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    VBE 40 TRANSISTOR Search Results

    VBE 40 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VBE 40 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    STA5050

    Abstract: STA3878 2n389 2N3054 2N3441 STA3879 STC40250 STC40310 STC40312 STC40324
    Text: Silicon power transistors NPN TO-66 = 1.0 to 7.0 A Type# 2N3054 STC40250 STC40310 STC40312 STC40316 STC40324 Typical Values VcEOISUS Volts) 55 40 35 60(Vcer) 40(Vcer) 35 @ Ic/VcE (Min-Max @ A/V) Vbe @ Ic/VcE (V @ A/V) VcE(SAT) @ Ic/ I b (V @ A/A) fT = 0.75 to 60 MHz


    OCR Scan     		2N3054 STC40250 STC40310 STC40312 STC4031E 20-1lts) 2N389 2N389A 2N424 STA5050 STA3878 2N3441 STA3879 STC40324 PDF

    mmbta12

    Abstract: No abstract text available
    Text: zn i\ micanductor NATL Surface Mount Transistors Type No. Case Style MMBT6426 VcbO VcEO V ebo V Min Min (V) Min TO-236 (49) 40 40 MMBTA12 TO-236 (49) MMBTA13 MMBTA14 •ces * 'CBO @ VCB @lc 4V hFE ce VCE(SAT) VBE(sa T) Max (V) Min Max <v) 1 1 C0b (PF) Max


    OCR Scan     		MMBT6426 O-236 MMBTA12 MMBTA13 MMBTA14 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


    OCR Scan     		0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766 PDF

    TN2218A

    Abstract: CN100A CN100B CSC2330 CSC2330R CSC2330Y CSC2331 CSC2331R CSC2331Y VC80
    Text: TO-237 Plastic Package Transistors NPN M axim um R a tin gs Type No. Electrical C haracte ristics (Ta=25°C, U n le ss Otherw ise Specified) Ic & ^CE (mA) (V) ^CE(SAT] VBE(SAT) 3 (mA) (V) & (V) Max Min Max @ toff) (ns) Max COIL Case Style (V) 1 0.05 40 40


    OCR Scan     		O-237 CN100A O-237-1 CN100B CSC2330 CSC23300 CSC2330R TN2218A CSC2330Y CSC2331 CSC2331R CSC2331Y VC80 PDF

    Untitled

    Abstract: No abstract text available
    Text: Saturated Switching Transistors Part No. Polarity VCEO V Bipolar Transistors hFE @ VCE & IC Min. Max. VCE(sat) & VBE(sat) @ IC & IB VCE IC (V) t(off) Pins Package (mA) (ns) 123 Bulk/Reel Max. (V) IC IB (mA) Max. (V) (mA) PN2369A NPN 15 40 120 1.0 10 0.20


    Original     		PN2369A PN3646 PN3640 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420 PDF

    2n511

    Abstract: 2N511A Texas Germanium 2N511B Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power
    Text: TYPES 2N511, 2N511A, AND 2N511B P-N-P ALLOY-JUNCTION GERMANIUM HI6H-P0WER TRANSISTORS 40, 60 or 80 V01TS 10-A M P COLLECTOR CURRENT 150 -W ATT DISSIPATION lO W Ijo LOW VBE LOW THERMAL RESISTANCE for HIGH-POWER CONVERSION • HIGH-CURRENT SWITCHING AUDIO AMPLIFIER OUTPUT STAGES


    OCR Scan     		2N511, 2N511A, 2N511B V01TS 2N511A 2n511 Texas Germanium Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power PDF

    2N2067

    Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
    Text: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE


    OCR Scan     		2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B 2N1183 Ind50-100/3/2 2N1541S 2N15425 2N2067 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1184A PDF

    ZTX300

    Abstract: a1507 DSA003764
    Text: NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX300 ZTX300 ISSUE 2 – MARCH 94 TYPICAL CHARACTERISTICS 0.95 0.25 0.90 0.20 VCE sat - (Volts) VBE(sat) - (Volts) IC/IB=30 IC/IB=10 0.85 IC/IB=30 0.80 0.75 C B 0.15 IC/IB=10 0.70 10 20 30 40 50 60 ABSOLUTE MAXIMUM RATINGS.


