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    ULS 2004 Search Results

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    CO-316RASMAX2-004 Amphenol Cables on Demand Amphenol CO-316RASMAX2-004 RG316 High Temperature Teflon Coaxial Cable - SMA Right Angle Male to SMA Right Angle Male 4ft Datasheet
    CO-058RABNCX2-004 Amphenol Cables on Demand Amphenol CO-058RABNCX2-004 BNC Right Angle Male to BNC Right Angle Male (RG58) 50 Ohm Coaxial Cable Assembly 4ft Datasheet
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    Vishay Sprague ULS2004R883

    HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAY Buffer/Inverter Based Peripheral Driver, 7 Driver, BIPolar, CDIP16
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    ULS 2004 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ULS2004EK Sprague HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Scan PDF
    ULS2004H Sprague HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Scan PDF
    ULS2004J Integrated Power Semiconductors Darlington Transistor Arrays Scan PDF
    ULS2004L Integrated Power Semiconductors Darlington Transistor Arrays Scan PDF
    ULS2004R Sprague HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Scan PDF

    ULS 2004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDG8204 SamHop Microelectronics Corp. May, 2004 ver1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS 20V ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω ) Max Rugged and reliable. 30 @ VGS = 4.0V 5A Surface Mount Package.


    Original     		PDF SDG8204

    55N02

    Abstract: No abstract text available
    Text: S DP /B 55N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) ID Max S uper high dense cell design for extremely low R DS (ON). High power and current handling capability.


    Original     		PDF 55N02 O-220 O-263 55N02

    8207

    Abstract: No abstract text available
    Text: S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.


    Original     		PDF

    85N03

    Abstract: 85N03L
    Text: S DP /B 85N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 5 @ V G S = 10V


    Original     		PDF 85N03L O-220 O-263 85N03 85N03L

    Untitled

    Abstract: No abstract text available
    Text: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		PDF U/D20N03L O-252 O-251 O-252AA O-252

    SDM9926

    Abstract: No abstract text available
    Text: SDM9926 SamHop Microelectronics Corp. May. 2004 ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 30 @ VGS = 4.0V 20V 5A Surface Mount Package.


    Original     		PDF SDM9926 DM9926 SDM9926

    Untitled

    Abstract: No abstract text available
    Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.


    Original     		PDF STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 O-252

    DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.


    Original     		PDF STU/D9916L O-252 O-251 O-252AA U/D9916L Tube/TO-252 O-252 DD 127 D TRANSISTOR

    60n03l

    Abstract: 60N03
    Text: S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) Max ID High power and current handling capability. 11 @ V G S = 10V


    Original     		PDF 60N03L O-220 O-263 60n03l 60N03

    Untitled

    Abstract: No abstract text available
    Text: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V


    Original     		PDF STU/D3055L2 O-252 O-251 O-252AA U/D3055L2 O-252

    Untitled

    Abstract: No abstract text available
    Text: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.


    Original     		PDF STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 Tube/TO-252

    Untitled

    Abstract: No abstract text available
    Text: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V


    Original     		PDF SDU/D20N03L O-252 O-251 O-252AA DU/D20N03L Tube/TO-252 O-252

    d3055

    Abstract: No abstract text available
    Text: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V


    Original     		PDF STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 Tube/TO-252 d3055

    D20N03L

    Abstract: D20N03
    Text: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.


    Original     		PDF U/D20N03L O-252 O-251 O-252AA Tube/TO-252 O-252 D20N03L D20N03

    Untitled

    Abstract: No abstract text available
    Text: S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S T U/D9916L Green Product S amHop Microelectronics C orp. Mar.25 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ө) Max R ugged and reliable.


    Original     		PDF U/D9916L O-252 O-251 O-252AA Tube/TO-252 O-252

    Untitled

    Abstract: No abstract text available
    Text: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V


    Original     		PDF SDU/D20N03L O-252 O-251 O-252AA DU/D20N03L O-252

    A17S

    Abstract: No abstract text available
    Text: S DM40N02 S amHop Microelectronics C orp. May ,2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 44 @ V G S = 4.5V


    Original     		PDF DM40N02 300us A17S

    D50N03

    Abstract: D50N03L
    Text: S DU/D50N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		PDF DU/D50N03L O-252 O-251 O-252AA Tube/TO-252 O-252 D50N03 D50N03L

    d30n02

    Abstract: No abstract text available
    Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V


    Original     		PDF DU/D30N02 O-252 O-251 O-252AA Tube/TO-252 O-252 d30n02

    M8206

    Abstract: No abstract text available
    Text: S T M8206 S amHop Microelectronics C orp. Nov 22, 2004 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.


    Original     		PDF M8206 300us M8206

    Diode Ds 135. 12A

    Abstract: M4884A
    Text: S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON (m W) S uper high dense cell design for low R DS (ON ). typ R ugged and reliable. 6 @ V G S = 10V


    Original     		PDF M4884A Diode Ds 135. 12A M4884A

    Untitled

    Abstract: No abstract text available
    Text: S T U/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -20A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.


    Original     		PDF U/D1530P O-252 O-251 O-252AA O-252

    Untitled

    Abstract: No abstract text available
    Text: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V


    Original     		PDF DU/D9916 O-252 O-251 O-252AA O-252