ISO-13486
Abstract: UV-035DQC def07 UV-035DQ AQAP110 UV-100DQC UV-005DQ OSI Optoelectronics AQAP-1 UV-001D
Text: UV-DQ / DQC / DK SERIES new Planar Diffused UV Enhanced Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–DQ and UV–DQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity
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200-400nm
190nm.
320nm.
Sh4072
ISO-13486
UV-035DQC
def07
UV-035DQ
AQAP110
UV-100DQC
UV-005DQ
OSI Optoelectronics
AQAP-1
UV-001D
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opa 275
Abstract: opa 220 JEC0.1
Text: SiC - Photodiode JEC 0,3* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,22 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps
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opa 275
Abstract: JEC 200 JEC1C JEC 400 JEC1B 1bc2
Text: SiC - Photodiode JEC 1* characteristics : ♦ ♦ ♦ ♦ SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 1 mm2 TO 5-package applications : ♦ ♦ ♦ ♦ UV-measurement only control of sterilization lamps
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UV-005EQ
Abstract: UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC
Text: UV-EQ / EQC / EK SERIES new UV Enhanced, Suppressed NIR Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–EQ and UV–EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190 nm.
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200-400nm
320nm.
UV-035DC
UV-100DC
UV-035DQC
UV-100DQC
XUV-50C
XUV-100C
XUV-005
XUV-020
UV-005EQ
UV-035EQ
spectrophotometer
E152801
E14800
UV-001D
UV-013EQ
320nm
100-EC
UV-100EC
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opa 275
Abstract: photodiode flame JEC 400 340nm
Text: SiC - Photodiode JEC 0,1* characteristics : i i i i SiC-Photodiode with integrated filter *-filter option for UV-C, UV-BC, UV-B and UV-A active area 0,055 mm2 TO 5-package applications : i i i i UV-measurement only control of sterilization lamps flame detection
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uv photodiode, GaP
Abstract: No abstract text available
Text: SiC - quadrant-photodiode JQC 4 characteristics : ♦ ♦ ♦ ♦ ♦ spectral range active area separation gap high UV - response TO 39-package applications : ♦ ♦ ♦ UV-measurement only UV positioning application UV-source control 210 . 380 4x0,965
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39-package
curre491
uv photodiode, GaP
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .
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S1226-18BU,
S1336-18BU
S1226-18BU
S1336-18BU
SE-171
KSPD1037E02
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hamamatsu S1336
Abstract: S1336-18BU uv photodiode UV photodiodes 254 S1226-18BU SE-171 KrF excimer
Text: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .
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S1226-18BU,
S1336-18BU
S1226-18BU
S1336-18BU
S1226-18BU
SE-171
KSPD1037E02
hamamatsu S1336
uv photodiode
UV photodiodes 254
KrF excimer
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S1336-18BU
Abstract: S1226-18BU SE-171
Text: PHOTODIODE Si photodiode S1226-18BU, S1336-18BU For high power UV monitor, and UV to visible, precision photometry S1226-18BU and S1336-18BU are Si photodiodes encapsulated in a TO-18 package with a UV glass window. These photodiodes have high sensitivity from the UV to near infrared range and operate reliably when detecting high power UV radiation such as from mercury lamps .
