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    UT70 Search Results

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    UT70 Price and Stock

    Attend Technology Inc 119A-NUT-70-R02

    NUT, H=4.6MM
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    DigiKey 119A-NUT-70-R02 Digi-Reel 2,647 1
    • 1 $0.46
    • 10 $0.371
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    119A-NUT-70-R02 Cut Tape 2,647 1
    • 1 $0.46
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    • 100 $0.3027
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    119A-NUT-70-R02 Reel 1,800 900
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    TME 119A-NUT-70-R02 292 1
    • 1 $1.05
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    NAC 119A-NUT-70-R02 Reel 900
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    STMicroelectronics BUT70W

    TRANS NPN 125V 32A TO-247-3
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    DigiKey BUT70W Tube 600
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    Newark BUT70W Bulk 600
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    Avnet Silica BUT70W 143 Weeks 600
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    Vyrian BUT70W 119
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    Digi International Inc XBP9B-XCUT-701

    RF TXRX MODULE THROUGH HOLE
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    Bopla BCD-400-UT-7035

    BOX ABS GRAY 15.75"L X 13.31"W
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    DigiKey BCD-400-UT-7035 Bulk 1
    • 1 $83.38
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    Bopla BCD-250-UT-7035

    BOX ABS GRAY 10.24"L X 8.98"W
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    DigiKey BCD-250-UT-7035 Bulk 1
    • 1 $65.15
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    Find more UT70 price and stock on Findchips.com

    UT70 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UT70 Willow Technologies Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy Original PDF

    UT70 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ 1 DESCRIPTION TO-220 The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P03 O-220 UT70P03 O-252 UT70P03L-TA3-T UT70P03G-TA3-T UT70P03L-TN3-R UT70P03G-TN3-R QW-R502-210 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ 1 DESCRIPTION TO-220 The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P03 O-220 UT70P03 O-252 UT70P03L-TA3-T UT70P03G-TA3-T UT70P03L-TN3-R UT70P03G-TN3-R QW-R502-210 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		UT70N03 UT70N03 UT70N03L-TN3-R UT70N03G-TN3-R O-252 QW-R502-269 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1 „ DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P03 O-220 UT70P03 O-220F O-252 UT70P03L-TA3-T UT70P03G-TA3-T UT70P03L-TF3-T UT70P03G-TF3-T UT70P03L-TN3-R PDF

    UT70P03

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P03 UT70P03 UT70P03L UT70P03-TN3-R UT70P03L-TN3-R UT70P03-TN3-T UT70P03L-TN3-T QW-R502-210 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P03 UT70P03 O-252 UT70P03L-TN3-R UT70P03G-TN3-R QW-R502-210 PDF

    pd107

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P02 Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UT70P02 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P02 UT70P02 UT70P02L UT70P02-TN3-R UT70P02L-TN3-R UT70P02-TN3-T UT70P02L-TN3-T QW-R502-209 pd107 PDF

    low threshold mosfet p-channel TO-220

    Abstract: ut70p03 UT70P03L-TM3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70P03 Power MOSFET 75A, 30V P-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UT70P03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT70P03 O-220 UT70P03 O-220F O-251 O-252 UT70P03L-TA3-T UT70P03G-TA3-T UT70P03L-TF3-T UT70P03G-TF3-T low threshold mosfet p-channel TO-220 UT70P03L-TM3-T PDF

    UT70

    Abstract: RD045 UT70N03
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		UT70N03 UT70N03 UT70N03L UT70N03G UT70N03-TN3-R UT70N03-TN3-T UT70N03L-TN3-R UT70N03L-TN3-T UT70N03G-TN3-R UT70N03t UT70 RD045 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT70N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT70N03 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		UT70N03 UT70N03 UT70N03L-TM3-T UT70N03G-TM3-T UT70N03L-TN3-T UT70N03G-TN3-T UT70N03L-TN3-R UT70N03G-TN3-R QW-R502-269 PDF

    UT700

    Abstract: Aeroflex reed solomon
    Text: Standard Products UT700 32-bit Fault-Tolerant SPARCTM V8/LEON 3FT Processor Preliminary Data Sheet November 19, 2013 INTRODUCTION The UT700 features a seven stage pipelined monolithic, highperformance, fault-tolerant SPARCTM V8/LEON 3FT Processor. L1 cache consists of 16kB for both instruction and


    Original     		UT700 32-bit MIL-STD-1553ime Aeroflex reed solomon PDF

    bd139 equivalent transistor

    Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
    Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION


