"UHF Transistors"
Abstract: ZUMTQ31A DSA0037349
Text: SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTORS ZUMTQ31A ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL – T11 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO
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OT323
ZUMTQ31A
100MHz
60MHz
"UHF Transistors"
ZUMTQ31A
DSA0037349
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SOT323
Abstract: ZUMTS20 DSA003735
Text: SOT323 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 1 – DECEMBER 1998 ZUMTS20 ✪ PARTMARKING DETAIL — T3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO
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OT323
ZUMTS20
100MHz
SOT323
ZUMTS20
DSA003735
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SOT323-5L
Abstract: STLQ50 STLQ50XX25 sot323xl
Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output
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STLQ50XX
OT323-5L
OT323-5L
OT235L
STLQ50
OT323-xL
SOT323-5L
STLQ50XX25
sot323xl
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RESISTOR BF 0207
Abstract: STLQ50 STLQ50C50R
Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output
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STLQ50XX
OT323-5L
OT323-5L
OT235L
STLQ50
RESISTOR BF 0207
STLQ50C50R
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SOT323-5L
Abstract: STLQ50 STLQ50M25R STLQ50ADJ STLQ50M50R sot323xl 709 SOT23 OUTPUT 3.3V PACKAGE SOT323
Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output
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STLQ50XX
OT323-5L
OT323-5L
OT235L
STLQ50
OT323-xL
SOT323-5L
STLQ50M25R
STLQ50ADJ
STLQ50M50R
sot323xl
709 SOT23
OUTPUT 3.3V PACKAGE SOT323
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Untitled
Abstract: No abstract text available
Text: STLQ50XX 50 mA, 3 µA supply current low drop linear regulator Features • 2.3 V to 12 V input voltage range ■ 50 mA maximum output current ■ 3 µA quiescent current ■ Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and adjustable SOT323-5L ■ 200 mV dropout voltage at 25 mA output
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STLQ50XX
OT323-5L
OT323-5L
OT235L
STLQ50
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RF IC
Abstract: ZUMTS17 ZUMTS17H DSA003735
Text: SOT323 NPN SILICON PLANAR RF TRANSISTORS ZUMTS17 ZUMTS17H ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — ZUMTS17 - T4 ZUMTS17H - T4H ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 25 V V CEO 15
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OT323
ZUMTS17
ZUMTS17H
ZUMTS17
ZUMTS17H
500MHz
100mV
183MHz
200MHz
RF IC
DSA003735
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NPN CD100 transistor
Abstract: smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers
Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 3 Semiconductors AUGUST 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. PMGD8000LN 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 2. PBSS4350X, PBSS5350X, PBSS4250X
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PMGD8000LN
OT323
OT363
PBSS4350X,
PBSS5350X,
PBSS4250X
PBSS5250X
SC-62
PMEG1020EV
PMEG1020EA
NPN CD100 transistor
smd transistor a68
NPN CD100 transistor file
B80 smd diode
Schottky Diode SC-62
octal MOSFET ARRAY
smd transistor bq
automotive mosfet
SOT363 flash
N-Channel Microcontrollers
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PDF
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PMF370XN
Abstract: PMF280UN PMF290XN PMF400UN PMF780SN PMGD370XN PMGD400UN PMGD780SN PMGD8000LN SOT323 MOSFET P
Text: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT323 and SOT363 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers
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OT323
OT363
OT323
SC-70
SC-88
PMF370XN
PMF280UN
PMF290XN
PMF400UN
PMF780SN
PMGD370XN
PMGD400UN
PMGD780SN
PMGD8000LN
SOT323 MOSFET P
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clk sot363
Abstract: SOT323 MOSFET P dual sot363 PMGD780SN Philips 370 PMF280UN PMF290XN PMF370XN PMF400UN PMF780SN
Text: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT323 and SOT363 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers
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OT323
OT363
OT323
SC-70
SC-88
clk sot363
SOT323 MOSFET P
dual sot363
PMGD780SN
Philips 370
PMF280UN
PMF290XN
PMF370XN
PMF400UN
PMF780SN
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PDF
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SOT323 MOSFET P
Abstract: SOT363 MOSFET N sot323 dual sot363 PMF280UN PMF290XN PMF370XN PMF400UN NXP MOSFETs PMGD290XN
Text: 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient
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OT323
OT363
SOT323 MOSFET P
SOT363
MOSFET N sot323
dual sot363
PMF280UN
PMF290XN
PMF370XN
PMF400UN
NXP MOSFETs
PMGD290XN
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RC131
Abstract: No abstract text available
Text: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00057 FEATURES Seven Output Voltages: 5.0 V, 3.6 V, 3.3 V, 2.5 V, 1.8 V, 1.2 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage
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ADP1829,
APD210X
ADP171X
ADP171X
RC131
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CC21 CAPACITOR