    Original     		ZTX300 100MHz ZTX300 a1507 DSA003764 PDF

    KSC1330

    Abstract: KSC839 vef 202 KSC2884 KSA1202
    Text: TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Device and Polarity NPN PNP KSP6602 Condition VcEO lc (V) (A) 1 40 hFE VCE (V) lc (A) MIN 1 500 50 Condition MAX VCE(sat), VBE(sat)(V) lc (mA) ^0 (mA) MAX MAX 1000 100 0.6 1.2 Condition fT(MHz)


    OCR Scan     		KSP6602 2N4401 KSP2222 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSC839 vef 202 KSC2884 KSA1202 PDF

    h06A

    Abstract: MAT01AH MAT01 MAT01GH MAT01N "Dual npn Transistor" MAT-01AH
    Text: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Matched Monolithic Dual Transistor


    Original     		MAT01 MAT01 C00282 H-06A h06A MAT01AH MAT01GH MAT01N "Dual npn Transistor" MAT-01AH PDF

    MAT01

    Abstract: MAT01AH MAT01GH MAT01N
    Text: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Matched Monolithic Dual Transistor


    Original     		MAT01 MAT01 MAT01AH MAT01GH MAT01N PDF

    ZTX500

    Abstract: ztx500 equivalent DSA003767
    Text: ZTX500 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX500 ISSUE 1 – MARCH 94 0.95 0.25 0.90 0.20 0.85 IC/IB=10 0.80 IC/IB=30 VCE sat - (Volts) VBE(sat) - (Volts) TYPICAL CHARACTERISTICS C B 0.15 0.05 0.70 10 30 40 50 60 ABSOLUTE MAXIMUM RATINGS. 10 20 IC - Collector Current (mA)


    Original     		ZTX500 -50mA, -10mA, 100MHz ZTX500 ztx500 equivalent DSA003767 PDF

    MAT01AH

    Abstract: No abstract text available
    Text: Matched Monolithic Dual Transistor MAT01 Data Sheet PIN CONNECTION DIAGRAM Low VOS VBE match : 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz


    Original     		MAT01 MAT01 MAT01AH MAT01AHZ MAT01GH MAT01GHZ D00282-0-9/14 MAT01AH PDF

    2SC5249

    Abstract: FM20
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 PDF

    2SC5249

    Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
    Text: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A


    Original     		2SC5249 50typ 19max 600min 100max O220F) 2SC5249 FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor PDF

    b063

    Abstract: Concord Electronics DDG0133 Pirgo Electronics
    Text: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)


    OCR Scan     		13A0133 DDG0133 100mA 100mA, 500mA, 100mA 125mA b063 Concord Electronics Pirgo Electronics PDF

    2SC5370

    Abstract: FM20
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20 PDF

    "Dual npn Transistor"

    Abstract: MAT01 8c 617 transistor high gain low voltage NPN transistor MAT01AH MAT01GH MAT01N
    Text: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form Matched Monolithic


    Original     		MAT01 MAT01 H-06A "Dual npn Transistor" 8c 617 transistor high gain low voltage NPN transistor MAT01AH MAT01GH MAT01N PDF

    2N3055

    Abstract: 2n3773 power Amplifier 2N3442 2N1487 2N1488 2N1489 2N1490 2N3232 2N3235 STC40251
    Text: Silicon power transistors IlFE @ Ic/VCE Type# IS/b Vce sat ] @ Ic / I b VcEO|SUS| (Volts (Min-Max @ A/V) (V @ A/A) Vbe @ Ic:/V cf (V @ A/V) ICEV @ Vce (mA @ V) @ Vce Pd @ t — 11sec Tc = 25°C 0 J C (Watts) (°C/W) (A @ V) tO N fi (MHz) 2N1487 40 [email protected]/4


    OCR Scan     		2N1487 2N1490 2N1488 2N1489 75ier STA3446 STA3447 STA3448 STA8350 2N3055 2n3773 power Amplifier 2N3442 2N3232 2N3235 STC40251 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2


    OCR Scan     		0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2B14 2N3487 2N3488 PDF

    2SC5370

    Abstract: FM20 2402 transistor
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20 2402 transistor PDF

    MAT01AH

    Abstract: 8c 617 transistor MAT01 MAT01GH MAT01N
    Text: a FEATURES Low VOS VBE Match : 40 ␮V typ, 100 ␮V max Low TCVOS: 0.5 ␮V/؇C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form Matched Monolithic


    Original     		MAT01 MAT01 H-06A MAT01AH 8c 617 transistor MAT01GH MAT01N PDF

    pnp 900v

    Abstract: SRSP5014 L3045 2N5415 2N1480 2N1481 2N1482 2N2911 2N5784 2N5786
    Text: Silicon power transistors NPN TO-5 = 1.0 to 3.5A fT = 1.0 to 40 MHz V ce o is u s = 4 0 to 9 0 0 V I if e Type# PNP Comple­ VcEO SUS) ment (Volts) @ Ic/VcE (Min-Max @ A /V ) VcE(SAT) @ Ic / I b (V @ A/A) Vbe @ Ic/VcE (V @ A/V) Pd @ ( lie Cob fr Te = 25°C


    OCR Scan     		2N1479 2N1480 2N1481 2N1482 2N5784 2N5785 2N5786 STC40347 STC40348 SRS3004M pnp 900v SRSP5014 L3045 2N5415 2N2911 PDF