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UT20N03L Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD UT20N03 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ FEAT U RES * RDS ON = 20m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified ̈ SY M BOL 2.Drain 1.Gate 3.Source	Original	PDF	UT20N03 UT20N03L-TN3-R UT20N03G-TN3-R O-252 UT20N03L-TN3-T UT20N03G-TN3-T UT20N03L-K08-5060-R UT20N03G-K08-5060-R QW-R502-139 UT20N03L
UT20n03 Abstract: ut20n03l UT20 Text: UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 20mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT20N03L	Original	PDF	UT20N03 UT20N03L UT20N03-TN3-R UT20N03L-TN3-R UT20N03-TN3-T UT20N03L-TN3-T O-252 QW-R502-139 UT20n03 ut20n03l UT20
5a6 diode Abstract: UT20N03L Text: UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS ON < 20mΩ @ VGS=10V, ID =15A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1.Gate 3.Source	Original	PDF	UT20N03 UT20N03L-TN3-R UT20N03G-TN3-R O-252 UT20N03G-K08-5060-R QW-R502-139 5a6 diode UT20N03L
UT20N03L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT20N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 20mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source	Original	PDF	UT20N03 UT20N03L-TN3-R UT20N03G-TN3-R O-252 UT20N03L-TN3-T UT20N03G-TN3-T UT20N03L-K08-5060-R UT20N03G-K08-5060-R QW-R502-at UT20N03L