power Amplifiers Designed for 7.5 Volt UHF power amplifier applications in industrial and commercial equipment primarily hand portable radios.
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MHW707/D
MHW707-1
MHW707-2
MHW707-3
MHW707-4
MHW707â
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MHW2805-1
Abstract: MHW2805-2 Motorola UHF Power Amplifier Module
Text: Order this document by MHW2805/D MHW2805-1 MHW2805-2 ARCHIVE INFORMATION UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:
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MHW2805/D
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MHW2805-1
MHW2805-2
Motorola UHF Power Amplifier Module
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LF1002
Abstract: MHW2821 MHW2821-1 MHW2821-2 phcenix MHW2621-1
Text: .— MOTOROLA SEMICONDUCTOR ‘* TECHNICAL Order this document bv MHW28211D DATA The RF Line MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications commercial FM equipment operating from 806 to 950 MHz.
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MHW28211D
MHW2821-1
MHW2821-2
MHW2821
MHW2821
Arizona85036
2PHX246180-O
23E1l
LF1002
MHW2821-1
MHW2821-2
phcenix
MHW2621-1
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MHW2821-1
Abstract: 81 210 W 20 MHW2821 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power
Text: Order this document by MHW2821/D MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 V UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 V Characteristics: RF Input Power: ≤250 mW MHW2821–1
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MHW2821/D
MHW2821-1
MHW2821-2
MHW2821
301AB
MHW2821-1
81 210 W 20
MHW2821-2
Motorola UHF Power Amplifier Module
motorola application note amplifier power
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MHW2821-1
Abstract: MHW2821 MHW2821-2
Text: MOTOROLA Order this document by MHW2821/D SEMICONDUCTOR TECHNICAL DATA MHW2821-1 MHW2821-2 The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.
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MHW2821/D
MHW2821-1
MHW2821-2
MHW2821
301AB
MHW2821-1
MHW2821-2
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BLV862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification File under Discrete Semiconductors, SC08a 1996 Jun 11 Philips Semiconductors Preliminary specification UHF linear push-pull power transistor FEATURES
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BLV862
SC08a
OT262B
SCA49
127041/1200/02/pp8
BLV862
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Untitled
Abstract: No abstract text available
Text: b S H T û E 1! D O lflO öl ÖTT MITSUBISHI SEMICONDUCTOR GsAsMMIC MGF7113P UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION Unlttmillimeters OUTLINE DRAWING MGF7113P is a monolithic microwave integrated circuit for use in UHF band power amplifiers. 3 C Z I@
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MGF7113P
MGF7113P
900MHz
240mA
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BY206
Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW34
BY206
C102F
BZY88-C3V3
BLW34
BZY88C-3V3
100A-2RO-C-PX-50
uhf amplifier design Transistor
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BLW33
Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW33
BLW33
BY206
BZY88-C3V3
SOT122A
BZY88C-3V3
application note blw33
BZY88
npn transistor dc 558
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BY206
Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW32
BY206
BZY88
BZY88-C3V3
BLW32
BZY88C-3V3
2222 809 05003
MGP430
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cermolox
Abstract: TP105 burle "Power Tube"
Text: 4665 Power Tube UHF Pulsed Power Amplifier Tube - Cermolox - Forced-Air-Cooled - Coaxial Terminals - Full Input to 1215 MHz - 65kW Peak Pulsed Power Output - Controlled Interelectrode Capacity The BURLE 4665 is designed for use as a reliable UHF pulsed
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2SC2762
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIALTRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC2762 is an NPN silicon epitaxial transistor designed for in millimeters UHF-band medium pow er amplifiers.
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2SC2762
2SC2762
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Power UHF amplifiers 432 MHz
Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES
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BLF2022-125
OT634A
SCA75
613524/03/pp8
Power UHF amplifiers 432 MHz
Transistor 1308
transistor 1334
SOT634A
BLF2022-125
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2222 031 capacitor philips
Abstract: BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D099 BLV861 UHF linear push-pull power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861
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M3D099
BLV861
SCA57
127047/00/05/pp12
2222 031 capacitor philips
BLV861
SMD ic catalogue
transistor bd139
mexico Ceramic capacitor 105
philips power transistor bd139
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TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES
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M3D379
BLF1820-90
15-Aug-02)
TRANSISTOR SMD MARKING CODE w2
smd TRANSISTOR code marking w2
smd transistor marking u1
SMD transistor MARKING CODE 312
TEKELEC
all transistor book
AN10229
transistor smd marking code c3
smd transistor marking C14
8DS3
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2222 031 capacitor philips
Abstract: transistor bd139 BLV862 BD139 philips power transistor bd139 AN98014 smd transistor Nr 912 smd transistor SMD transistor L17 UT70-25
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Oct 14 1999 Jun 25 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PINNING FEATURES
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M3D091
BLV862
125002/05/pp12
2222 031 capacitor philips
transistor bd139
BLV862
BD139
philips power transistor bd139
AN98014
smd transistor Nr
912 smd transistor
SMD transistor L17
UT70-25
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