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    ULTRA LOW IGSS PA Search Results

    ULTRA LOW IGSS PA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LOW IGSS PA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4119

    Abstract: 2N4117 FN4117 2N4117A 2N4118 2N4118A 2N4119A LS4117 igss jfet "low reverse current"
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		PDF LS4117, 2N4117) 2N4117A FN4117/A 2N4119 2N4117 FN4117 2N4118 2N4118A 2N4119A LS4117 igss jfet "low reverse current"

    IRFP2907

    Abstract: bare Die mosfet IRFP2907 Application Notes IRFC2907B
    Text: PD - 93777 IRFC2907B HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack* l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V BR DSS RDS(on)* VGS(th) IDSS IGSS


    Original     		PDF IRFC2907B 200nA IRFP2907 bare Die mosfet IRFP2907 Application Notes IRFC2907B

    amelco

    Abstract: No abstract text available
    Text: 2N and SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<600 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117 A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V


    Original     		PDF 2N4117) 2N4117 300mW OT-23 2N4118 2N4117/A 2N4119 UNITS100 25-year-old, amelco

    Low Capacitance MOS FET

    Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
    Text: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description


    Original     		PDF XP135A1145SR XP135A1145SR Vds10V Low Capacitance MOS FET Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET P Channel Ultra Low Gate Charge

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV40UN TrenchMOS ultra low level FET Rev. 01 — 05 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:


    Original     		PDF PMV40UN PMV40UN

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV30UN µTrenchMOS ultra low level FET Rev. 01 — 25 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:


    Original     		PDF PMV30UN PMV30UN

    ultra low power mosfet fast switching

    Abstract: E 72873 40N60SCD1 MOSFET and parallel Schottky diode Anti parallel IF-25
    Text: IXKF 40N60SCD1 ID25 VDSS RDSon trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data E 72873 Features MOSFET T Symbol Conditions VDSS TVJ = 25°C to 150°C


    Original     		PDF 40N60SCD1 ultra low power mosfet fast switching E 72873 40N60SCD1 MOSFET and parallel Schottky diode Anti parallel IF-25

    Untitled

    Abstract: No abstract text available
    Text: IXKF 40N60SCD1 COOLMOS * Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol


    Original     		PDF 40N60SCD1

    Untitled

    Abstract: No abstract text available
    Text: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol Conditions


    Original     		PDF 40N60SCD1

    Untitled

    Abstract: No abstract text available
    Text: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 2 Features MOSFET T Symbol Conditions


    Original     		PDF 40N60SCD1

    XP151A11B0MR

    Abstract: No abstract text available
    Text: XP151A11B0MR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description ■ ● ● ● ● Applications


    Original     		PDF XP151A11B0MR XP151A11B0MR 250/W,

    XP131A0232SR

    Abstract: No abstract text available
    Text: XP131A0232SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.032Ω MAX Ultra High-Speed Switching SOP-8 Package • ● ● ● ● Applications Notebook PCs Cellular and portable phones On-board power supplies


    Original     		PDF XP131A0232SR XP131A0232SR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3439KDW N channel+P Channel MOSFET FEATURE z Surface Mount Package z Low RDS on z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K


    Original     		PDF OT-363 CJ3439KDW CJ3134K CJ3139K OT-363 -200mA

    XP134A11A1SR

    Abstract: No abstract text available
    Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP134A11A1SR XP134A11A1SR

    semelab mosfet

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET SML6609ASMD05 • Electrically Isolated and Hermetically Sealed Surface Mount Package Ultra Low On State Resistance Fast Switching Low Gate Charge Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated


    Original     		PDF SML6609ASMD05 SMD05 O-276AA) semelab mosfet

    XP161A11A1PR

    Abstract: sot 89 MOS FET
    Text: XP161A11A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A11A1PR is a N-Channel Power MOS FET with low on-state


    Original     		PDF XP161A11A1PR OT-89 XP161A11A1PR sot 89 MOS FET

    XP132A1365SR

    Abstract: XP132A1635SR
    Text: XP132A1635SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.033 Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones


    Original     		PDF XP132A1635SR XP132A1365SR XP132A1635SR

    XP131A1520SR

    Abstract: 362 N MOSFET
    Text: XP131A1520SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.02Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones


    Original     		PDF XP131A1520SR XP131A1520SR 362 N MOSFET

    XP131A1235SR

    Abstract: No abstract text available
    Text: XP131A1235SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.035Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones


    Original     		PDF XP131A1235SR XP131A1235SR

    XP161A0390PR

    Abstract: No abstract text available
    Text: XP161A0390PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.09Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A0390PR is a N-Channel Power MOS FET with low on-state


    Original     		PDF XP161A0390PR OT-89 XP161A0390PR OT-89

    XP132A11A1SR

    Abstract: No abstract text available
    Text: XP132A11A1SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.11Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones


    Original     		PDF XP132A11A1SR XP132A11A1SR

    RG 2006 10A 600V

    Abstract: LMOS APT20N60CC3 TF114
    Text: APT20N60CC3 600V 14A Super Junction MOSFET 0.210Ω TO-254 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-254 Package D G S MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified.


    Original     		PDF APT20N60CC3 O-254 O-254 RG 2006 10A 600V LMOS APT20N60CC3 TF114

    XP151A13A0MR

    Abstract: No abstract text available
    Text: XP151A13A0MR ◆ ◆ ◆ ◆ ◆ ◆ N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description Power MOS FET ■ ● ● ● ● Applications


    Original     		PDF XP151A13A0MR XP151A13A0MR 250/W,

    2N6568

    Abstract: Crystalonics TELEDYNE CRYSTALONICS teledyne transistor
    Text: ULTRA LOW Ro n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 4 5 6 , PG. 59 • LOW Rds - TA Ohms MAXIMUM • HIGH l DSS- 5 0 0 mA MINIMUM ELECTRICAL DATA A B S O LU TE M A X IM U M R A T IN G S PAR A M E TE R SYM BOL


    OCR Scan     		PDF lDSS-500 2N6568 2N6568 Leaka10V, Crystalonics TELEDYNE CRYSTALONICS teledyne transistor