MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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DF2B5M4ASL
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Toshiba Electronic Devices & Storage Corporation
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) |
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DF2B6M4ASL
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Toshiba Electronic Devices & Storage Corporation
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) |
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DF2B5PCT
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Toshiba Electronic Devices & Storage Corporation
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TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) |
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DF2B7PCT
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Toshiba Electronic Devices & Storage Corporation
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TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) |
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