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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT4800 UT4800 UT4800L-S08-R UT4800G-S08-R UT4800L-S08-T UT4800G-S08-T QW-R105-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT4800 UT4800 UT4800G-S08-R QW-R105-001 PDF

    ut4800-s08-r

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT4800 UT4800 UT4800L UT4800-S08-R UT4800L-S08-R UT4800-S08-T UT4800L-S08-T QW-R502-174 ut4800-s08-r PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT4800 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original
    UT4800 UT4800 UT4800L-S08-R UT4800G-S08-R UT4800L-S08-T UT4800G-S08-T QW-R105-001 PDF