GSH912-12
Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Text: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier
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GSH912
1200um
12GHz
GSH912
100MHz
GSH912-12
RG03
GSH912-00
angS12
0841
MAG-S11
unmatched bare amplifier
179-14
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2060025D
CMP2060025D
CMPA20
CMPA2060025D
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CMPA2060025D
Abstract: No abstract text available
Text: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2060025D
CMP2060025D
CMPA20
CMPA2060025D
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GSP7427-00
Abstract: C 2120 Y unmatched bare amplifier
Text: GSP7427-00 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-00 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order
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GSP7427-00
GSP7427-00
100MHz
C 2120 Y
unmatched bare amplifier
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2160 transistor
Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
Text: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order
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GSP7427-89
GSP7427-89
100MHz
150mA
2160 transistor
GSP7427
RO4003
C 2120 Y
unmatched bare amplifier
W-335
L381
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CGH40025P
Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors
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MHW6181
Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Text: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1
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SPSSG1009/D
MBC13720,
MBC13916
MRF1535T1,
MRF1550T1
MRF373A,
MRF373AS,
MRF374A,
MRF372
MRF9002R1,
MHW6181
MRF151G
MRF9135LS
MRF455 APPLICATION NOTES
amplifier mrf247
MRF247
MRF171A
MRF21180
MRF374A
MRF428
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Solar Charge Controller Circuit PWM
Abstract: Solar Charge Controller PWM solar array shunt regulator military passive component Solar Charge Controller driver circuits military switch Solar Charge Controller Circuit Microwave PIN diode PWM Solar Charge Controller solar shunt regulator
Text: HIGH RELIABILITY discretes & modules R more than solutions - enabling possibilities Microsemi TM Meet the Industry's of High Reliability Devices Microsemi, already a world leader in military/aerospace discrete semiconductor products, has rallied its forces to create an even stronger source of high reliability military and aerospace discrete
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Untitled
Abstract: No abstract text available
Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB
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RF3930D
DS110406
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RF3930D
Abstract: RF3930
Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB
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RF3930D
RF3930D
DS110406
RF3930
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Untitled
Abstract: No abstract text available
Text: MX-LN series 1550 nm band Intensity Modulators Delivering Modulation Solutions Modulator The MX-LN series are lithium niobate LiNb03 intensity modulators designed for optical communications at data rates up to 44 Gb/s. The X-cut design of this Mach-Zehnder modulators confer them an
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LiNb03)
09-2014-V3,
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Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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Amplifier 10W bluetooth
Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die
Text: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 19dB at 2GHz 48V Typical Performance Output Power: 16W at P3dB Drain Efficiency: 70% at P3dB
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RF3930D
RF3930D
DS130412
Amplifier 10W bluetooth
DS1304
RFMD HEMT GaN SiC
Gan hemt transistor RFMD
ejector
3930D
SiC diode die
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Untitled
Abstract: No abstract text available
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110719
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Untitled
Abstract: No abstract text available
Text: RFHA1101 RFHA1101 4.3W GaN On SiC Power Amplifier Die-On-Carrier The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband
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RFHA1101
RFHA1101
36dBm
DS131023
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Untitled
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1101D RFHA1101D 4.3W GaN on SiC Power Amplifier Die Package: Die The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical,
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RFHA1101D
RFHA1101D
36dBm
DS131025
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Untitled
Abstract: No abstract text available
Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110630
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RFHA
Abstract: RFHA1101
Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
RFHA1101
DS110719
RFHA
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Untitled
Abstract: No abstract text available
Text: RF3930D RF3930D 10W GaN on SiC Power Amplifier Die Package: Die The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general
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RF3930D
RF3930D
42dBm
DS130906
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Untitled
Abstract: No abstract text available
Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB
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RF3931D
96mmx1
33mmx0
DS110520
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Untitled
Abstract: No abstract text available
Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features Broadband Operation DC-4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged Performance
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RF3934D
96mmx4
57mmx0
DS110520
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Untitled
Abstract: No abstract text available
Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB
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RF3932D
96mmx1
92mmx0
RF3932D
DS110520
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Untitled
Abstract: No abstract text available
Text: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general
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RF3933D
RF3933D
DS130906
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