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S1226-18BU,
S1336-18BU
S1226-18BU
S1336-18BU
S1226-18BU
SE-171
KSPD1037E01
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UV source led 254 nm peak
Abstract: G1126-02
Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1126-02
G1127-02
G2119
KGPD1005E02
UV source led 254 nm peak
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Untitled
Abstract: No abstract text available
Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1126-02
G1127-02
G2119
KGPD1005E02
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Untitled
Abstract: No abstract text available
Text: GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring UV-A Lamp Monitoring
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GUVA-S12SD
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photodiode flame
Abstract: No abstract text available
Text: SiC - photodiode JEC 1 IS characteristics : ♦ ♦ ♦ ♦ ♦ spectral range 210 . 380 active area 0,965 high UV-responsivity 0,16 TO 18-package photodiode isolated to package applications : ♦ ♦ ♦ UV-measurements only UV-source control flame detection
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18-package
photodiode flame
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G1126-02
Abstract: G1127-02 G2119 FA 8 600
Text: PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection • General ratings / Absolute maximum ratings
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G1126-02,
G1127-02,
G2119
G1126-02
G1127-02
SE-171
KGPD1005E01
G1126-02
G1127-02
G2119
FA 8 600
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Untitled
Abstract: No abstract text available
Text: GUVA-S12SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring UV-A Lamp Monitoring
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GUVA-S12SD
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GUVV-T10GD
Abstract: No abstract text available
Text: GUVV-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications Indium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation High Responsivity & Low Dark Current Full UV Band Monitoring UV-A Lamp Monitoring Sterilization Lamp Monitoring
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GUVV-T10GD
GUVV-T10GD
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G1127-02
Abstract: G1126-02 G2119
Text: PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection • General ratings / Absolute maximum ratings
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G1126-02,
G1127-02,
G2119
G1126-02
G1127-02
SE-171
KGPD1005E01
G1127-02
G1126-02
G2119
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udt UV100
Abstract: UV-20 UDT UV-35P UV-100L FIL-UV50 udt PIN UV 100 near IR photodiodes UV-005DC UV-035DC uv sensors
Text: UV ENHANCED SERIES INVERSION LAYERS AND PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS FEATURES • Pollution Monitoring • Medical Instrumentation • UV Exposure Meters • Spectroscopy • Water Purification • Fluorescence UDT Sensors offers two distinct families of UV enhanced silicon photodiodes.
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24/Ceramic
udt UV100
UV-20 UDT
UV-35P
UV-100L
FIL-UV50
udt PIN UV 100
near IR photodiodes
UV-005DC
UV-035DC
uv sensors
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centronic osd100 6
Abstract: Centronic OSD35-7CQ OSD100 OSD100-7 OSD35-7 6E-15 UV photodiodes OSD5.8-7
Text: Super UV photodetectors Super UV Detectors Series 7 Super UV Photodiodes are primarily designed for application in the 190-400 nm range where high shunt resistance and good sensitivity are needed. Detectors are available in a range of standard packages with a
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254nm
340nm
6e-15
OSD35-7
5e-14
OSD100-7
10x10
2e-14
centronic osd100 6
Centronic
OSD35-7CQ
OSD100
OSD100-7
OSD35-7
6E-15
UV photodiodes
OSD5.8-7
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uv photodiode for 254nm
Abstract: photodiode flame JEC ELECTRONICS JEC 400 Boston Electronics Corporation
Text: JEC 1 SHT SiC Photodiode CHARACTERISTICS Spectral range 210 to 380 nm Activity area 0.965 mm2 High UV-responsivity 0.16 A/W TO-18 package Suitable for operating temperatures up to 150°C APPLICATIONS UV measurement only UV source control for instance in sterilizers
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Untitled
Abstract: No abstract text available
Text: SiC - photodiode JEC 0,3S/JEC 0,3SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,22 0,13 nm mm2 A/W maximum ratings:
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18-package
04/0e
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uv photodiode for 254nm
Abstract: JEC ELECTRONICS UV diode 250 nm uv photodiode JEC 400 UV source 250 nm
Text: JEC 0.1 SHT SiC Photodiode CHARACTERISTICS Spectral range 210 to 380 nm Activity area 0.055 mm2 High UV-responsivity 0.13 A/W TO-18 package Suitable for operating temperatures up to 150°C APPLICATIONS UV measurement only UV source control Flame detection
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JEC1SS
Abstract: No abstract text available
Text: SiC - photodiode JEC 1S/JEC 1SS characteristics : ♦ ♦ ♦ ♦ spectral range active area high UV-responsivity TO 18-package applications : ♦ ♦ ♦ UV-measurement only UV-source control flame detection 210 . 380 0,965 0,13 nm mm2 A/W maximum ratings:
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18-package
JEC1SS
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MA 4E 1245
Abstract: No abstract text available
Text: SiC - photodiode JEC 4 characteristics : i i i i spectral range active area high UV - response TO 39-package applications : i i i UV-measurement only UV-source control for instance in sterilizers flamedetection 210 . 380 nm 4 mm2 150 mA/W maximum ratings:
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39-package
MA 4E 1245
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