SG01L-C
Abstract: silicon carbide TO-39, UVC
Text: UVC-selective SiC based UV sensor SG01L-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294
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SG01L-C
SG01L-C
silicon carbide
TO-39, UVC
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TO-39, UVC
Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
Text: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294
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SIC01L-5-C
TO-39, UVC
SIC01L-5-C
uvc photodiode
uv sensor
silicon carbide
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uv sensor
Abstract: silicon carbide
Text: UVC-selective SiC based UV sensor SG01S-C Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SG01S-C
uv sensor
silicon carbide
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SG01S-C18
Abstract: uv sensor silicon carbide SG01
Text: UVC-selective SiC based UV sensor SG01S-C18 Features • UVC Photodiode with small photoactive area • Optimally suited for detection and control of strong UVC radiation • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SG01S-C18
SG01S-C18
uv sensor
silicon carbide
SG01
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SG01S-HT
Abstract: uv sensor silicon carbide SG01S
Text: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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SG01S-HT
SG01S-HT
uv sensor
silicon carbide
SG01S
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SG01S-5
Abstract: silicon carbide SG01S
Text: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
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SG01S-5
SG01S-5
silicon carbide
SG01S
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uv photodiode
Abstract: uv sensor ultraviolet sensor datasheet AG28S uvb sensor uv sensor AG28S ultraviolet sensors AG38S-TO AG32S AG38S-SMD
Text: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN
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AG28S
in1093
AG38S-TO
uv photodiode
uv sensor
ultraviolet sensor datasheet
AG28S
uvb sensor
uv sensor AG28S
ultraviolet sensors
AG38S-TO
AG32S
AG38S-SMD
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SIC01S-HT
Abstract: silicon carbide UV photodiode
Text: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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SIC01S-HT
SIC01S-HT
silicon carbide
UV photodiode
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SG01M-C
Abstract: silicon carbide
Text: UVC-selective SiC based UV sensor SG01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SG01M-C
SG01M-C
silicon carbide
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uvc photodiode
Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
Text: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294
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SIC01M-C
uvc photodiode
uv sensor
SIC01M
silicon carbide
TO-39, UVC
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ultraviolet sensor
Abstract: AG28S uv sensor AG28S uvc photodiode
Text: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN
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AG28S
ultraviolet sensor
AG28S
uv sensor AG28S
uvc photodiode
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ultraviolet sensor
Abstract: TR15 uv sensor SG01S
Text: Ultraviolet selective SiC based UV sensor SG 01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01S
Abstract: uv sensor silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01S
SG01S
uv sensor
silicon carbide
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Untitled
Abstract: No abstract text available
Text: UV-Photodiodes EPD-280-0-0.3-L* Wavelength range Type Technology Case UVA - UVC UV glass with lens SiC TO-5 Description High spectral sensitivity by lens in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC 1,2 Responsivity 1 Applications Environmental technology, analytical techniques,
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EPD-280-0-0
380nm)
254nm
D-12555
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ultraviolet sensor
Abstract: silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01S-ISO Features • Two insulated pins • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01S-ISO
ultraviolet sensor
silicon carbide
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Untitled
Abstract: No abstract text available
Text: EPD-280-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVA - UVC UV glass SiC TO-5 / TO-18 Description High spectral sensitivity in the UVA-UVC range 220 nm - 380nm , low cost chip based on SiC, excellence stability on high irradiance Environmental
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EPD-280-0-0
380nm)
254nm
D-12555
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ceramo paste
Abstract: uv sensor ultraviolet sensor CO Sensor
Text: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
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Untitled
Abstract: No abstract text available
Text: EPD-270-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVC UV glass with filter SiC TO-5 / TO-18 Description High spectral sensitivity in the UVC range 230 nm - 285nm , low cost chip based on SiC 1,2 Applications Environmental technology, analytical techniques,
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EPD-270-0-0
285nm)
254nm
D-12555
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GUVB-S10GD
Abstract: AG32S
Text: Ultraviolet selective AlGaN based UV sensor GUVB-S10GD AG32S-SMD Features • UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible • Semiconductor material AlGaN • SMD package with quartz window
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GUVB-S10GD
AG32S-SMD)
Phot5211,
GUVB-S10GD
AG32S
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uv sensor
Abstract: ultraviolet sensor SUN SENSOR AG38S-SMD
Text: Ultraviolet selective GaN based UV sensor AG38S-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN
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AG38S-SMD
uv sensor
ultraviolet sensor
SUN SENSOR
AG38S-SMD
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uv sensor
Abstract: ultraviolet sensor SUN SENSOR uv photodiode
Text: Ultraviolet selective GaN based UV sensor GaN-UVA-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN
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silicon carbide
Abstract: No abstract text available
Text: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SG01L-5
S280nm
S400nm
silicon carbide
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uv photodiode SIC01L-18
Abstract: SIC01L-18 cree ultraviolet uv sensor
Text: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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SIC01L-18
S280nm
S400nm
uv photodiode SIC01L-18
SIC01L-18
cree ultraviolet
uv sensor
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uv photodiode
Abstract: AG38S-TO ultraviolet sensor
Text: Ultraviolet selective GaN based UV sensor AG38S-TO Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for UV consumer-applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN • TO-18 metal package with 0,076 mm2 active chip area
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AG38S-TO
076mm2
uv photodiode
AG38S-TO
ultraviolet sensor
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