Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UHF TV POWER TRANSISTOR Search Results

    UHF TV POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    UHF TV POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TV power transistor

    Abstract: uhf tv power transistor 250 w
    Text: ERICSSON ^ PTB 20020 150 Watts P-Sync, 470-800 MHz UHF TV Power Transistor D escription The 20020 is a class AB, NPN, common em itter UHF TV power transistor intended for 2 8 -3 2 Vdc operation across the 470 to 800 MHz UHF TV frequency band. It is rated at 150 watts P-sync minimum


    OCR Scan
    PDF

    725-MHz

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20020 150 Watts P-Sync, 470-800 MHz UHF TV Power Transistor Description The 20020 is an NPN com m on em itter UHF TV pow er transistor intended for 2 8 -3 2 Vdc class AB operation across the 470 to 800 MHz UHF TV frequency band. It is rated at 150 watts P-sync minimum


    OCR Scan
    PDF

    power transistors cross reference

    Abstract: TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492
    Text: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


    Original
    SD1448 SD4011 SD1489 SD1492 SD4100 TSD4200 TCC596 SD1439 TCC597 SD1449 power transistors cross reference TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492 PDF

    X200C

    Abstract: SD4100
    Text: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


    Original
    SD1439 SD1449 SD1437 SD1448 SD4011 SD1732 SD4010 SD1490 TCC596 X200C SD4100 PDF

    IC 2832

    Abstract: TV power transistor
    Text: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description Key Features The 20081 is a class AB, NPN, common emitter RF Power Transistor intended for 28-32 VDC operation across the 470860 UHF TV Power MHz frequency band. It is rated at 100


    OCR Scan
    100mA 32Vdc, IC 2832 TV power transistor PDF

    XM122

    Abstract: No abstract text available
    Text: SFJIIIS SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


    OCR Scan
    SD1439 SD1449 SD1437 SD1448 SD4011 SD1732 SD4010 SD1490 TCC596 TCC597 XM122 PDF

    SD1439

    Abstract: TCC593 power transistors cross reference M119 M122 M175 SD1437 SD1448 SD1449 SD1732
    Text: SILICON POWER TRANSISTORS UHF TV/LINEARTI iä,V " ï;-,.'-. SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency


    OCR Scan
    SD1439 SD1449 SD1437 SD1448 SD4011 SD1732 SD4010 SD1490 TCC593 power transistors cross reference M119 M122 M175 PDF

    TV power transistor

    Abstract: ERICSSON 20101 ERICSSON+20101
    Text: e PTB 20101 175 Watts P-Sync, 470–860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation,


    Original
    1-877-GOLDMOS 1301-PTB TV power transistor ERICSSON 20101 ERICSSON+20101 PDF

    uhf tv power transistor

    Abstract: TV power transistor
    Text: e PTB 20081 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power.


    Original
    1-877-GOLDMOS 1301-PTB uhf tv power transistor TV power transistor PDF

    TV power transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power.


    OCR Scan
    PDF

    TRIMMER capacitor 5-60 pF

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and


    OCR Scan
    R35-3 TRIMMER capacitor 5-60 pF PDF

    TV power transistor

    Abstract: uhf tv power transistor 20237 100 pf, ATC Chip Capacitor TRIMMER capacitor 5-60 pF kr 720 uhf tv power transistor 250 w 20236
    Text: e PTB 20237 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and


    Original
    1-877-GOLDMOS 1301-PTB TV power transistor uhf tv power transistor 20237 100 pf, ATC Chip Capacitor TRIMMER capacitor 5-60 pF kr 720 uhf tv power transistor 250 w 20236 PDF

    PTB20020

    Abstract: TV power transistor IC 2832
    Text: ERICSSON ^ PTB 20020 150 Watts P-Sync, 470 - 800 MHz UHF TV Power Transistor Description Key Features The 20020 is a class AB, NPN, common emitter RF Power Transistor intended for 28-32 VDC operation across the 470800 MHz UHF TV frequency band. It is rated at 150 Watts


