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    VBE 10V, ICE 4A Search Results

    VBE 10V, ICE 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    VBE 10V, ICE 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN POWER TRANSISTOR 2SD1878

    Abstract: 2SD1878 EQUIVALENT 2SD1878
    Text: 2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF 2SD1878 16KHz 100mA NPN POWER TRANSISTOR 2SD1878 2SD1878 EQUIVALENT 2SD1878

    2sd1911

    Abstract: No abstract text available
    Text: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF 2SD1911 16KHz 2sd1911

    2SD2498

    Abstract: No abstract text available
    Text: Silicon Diffused Power Transistor 2SD2498 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,primarily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM


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    PDF 2SD2498 16KHz 2SD2498

    2SD870

    Abstract: 2sd870 transistor transistor 2sd870
    Text: SILICON DIFFUSED POWER TRANSISTOR 2SD870 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3 QUICK REFERENCE DATA


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    PDF 2SD870 16KHz 100mA 2SD870 2sd870 transistor transistor 2sd870

    2sd1878

    Abstract: 2SD1878 EQUIVALENT NPN POWER TRANSISTOR 2SD1878 2SD1878 Transistor data transistor 2sd1878
    Text: 2SD1878 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF 2SD1878 16KHz 100mA 2sd1878 2SD1878 EQUIVALENT NPN POWER TRANSISTOR 2SD1878 2SD1878 Transistor data transistor 2sd1878

    100V 60A Diode

    Abstract: 2SD1886 vbe 10v, Ice 4A
    Text: 2SD1886 SILICON DIFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope ,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO


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    PDF 2SD1886 16KHz 100mA 16KHz 100V 60A Diode 2SD1886 vbe 10v, Ice 4A

    TRANSISTOR 2SD1879

    Abstract: 2SD1879 2SD187
    Text: 2SD1879 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF 2SD1879 16KHz MA100mA TRANSISTOR 2SD1879 2SD1879 2SD187

    2SD1911

    Abstract: 40af
    Text: Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF 2SD1911 16KHz 2SD1911 40af

    TRANSISTOR 2SD1879

    Abstract: 2SD1879
    Text: 2SD1879 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA


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    PDF 2SD1879 16KHz 100mA TRANSISTOR 2SD1879 2SD1879

    transistor 2sd2499

    Abstract: 2SD2499 08af 2SD2499 equivalent
    Text: 2SD2499 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3PM


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    PDF 2SD2499 150urrent transistor 2sd2499 2SD2499 08af 2SD2499 equivalent

    Untitled

    Abstract: No abstract text available
    Text: DZT953 N EW PRODU CT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941

    DZT853

    Abstract: DZT953 DZT953-13 J-STD-020D
    Text: DZT953 NEW P PRO RO DUCT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes


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    PDF DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941 DZT853 DZT953 DZT953-13 J-STD-020D

    4A SOT223 MARKING CODE

    Abstract: NPN 1A 100V SOT-223
    Text: NOT RECOMMENDED FOR NEW DESIGN USE ZXTP2013G DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF ZXTP2013G DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941 4A SOT223 MARKING CODE NPN 1A 100V SOT-223

    DZT853

    Abstract: DZT953 IPC-SM-782
    Text: SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DZT853 DZT953) OT-223 J-STD-020C MIL-STD-202, DS30737 DZT853 DZT953 IPC-SM-782

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODELS: DZT853 DZT853 NEW PRODUCT NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT953 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DZT853 DZT953) OT-223 J-STD-020C MIL-STD-202, DS30737

    4A SOT223 MARKING CODE

    Abstract: DZT953 NPN 1A 100V SOT-223
    Text: DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DZT953 DZT853) OT-223 OT-223 J-STD-020C MIL-STD-202, DS30941 4A SOT223 MARKING CODE DZT953 NPN 1A 100V SOT-223

    DZT953

    Abstract: marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223
    Text: SPICE MODELS: DZT953 DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF DZT953 DZT853) OT-223 J-STD-020C MIL-STD-202, DS30941 DZT953 marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223

    ZTX853

    Abstract: C 3298 TRANSISTOR
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.


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    PDF ZTX853 ZTX853 C 3298 TRANSISTOR

    C45H5

    Abstract: C44H11 C44H C44H8 C45H C45H11 C45H8
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS C44H 5, 8, 11 NPN C45H 5, 8, 11 (PNP) TO - 220 Plastic Package Application General purpose power amplification & switching such as output or driver stages


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    PDF C44H5 C45H5 C-120 45H1Rev210701 C45H5 C44H11 C44H C44H8 C45H C45H11 C45H8

    C44H11

    Abstract: C45H5 C45H8 C44H8 C44H C45H C45H11
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS C44H 5, 8, 11 NPN C45H 5, 8, 11 (PNP) TO - 220 Application General purpose power amplification & switching such as output or driver


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    PDF C44H5 C45H5 C-120 45H1Rev210701 C44H11 C45H5 C45H8 C44H8 C44H C45H C45H11

    FZT948

    Abstract: FZT949 DSA003718
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2- NOVEMBER m 1995 FEATURES * Extremely low equivalent * 6 Amps continuous current on-resistance; RCE{W) * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFEcharacteristics specified upto 20 Amps


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    PDF OT223 FZT949 FZT948 Tamm25 FZT948 FZT949 DSA003718

    bu126

    Abstract: Switched Mode Power Supply
    Text: TOSHIBA {DISCRETE/OPTO} ~5h D E ^ I D ^ a S O 000flCH3 WÊÊÊÊÊÊÊÊÊÊÊtÊÊÊÊIÊÊÊÊÊ 9097250 TOSHIBA bbC 08093 CDISCRETE/OPTO 0 ^ 2 3 -// BU126 SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE NPN SILICON POWER TRANSISTOR' INTENDED Unit in mm


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    PDF 000flCH3 BU126 250MAX, bu126 Switched Mode Power Supply

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 1.i. Cl f i cf r r c2c q Cl in Bi Ei nu b 2 UT1 Ë2 PARTMARKING DETAIL - T1048 ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L C o lle cto r-B a se V o ltag e VcBO VALUE UNIT


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    PDF ZDT1048 T1048 100mA

    260TC

    Abstract: KSE3055T
    Text: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 High Current Gain-Bandwidth Product fr = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emltter Voltage


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    PDF KSE3055T O-220 200mA, 500mA, 500KHz DQ25554 260TC KSE3055T