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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 40mΩ @VGS =-10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 SYMBOL 2.Drain TO-252


    Original     		UT30P03 O-252 UT30P03L-TN3-R UT30P03G-TN3-R QW-R502-335 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  FEATURES * RDS ON < 40mΩ @ VGS=-10V, ID =-10A RDS(ON) < 60mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified


    Original     		UT30P03 O-252 UT30P03L-TN3-T UT30P03L-TN3-R UT30P03G-TN3-T UT30P03G-TN3-R QW-R502-335 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 40mΩ @VGS =-10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified * Halogen Free „ 1 SYMBOL


    Original     		UT30P03 O-252 UT30P03G-TN3-R QW-R502-335 PDF