SGM2016AM
Abstract: SGM2016AP dual-gate
Text: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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SGM2016AM/AP
SGM2016AM/AP
SGM2016AM
SGM2016AP
900MHz
M-254
SGM2016AM
SGM2016AP
dual-gate
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3SK166A
Abstract: 3SK166A-0 3SK166A-2 N-Channel, Dual-Gate FET
Text: 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to
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3SK166A
3SK166A
800MHz
M-254
3SK166A-0
3SK166A-2
N-Channel, Dual-Gate FET
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SGM2016AN
Abstract: dual-gate SGM2016 N-Channel, Dual-Gate FET
Text: SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
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SGM2016AN
SGM2016AN
M-281
900MHz
dual-gate
SGM2016
N-Channel, Dual-Gate FET
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dual-gate
Abstract: No abstract text available
Text: SONY SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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SGM2016AM/AP
SGM2016AM/AP
900MHz
SGM2016AM
M-254
SGM2016AP
M-255
dual-gate
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SONY 877
Abstract: No abstract text available
Text: SONY 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to
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3SK166A
800MHz
M-254
3SK166A
SONY 877
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Untitled
Abstract: No abstract text available
Text: SO N Y SGM2016AN GaAs N-channel Dual-Gate MES FET Prelim inary Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,
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SGM2016AN
SGM2016AN
900MHz
M-281
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3SK166A
Abstract: nf 922 3SK166A-0 3SK166A-2 C 3807 transistor 3SK166
Text: 3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF
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3SK166A
3SK166A
800MHz
M-254
nf 922
3SK166A-0
3SK166A-2
C 3807 transistor
3SK166
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Untitled
Abstract: No abstract text available
Text: 3SK166A SONY GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs M ES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to
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3SK166A
3SK166A
800MHz
0Q2D24A
M-254
A3fl23fl3
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0945 transistor
Abstract: Sony Semiconductor M-281 SGM2016AN dual-gate
Text: SONY SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.
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SGM2016AN
SGM2016AN
900MHz
M-281
JO-651
M-281
0945 transistor
Sony Semiconductor M-281
dual-gate
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3SK166A
Abstract: 3SK166A-0 3SK166A-2 3SK1
Text: 3SK166A GaAs N-channel Dual Gate MES FET Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.
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3SK166A
3SK166A
800MHz
M-254
3SK166A-0
3SK166A-2
3SK1
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Untitled
Abstract: No abstract text available
Text: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1
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HA21001MS
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3SK80
Abstract: No abstract text available
Text: 3SK80 MOS F ET SILICON N Ç HANNEL DUAL GATE MOS FET UHF AMPLIFIER UHF T V TUNER R F AMPLIFIER UHF a « * « « « UHF T V * * - * * « * * « * t. * - n c m i I r - »1 Cm > j r *> : otm «. / • * W t« 'P h w i— i • - la mm I H*t» —< > j,-n
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3SK80
la-200
3SK80
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BF980
Abstract: BF980A
Text: BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.
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BF980A
BF980
BF980A
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Dual-Gate Mosfet
Abstract: No abstract text available
Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF997 PINNING APPLICATIONS • UHF and VHF applications such as UHF/VHF television tuners and professional communications equipment. • Especially intended for use in pre-amplifiers in CATV
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OT143
BF997
Dual-Gate Mosfet
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3SK146
Abstract: No abstract text available
Text: 3SK146 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm TV TUNER UHF MIXER APPLICATIONS. FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : CrSs=0.02pF Typ. . Low Noise Figure : NF=2.6dB(Typ.)
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3SK146
800MHz
TTA25A200A
3SK146
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK127 T V TUNER, UHF RF AM PLIFIER APPLICATIONS. T V TUNER, UHF M IXER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max. • Low Noise Figure : NF = 3.2dB (Typ.)
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3SK127
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Untitled
Abstract: No abstract text available
Text: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.
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BF980A
CA10S
003ST43
bti53t131
0035T44
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3SK127
Abstract: No abstract text available
Text: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS TV TUNER, UHF M IXER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max.
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3SK127
3SK127
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. TV TUNER, UHF M IXER APPLICATIONS. • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Max.
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3SK127
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3SK320
Abstract: "GaAs N-channel Dual Gate" 3SK3
Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO −6 V Gate 2-drain voltage
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3SK320
3SK320
"GaAs N-channel Dual Gate"
3SK3
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dual-gate
Abstract: No abstract text available
Text: Short-form product specification Philips Sem iconductors Silicon N-channel dual-gate MOS-FET BF980A APPLICATIONS • UHF applications such as UHF television tuners with 12 V supply voltage and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package
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BF980A
dual-gate
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3SK320
Abstract: 1202 toshiba transistor
Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO -6 V Gate 2-drain voltage VG2DO
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3SK320
3SK320
1202 toshiba transistor
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3SK320
Abstract: L 0946
Text: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage VG1DO V V Gate 1-Source Voltage
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3SK320
961001EAC1
3SK320
L 0946
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Oct 31 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PINNING - SOT559A FEATURES • Dual band GSM amplifier PIN • 3.6 V nominal supply voltage
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M3D454
BGY280
GSM1800
GSM900
OT559A
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