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    VCE 100V TRANSISTOR Search Results

    VCE 100V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    VCE 100V TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Zetex ZXTP19100CZ

    Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541 Zetex ZXTP19100CZ TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA PDF

    ZXTN19100CFF

    Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541 PDF

    ZXTN25100CFH

    Abstract: design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541 ZXTN25100CFH design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER PDF

    ZXTN25100DFH

    Abstract: ZXTN25100DFHTA ZXTP25100DFH
    Text: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTN25100DFH ZXTP25100DFH ZXTN25100DFH ZXTN25100DFHTA ZXTP25100DFH PDF

    ZXTP25100DFH

    Abstract: ZXTN25100DFH ZXTN25100DFHTA
    Text: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTN25100DFH ZXTP25100DFH ZXTP25100DFH ZXTN25100DFH ZXTN25100DFHTA PDF

    ZXTN19100CFF

    Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN
    Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the


    Original     		ZXTN19100CFF OT23F, ZXTP19100CFF OT23F D-81541 ZXTN19100CFF TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX593 100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -100V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Collector Current • Low saturation voltage VCE sat < -200mV @ -250mA


    Original     		FCX593 -100V -200mV -250mA FCX493 AEC-Q101 J-STD-020 DS33063 PDF

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the


    Original     		ZXTN19100CFF OT23F, ZXTP19100CFF OT23F D-81541 PDF

    TS16949

    Abstract: ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA
    Text: ZXTP25100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 1A VCE(sat) < -225mV @ 1A RCE(sat) = 155m⍀ PD = 2.4W Complementary part number ZXTN25100DZ Description C Advanced process capability and package design have been used to


    Original     		ZXTP25100CZ -100V -225mV ZXTN25100DZ D-81541 TS16949 ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA PDF

    ZXTN25100BFHTA

    Abstract: ZXTN25100BFH ZXTP25100BFH h 033
    Text: ZXTN25100BFH 100V, SOT23, medium power transistor Summary BVCEX > 170V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m⍀ PD = 1.25W Complementary part number ZXTP25100BFH Description C Advanced process capability and package design have been used to


    Original     		ZXTN25100BFH ZXTP25100BFH ZXTN25100BFHTA ZXTN25100BFH ZXTP25100BFH h 033 PDF

    2SA1644

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)


    Original     		2SA1644 -100V -100V; 2SA1644 PDF

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ PDF

    ZXTN25100CFH

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25100CFH 100V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A VCE sat < -220mV @ -1A


    Original     		ZXTP25100CFH -100V -220mV ZXTN25100CFH AEC-Q101 J-STD-020 MIL-STD-202, DS33758 PDF

    Zetex ZXTP19100CZ

    Abstract: No abstract text available
    Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19100CZ ZXTP19100CZ D-81541 Zetex ZXTP19100CZ PDF

    marking 12W SOT23

    Abstract: ZXTN2020F
    Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to


    Original     		ZXTN2020F ZXTP2029F ZXTN2020FTA marking 12W SOT23 PDF

    2SA1645

    Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A)


    Original     		2SA1645 -100V 2SA1645 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A PDF

    12W MARKING sot23

    Abstract: marking 12W SOT23 ZXTN2020F ZXTP2029F ZXTP2029FTA
    Text: ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V BR CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number: ZXTN2020F Description Advanced process capability and package design have been used to


    Original     		ZXTP2029F -130V, -100V -80mV ZXTN2020F 12W MARKING sot23 marking 12W SOT23 ZXTN2020F ZXTP2029F ZXTP2029FTA PDF

    marking 12W SOT23

    Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
    Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to


    Original     		ZXTN2020F ZXTP2029F marking 12W SOT23 ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23 PDF

    ZXTN25100DG

    Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG
    Text: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		ZXTN25100DG OT223 100mV ZXTP19100CG OT223 D-81541 ZXTN25100DG ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG PDF

    ZXTP

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1


    Original     		ZXTP4003G OT223 -100V -150mA, AEC-Q101 J-STD-020 OT223 ZXTP4003GTA ZXTP PDF