    Original     		BLV862 AN98014 SCA57 bd139 equivalent transistor Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS PDF

    intensifier

    Abstract: arc furnace UT20 M6 DATASHEET ultra high voltage diode UT100 UT35 UT50 UT70 capacitor 1000 10T
    Text: UT Thicker Film Tubular type Non-Inductive Resistors for Ultra High Voltage, High Energy Ultra Voltage,High Frequncy Pulse,R & R-C Tank,High Energy. UT series to meet general set of requirements Ultra high voltage high energt at reasonable prices. And to be connection on M4, M6 . Corona Ring & Cap std. A wide range of R-Value & tolerance,


    Original     		800kV 300kV 000Megohms 11/2005A intensifier arc furnace UT20 M6 DATASHEET ultra high voltage diode UT100 UT35 UT50 UT70 capacitor 1000 10T PDF

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


    Original     		TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener PDF

    C 5387

    Abstract: D1034UK UT70-25
    Text: TetraFET D1034UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 400MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D1034UK 400MHz 24swg 21swg FT50-75 C 5387 D1034UK UT70-25 PDF

    2222 031 capacitor philips

    Abstract: BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D099 BLV861 UHF linear push-pull power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861


    Original     		M3D099 BLV861 SCA57 127047/00/05/pp12 2222 031 capacitor philips BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139 PDF

    blf861a

    Abstract: MLD513 transistor 2001 H1 sot540
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Product specification Supersedes data of 2000 Aug 04 2001 Feb 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861A FEATURES PINNING - SOT540A • High power gain


    Original     		M3D392 BLF861A BLF861A OT540A 613524/02/pp16 771-BLF861A MLD513 transistor 2001 H1 sot540 PDF

    bd139 equivalent

    Abstract: BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 blv861 linear handbook MGM734 860mhz rf amplifier circuit diagram
    Text: APPLICATION NOTE A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 AN98033 Philips Semiconductors A Broadband 100 W Push Pull Amplifier for Band IV & V TV Transmitters based on the BLV861 CONTENTS 1 INTRODUCTION 2 TRANSISTOR DESCRIPTION


    Original     		BLV861 AN98033 BLV861 SCA57 bd139 equivalent BLV862 ATC180R philips power transistor bd139 transistor DK ql AN98014 linear handbook MGM734 860mhz rf amplifier circuit diagram PDF

    C 5387

    Abstract: FT50-75 UT70 D1034UK UT85 UT85-15 UT70-25
    Text: TetraFET D1034UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 400MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O N


    Original     		D1034UK 400MHz 24swg 21swg FT50-75 C 5387 UT70 D1034UK UT85 UT85-15 UT70-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1034UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 400MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O N


    Original     		D1034UK 400MHz 24swg 21swg FT50-75 PDF

    bvc62

    Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum


    OCR Scan     		BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330 PDF

    C16dJ

    Abstract: smd transistor G18 smd transistor rc3 rogers 5880 BLF861 uhf tv power transistor 250 w smd L19 TRANSISTOR SMD w2 UT70-25 multilayer ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 Sep 02 Philips Sem iconductors 2000 Feb 18 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT54QA • High power gain PIN


    OCR Scan     		BLF861 OT540A SQT540A C16dJ smd transistor G18 smd transistor rc3 rogers 5880 BLF861 uhf tv power transistor 250 w smd L19 TRANSISTOR SMD w2 UT70-25 multilayer ceramic capacitor PDF

    Z3340

    Abstract: Stanford Telecom package ijpt
    Text: <£SLO S P r e l im in a r y P r o d u c t S p e c if ic a t io n Z3340 D u a l 64-TAP, 11 m c p s D i g it a l M a t c h e d F ilt e r FEATURES • Up to 22 MHz Sample Rate ■ Ternary Coefficient Values 0, ± 1 ■ Dual Filters for Q uadrature Channels


    OCR Scan     		Z3340 64-TAP, 68-Pin Z3340 DC-2629-00 Stanford Telecom package ijpt PDF

    Untitled

    Abstract: No abstract text available
    Text: SERIES RPC-1.85 Series RPC-1.85 Serie RPC-1.85 Rosenberger RPC-1.85 are 50 precision connectors with an outer diameter of 1.85 mm. They have been designed with excellent characteris­ tics over the full frequency range up to 65 GHz. Below 18 GHz electrical


    OCR Scan     		OS-50* 08K421-2W7CS UT-70 08S12L-000 08S12S-OOOS3 08S150010C 08K12L-000S3 08K12S-OOOS3 D-84526 PDF