Abstract: No abstract text available
Text: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00059 FEATURES Seven Output Voltages: 3.6 V, 3.3 V,3.3l V 2.5 V, 1.8 V, 1.25 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage
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ADP1829,
APD210X
ADP171X
ADP171X
CC21 CAPACITOR
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LBC807WT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors 3 COLLECTOR 1 BASE LBC807WT1 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50 V Emitter–Base Voltage V –5.0 V –500
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LBC807WT1
/SC-70
LBC807WT1
SC-70
OT-323
LBC807WT1-3/3
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Si1305DL
Abstract: Si1305DL-T1
Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT
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Si1305DL
OT-323
SC-70
Si1305DL--T1
Si1305DL--T1--E3
08-Apr-05
Si1305DL-T1
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g4002
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A I L - T5 SO T 32 3 ABSOLUTE M A X IM U M RATINGS. SYM BOL PARAM ETER V A LU E U N IT V C BO 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO
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OCR Scan
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OT323
60MHz,
g4002
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e
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OCR Scan
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OT323
100jj
15KHz
ZUMT5179
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 - DECEMBER 1998 Q_ PARTM ARKING DETAIL — T3 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e VcBO 30 V V C o lle c to r-E m itte r V o lta g e
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OCR Scan
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OT323
ZUMTS20
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PDF
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Untitled
Abstract: No abstract text available
Text: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. SVCBO b v ceo W m * b v EBO (V) . •CBO • VCB (V) <lC ES (nA) MIN MAX o es . e (V) (V) MIN General Purpose Amplifier/Switches v c e (s a t ) e v CE (mA) MAX
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OCR Scan
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OT-23
350mW
CMPTB099
CMPT930
CMPT2222A
CMPT3904
CMPT4401
OT-323
250mW
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PDF
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Untitled
Abstract: No abstract text available
Text: SÌ1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY V d s (V) Id (A) ^D S (o n) ( ß ) 0.430 @ VQS = -4 .5 V -2 0 ± 0 .7 2 0.480 @ V q S = -3 .6 V ± 0 .6 8 ESD Protected 0.700 9 V GS = -2 .5 V ± 0 .5 6 3000 V SOT-323 SC-70 (3-LEADS)
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OCR Scan
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1303EDL
OT-323
SC-70
S-99400--
29-Nov-99
29-Nov-99
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PDF
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GS 069 LF
Abstract: No abstract text available
Text: SM307EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V DS(V) 0.290 @ V g s = -1 2 I d (A) rDS(on) (ß ) -5 V ±0.91 V ± 0 .7 4 ESD Protected 0.580 @ V qs = -1 -8 V ± 0 .6 4 3000 V 0.435 @ VQS = -2 .5 SOT-323 SC-70 (3-LEADS) X X LF YY Marking Code
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OCR Scan
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SM307EDL
OT-323
SC-70
S-99405--
29-Nov-99
1307EDL
GS 069 LF
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PDF
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SM305
Abstract: No abstract text available
Text: SM 305_ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V ) -8 •d ( A ) r D S {o n ) ( & ) 0.280 @ VGS = -4 .5 V ± 0 .9 2 0.380 @ V 6S = -2 .5 V ± 0 .7 9 0.530 @ V Gs = -1 -8 V ± 0 .6 7 \* A SOT-323 SC-70 (3-LEADS)
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OCR Scan
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OT-323
SC-70
S-63638--
01-Nov-99
SM305
SM305
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PDF
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W18 sot23
Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
Text: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA
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OCR Scan
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050I3)
OT143
OT323
OT343
BFR92AW
BFR93AW
BFS17AW
S852TW
BFR181TW
BFR182TW
W18 sot23
ic w83
SOT343R
bfp280tw
SOT-343
BFP181TW
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PDF
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diode ds 10-100 s
Abstract: "MARKING CODE LE"
Text: SÌ1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY r D S (o n) ( ß ) Ip (A) 0.280 @ V qs * -4 -5 V ± 0 .9 2 V d s (V) -8 0.380 @ VGS = —2.5 V ± 0 .7 9 ESD Protected 0.530 @ VGS = -1 .8 ± 0 .6 7 3000 V V SOT-323 SC-70 (3-LEADS) YY
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OCR Scan
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1305EDL
OT-323
SC-70
S-99399--
29-Nov-99
diode ds 10-100 s
"MARKING CODE LE"
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