410nm
Abstract: No abstract text available
Text: Tops 1 Power Violet LED OSV5XAT1C1E •Features Dimension Highest Luminous Flux Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications Money Detector ● UV-Curing ● Sensor light ● Photo-catalyst ● Other Lighting
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350mA
410nm
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led xeon
Abstract: UV led 405 nm peak wavelength
Text: Xeon 1 Power Violet LED OSV5XME1C1E •Features ■Outline Highest Luminous Flux ● Super Energy Efficiency ● Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications ● Photo-catalyst ● Other Lighting 3.5 Sensor light
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350mA
led xeon
UV led 405 nm peak wavelength
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L11938
Abstract: s11850
Text: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS
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L11729,
L11730
C10910
T11262-01,
T11722-01
L12004-2190H-C,
D-82211
DE128228814
L11938
s11850
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Hamamatsu S6337
Abstract: S1337-1010BQ S6337-01 SE-171 uv light PHOTO detector uv PHOTO detector
Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.
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S6337-01
S6337-01
SE-171
KSPD1029E01
Hamamatsu S6337
S1337-1010BQ
uv light PHOTO detector
uv PHOTO detector
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.
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S6337-01
S6337-01
SE-171
KSPD1029E01
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sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,
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VMN-MS6520-1012
sensor BPW34 application note
touch sensitive siren using transistor
tsop sensor
Infrared sensor TSOP 1738
vo2223
vo3120
infrared signal transmission distance sensor
BPW34 application note
APPLICATION NOTE BpW34
BP104 application note
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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spot light size photodiode
Abstract: S8382
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
S5930
S5931
SE-171
KMPD1018E04
spot light size photodiode
S8382
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
B1201,
KMPD1018E05
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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L9657
Abstract: S10604
Text: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium
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SE-17141
52/1A
RU-113054
L9657
S10604
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S10111
Abstract: No abstract text available
Text: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speciÝcally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area
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S10111
S10114
SE-171
KMPD1090E08
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PIN-040A
Abstract: osd15-5t OSD5.8-7Q OSD5-5T PIN-020A PIN-44DI OSD35-7Q SPOT-15-YAG OSD15-0 bpx65r
Text: YAG Series Nd:YAG Optimized Photodetectors The YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing low light intensities, such as the light reflected from objects illuminated by
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-013D,
UV-013
15OSD-5-0,
OSD15-0,
OSD15-5T
BPX-65R
BPX-65
UV-001,
UV-005,
PIN-040A
osd15-5t
OSD5.8-7Q
OSD5-5T
PIN-020A
PIN-44DI
OSD35-7Q
SPOT-15-YAG
OSD15-0
bpx65r
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Untitled
Abstract: No abstract text available
Text: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products
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uv detector
Abstract: uv sensors uv PHOTO detector 340nm
Text: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode
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2002/95/EC)
KPDU34PS1
600nm
340nm
0905/KPDU34PS1)
uv detector
uv sensors
uv PHOTO detector
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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P9696
Abstract: DETECTOR FLAME P3207-07 C1103-04 C3757-02 P4245 P4639 A3179 A3179-01 P9696-02
Text: PbSe photoconductive detectors P9696 series P3207-07 Infrared detectors with fast response and high sensitivity in 5 Njm wavelength band Compared to other detectors used in the same wavelength regions, PbSe photoconductive detectors have faster response and
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P9696
P3207-07
SE-171
KSPD1073E02
DETECTOR FLAME
P3207-07
C1103-04
C3757-02
P4245
P4639
A3179
A3179-01
P9696-02
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Untitled
Abstract: No abstract text available
Text: PbSe photoconductive detectors P9696 series P3207-07 Infrared detectors with fast response and high sensitivity in 5 Njm wavelength band Compared to other detectors used in the same wavelength regions, PbSe photoconductive detectors have faster response and
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P9696
P3207-07
SE-171
KSPD1073E02
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Untitled
Abstract: No abstract text available
Text: Two-color detectors K1713/K3413-01, -002 Wide spectral response range from UV through IR The K1713/K3413-01, -002 have a bi-level structure in which an infrared transmitting Si photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
B1201,
KIRD1029E07
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Photodiodes
Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera
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OCR Scan
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InSb spectral response
Abstract: X101 insb detector
Text: InAs/lnSb Photovoltaic Detectors Spectral Response Range: InAs 1 to 3.1 jim, InSb 1 to 5.5 jxm Photovoltaic detectors with high-speed response and low noise InAs detectors cover a wavelength range equivalent to that of PbS detectors, and that of PbSe detectors is covered by InSb detectors.
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long range metal detector
Abstract: InSb spectral response uv light PHOTO detector HSTTM metal detector diagram Dewar metal detector XP1200 metal detector diagram PI P5968-060
Text: InAs/lnSb Photovoltaic Detectors Spectral Response Range: InAs 1 to 3.1 urn. InSb 1 to 5.5 urn Photovoltaic detectors with high-speed response and low noise InAs detectors cover a w avelength ran g e equivalent to that of PbS detectors, and th at of PbSe d etec to rs is covered by InSb detectors.
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