UN1119
Abstract: UN221N UNR1119 UNR221N XP04286
Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1
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XP04286
UNR221N
UN221N)
UNR1119
UN1119)
UN1119
UN221N
XP04286
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UN1119
Abstract: UNR1119 XP01119 XP1119
Text: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1119(UN1119) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01119
XP1119)
UNR1119
UN1119)
UN1119
XP01119
XP1119
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UN1119
Abstract: UNR1119 XN01119 XN1119
Text: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1119(UN1119) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01119
XN1119)
UNR1119
UN1119)
UN1119
XN01119
XN1119
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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2002/95/EC)
UP04387
UNR1119
UNR1213
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UN1119
Abstract: UNR1119 XP01119 XP1119
Text: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP01119
XP1119)
UNR1119
UN1119)
UN1119
XP01119
XP1119
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PDF
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UP04387
Abstract: UNR1119 UNR1213
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)
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2002/95/EC)
UP04387
UP04387
UNR1119
UNR1213
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1119
Abstract: UNR1119 XN01119 XN1119
Text: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 (0.65) 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element
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XN01119
XN1119)
UNR1119
UN1119)
UN1119
XN01119
XN1119
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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2002/95/EC)
UP04387
UNR1119
UNR1213
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common collector PNP
Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
common collector PNP
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
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UP04387
Abstract: UNR1119 UNR1213
Text: Composite Transistors UP04387 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)
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UP04387
UP04387
UNR1119
UNR1213
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UNR1111
Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
B 47k 1112
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1117 S Transistor
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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