    OCR Scan
    100mA 100rrA 725MHz, /-920kHz PTB20020 TV power transistor IC 2832 PDF

    ERICSSON 20101

    Abstract: TV power transistor tic55
    Text: ERICSSON ^ PTB 20101 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, com m on em itter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation,


    OCR Scan
    PDF

    2SC1070

    Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low


    OCR Scan
    2SC1070 s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF PDF

    20188

    Abstract: 470 860 mhz AN uhf tv power transistor 250 w NPN transistor 5 watts
    Text: e PTB 20188 4 Watts P-Sync, 470–860 MHz UHF TV Linear Power Transistor Description The 20188 is an NPN common emitter UHF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 4 watts output power, and may be used for both CW and PEP


    Original
    75ier -16dB, 1-877-GOLDMOS 1301-PTB 20188 470 860 mhz AN uhf tv power transistor 250 w NPN transistor 5 watts PDF

    20011

    Abstract: No abstract text available
    Text: e PTB 20011 20 Watts P-Sync, 470–860 MHz UHF TV Linear Power Transistor Description The 20011 is an NPN common emitter UHF power transistor intended for 26.5 Vdc class A operation from 470 to 860 MHz. It is rated at 20 watts p-sync output power, and may be used for both CW and PEP


    Original
    1-877-GOLDMOS 1301-PTB 20011 PDF

    2SC3660

    Abstract: rf amplifier 100w linear amplifier 470-860 transistor npn 100w amplifier TRANSISTOR 246
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:


    OCR Scan
    2SC3660 2SC3660 G000D31 rf amplifier 100w linear amplifier 470-860 transistor npn 100w amplifier TRANSISTOR 246 PDF

    transistor npn 100w amplifier

    Abstract: 2SC3660 rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3660 Silicon NPN high power UHF transistor 2SC3660 is designed for Class AB Push­ Pull linear power amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:


    OCR Scan
    2SC3660 G000D31 transistor npn 100w amplifier rf power amplifier 100w 470-860 rf amplifier 100w npn 28v 100w amplifier PDF

    tpv593

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line UHF Linear Power Transistor 25 V — 470-860 Mhz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r p re-d river and d rive r stages in band IV and V TV tra n sp ose rs and tra n s ­


    OCR Scan
    TPV593 244C-01, PDF

    200W PUSH-PULL

    Abstract: 200W power transistor linear amplifier 470-860 200W AMPLIFIER 200w Transistor 2SC3218A uhf linear amplifier module transistor 200w
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218A Silicon NPN high power UHF transistor 2SC3218A is designed for Class AB Push-Pull Linear amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:


    OCR Scan
    2SC3218A 2SC3218A 200W PUSH-PULL 200W power transistor linear amplifier 470-860 200W AMPLIFIER 200w Transistor uhf linear amplifier module transistor 200w PDF

    linear amplifier 470-860

    Abstract: 200w transistor npn 200w transistor Common emitter configuration 200W AMPLIFIER 200W PUSH-PULL 2SC3218A amplifier 200w 200W power transistor
    Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218A Silicon NPN high power UHF transistor 2SC3218A is designed for Class AB Push-Pull Linear amplifier applications in a common emitter configuration specifically in operating TV transmitters . Output Power: Frequency Range:


    OCR Scan
    2SC3218A 2SC3218A 0000G33 linear amplifier 470-860 200w transistor npn 200w transistor Common emitter configuration 200W AMPLIFIER 200W PUSH-PULL amplifier 200w 200W power transistor PDF

    diode LT 1n4007

    Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch ­


    OCR Scan
    5055B BC337 BD135 1N4007 100A101JP50 diode LT 1n4007 transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 3 pin TRIMMER capacitor 1n4007 mttf PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5051 Advance Information The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . sp ecifica lly desig n ed fo r high p o w e r vis io n or sound TV a m p lifie rs o p e ra tin g Class


    OCR Scan
    TPV5051 BD135 PDF