ultra low igss pA
Abstract: ultra low igss LS831 LS830 LS832 LS833
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.
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LS830
LS831
LS832
LS833
70nV/Hz
ultra low igss pA
ultra low igss
LS833
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ultra low igss pA mosfet
Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.
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LS830
LS831
LS832
LS833
70nV/Hz
ultra low igss pA mosfet
jfet transistor 2n4391
"DUAL N-Channel JFET"
ultra low Ciss jfet
sstpad100 "spice"
2n4416 transistor spice
jfet n channel ultra low noise
2N44
Ultra High Input Impedance N-Channel JFET Amplifier
2n3955 transistor spice
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ultra low igss pA
Abstract: No abstract text available
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS830
LS831
LS832
LS833
70nV/â
25-year-old,
ultra low igss pA
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Untitled
Abstract: No abstract text available
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
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LS830
LS831
LS832
LS833
70nV/â
25-year-old,
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Untitled
Abstract: No abstract text available
Text: LSK189 LOW NOISE, LOW CAPACITANCE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8V/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 TO 92 TOP VIEW SOT-23 TOP VIEW Maximum Temperatures Storage Temperature
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LSK189
OT-23
300mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
25-year-old,
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ls846
Abstract: No abstract text available
Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C
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LS846
OT-23
300mW
25-year-old,
ls846
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Untitled
Abstract: No abstract text available
Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C
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LS846
OT-23
300mW
25-year-old,
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LSK489
Abstract: LSK186 lsk 489 amelco
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.5nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
LSK489
LSK186
lsk 489
amelco
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LSK489
Abstract: No abstract text available
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
25-year-old,
LSK489
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LSK186
Abstract: No abstract text available
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
25-year-old,
LSK186
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SD411
Abstract: XSD411
Text: N-Channel Enhancement Mode Dual DMOS FET CORPORATION SD411 FEATURES • Normally "OFF" Configuration • High Speed Switching. . . . . . . . . . under 1 ns typically Low Capacitance . . . . . . . . . ciss <3.5 pf (typically) • Ultra • Tight Matching Characteristics
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SD411
SD411
80sec,
-55oC
125Co
XSD411
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Untitled
Abstract: No abstract text available
Text: LS832 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS832 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is
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LS832
70nV/Hz
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Untitled
Abstract: No abstract text available
Text: LS832 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS832 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is
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LS832
70nV/Hz
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Untitled
Abstract: No abstract text available
Text: LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is
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LS831
70nV/Hz
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70nV
Abstract: No abstract text available
Text: LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is
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LS831
70nV/Hz
70nV
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Untitled
Abstract: No abstract text available
Text: LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is
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LS830
LS830
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Untitled
Abstract: No abstract text available
Text: LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is
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LS830
70nV/Hz
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Untitled
Abstract: No abstract text available
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71
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LS843
LS844
LS845
OT-23
400mW
25-year-old,
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LS845
Abstract: No abstract text available
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71
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LS843
LS844
LS845
OT-23
400mW
25-year-old,
LS845
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FET U310
Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW
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U/J/SST308
350mW
500mW
OT-23
FET U310
U310 fet
mosfet 2n4351
low noise low frequency JFET
j174
LS312 equivalent
N-CHANNEL LOW NOISE AMPLIFIER
j177 equivalent transistor
10mA JFET
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ultra low igss pA
Abstract: electrometer U421 U422 U423 U426 TO78 package U421-U426 g1d1
Text: N-Channel Dual JFET CORPORATION U421 – U426 FEATURES • Ultra Low Input Bias Current . . . . . . . 250 Fempto Amps • Low Operating Current • Tight Matching Characteristics APPLICATIONS Low Leakage FET Input Op Amps • Ultra • Electrometer • Infrared Detectors
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20log
-55oC,
125oC
ultra low igss pA
electrometer
U421
U422
U423
U426
TO78 package
U421-U426
g1d1
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ultra low igss pA
Abstract: LS845 LS843 LS844 MONOLITHIC DUAL N-CHANNEL JFET SSG11
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS843
LS844
LS845
ultra low igss pA
LS845
MONOLITHIC DUAL N-CHANNEL JFET
SSG11
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LSK170A
Abstract: LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise
Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
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LSK170
-500pA
OT-23
2SK170
400mW
LSK170A
LSK170
LSK170C
LSK170B
replacement 2sk170
2SK170
2SK170 to92
LSK389 equivalent
n-channel JFET sot23
jfet n channel ultra low noise
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