Untitled
Abstract: No abstract text available
Text: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234G – OCTOBER 1995 – REVISED NOVEMBER 1999 D D D D D EPIC Enhanced-Performance Implanted CMOS Process Operating Range 2-V to 5.5-V VCC Unbuffered Outputs Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per
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SN54AHCU04,
SN74AHCU04
SCLS234G
MIL-STD-883,
SN54AHCU04
SN74AHCU04
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin
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240PIN
64Mx8
TS128MLQ64V6J
TS128MLQ64V6J
64bits
DDR2-667
16pcs
64Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
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240PIN
512MB
64Mx8
TS64MLQ64V8J
TS64MLQ64V8J
64bits
DDR2-800
64Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs
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144PIN
PC133
256MB
16MX16
TS32MSS64V6G
32Mx64
TS32MSS64V6G
JEP-108E
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Untitled
Abstract: No abstract text available
Text: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil
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184PIN
DDR333
1024MB
64Mx8
TS128MLD64V3J
TS128MLD64V3J
64Mx64bits
DDR333.
16pcs
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin
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240PIN
64Mx8
TS128MLQ64V8J
TS128MLQ64V8J
64bits
DDR2-800
16pcs
64Mx8bits
240-pin
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Untitled
Abstract: No abstract text available
Text: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234K – OCTOBER 1995 – REVISED JULY 2003 D Operating Range 2-V to 5.5-V VCC Unbuffered Outputs Latch-Up Performance Exceeds 250 mA Per JESD 17 13 3 12 4 11 5 10 6 9 7 8 1Y 2A 2Y 3A 3Y 14 1Y 1A NC VCC 6A 1 SN54AHCU04 . . . FK PACKAGE
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SN54AHCU04,
SN74AHCU04
SCLS234K
000-V
A114-A)
A115-A)
SN54AHCU04
AHCU04
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory
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AMP366P1623BTE-C75/H
AMP366P1623BTE-C75/H
400mil
168-pin
168-pin6
100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
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NL27WZU04DFT2G
Abstract: NLV27WZU04DFT2G NL27WZU04DTT1G
Text: NL27WZU04 Dual Unbuffered Inverter The NL27WZU04 is a high performance dual unbuffered inverter operating from a 1.65 to 5.5 V supply. These devices are well suited for use as oscillators, pulse shapers, and in many other applications requiring a high−input impedance amplifier. For digital applications,
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NL27WZU04
NL27WZ04
SC-88/SOT-363/SC-70
NL27WZU04/D
NL27WZU04DFT2G
NLV27WZU04DFT2G
NL27WZU04DTT1G
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Untitled
Abstract: No abstract text available
Text: 74LVC1GU04 Inverter Rev. 11 — 2 July 2012 Product data sheet 1. General description The 74LVC1GU04 provides the inverting single state unbuffered function. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.
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74LVC1GU04
74LVC1GU04
JESD22-A114F
JESD22-A115-A
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Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
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M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
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A115-A
Abstract: C101 SN74AHC1GU04 SN74AHC1GU04DBVR SN74AHC1GU04DCKR
Text: SN74AHC1GU04 SINGLE INVERTER GATE SCLS343Q− APRIL 1996 − REVISED JUNE 2005 D Operating Range 2-V to 5.5-V VCC D Unbuffered Output D Latch-Up Performance Exceeds 250 mA Per D ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model A114-A − 200-V Machine Model (A115-A)
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SN74AHC1GU04
SCLS343Q-
000-V
A114-A)
A115-A)
SN74AHC1GU04
A115-A
C101
SN74AHC1GU04DBVR
SN74AHC1GU04DCKR
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M368L1624DTL
Abstract: No abstract text available
Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L1624DTL
184pin
128MB
16Mx64
16Mx16
64-bit
M368L1624DTL
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M366S6453DTS
Abstract: No abstract text available
Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S6453DTS
PC133/PC100
M366S6453DTS
64Mx64
32Mx8,
400mil
168-pin
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M366S0924ETS-C7A
Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002
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128MB,
256MB
168pin
128Mb
62/72-bit
M366S0924ETS-C7A
M366S1723ETS-C7A
M366S1723ETU-C7A
M366S3323ETS-C7A
M366S3323ETU-C7A
M374S1723ETS-C7A
M374S1723ETU-C7A
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K4S560832E
Abstract: K4S561632E
Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004
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128MB,
256MB,
512MB
144pin
256Mb
64-bit
K4S560832E
K4S561632E
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DDR2-667
Abstract: PC2-5300 SSTL-18
Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:
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NT256T64UH4A1FY
256MB:
240pin
32Mx16
240-pin
32Mx64
84-ball
DDR2-667
PC2-5300
SSTL-18
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NT512T64U88A0BY-37B
Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
Text: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module
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NT512T64U88A0F
NT512T64U88A0B
NT512T64U88A0BY
NT1GT64U8HA0F
NT1GT64U8HA0B
NT1GT64U8HA0BY
512MB:
240pin
64Mx8
240-pin
NT512T64U88A0BY-37B
NT512T64U88A0BY-5A
NT1GT64U8HA0BY-37B
PC2-3200
SSTL-18
4E543147543634553848413042592D35412020
NT512T64U88A
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M374S6453CTS
Abstract: No abstract text available
Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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PC133/PC100
M374S6453CTS
M374S6453CTS
64Mx72
32Mx8,
400mil
168-pin
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M378T2953CZ3
Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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256MB,
512MB,
240pin
512Mb
64/72-bit
32Mx64
M378T3354CZ3
M378T3354CZ0
K4T51163QC
M378T2953CZ3
1GB DDR2 4 banks
DDR2 SDRAM ECC
dm 533
M378T6553CZ0
K4T5108
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K4H560838E
Abstract: DDR333
Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003
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256MB,
512MB
184pin
256Mb
64/72-bit
K4H560838E
DDR333
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Untitled
Abstract: No abstract text available
Text: SN54AHCU04, SN74AHCU04 HEX INVERTERS SCLS234A - OCTOBER 1995 - REVISED MARCH 1996 SN54AHCU04 . . . J OR W PACKAGE SN74AHCU04. . . D, DB, N OR PW PACKAGE TOP VIEW Operating Range 2-V to 5.5-V V^c EPIC (Enhanced-Performance Implanted CMOS) Process Unbuffered Outputs
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SN54AHCU04,
SN74AHCU04
SCLS234A
JESD-17
MIL-STD-883C,
300-mil
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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MC-454CB646
64-BIT
MC-454CB646
uPD4564163
MC-454CB646-A80
MC-454C
B646-A10
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