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    VCE 1200 AND 5 AMPS NPN TRANSISTOR TO 220 PACK Search Results

    VCE 1200 AND 5 AMPS NPN TRANSISTOR TO 220 PACK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    VCE 1200 AND 5 AMPS NPN TRANSISTOR TO 220 PACK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 PDF

    221D

    Abstract: MJE18206 MJE210 MJF18206 MPF930 MTP12N10 MTP8P10 MUR105 k 373
    Text: MOTOROLA Order this document by MJE18206/D SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES


    Original     		MJE18206/D MJE18206 MJF18206 MJE/MJF18206 MJE18206/D* 221D MJE18206 MJE210 MJF18206 MPF930 MTP12N10 MTP8P10 MUR105 k 373 PDF

    MJE 280 power transistor

    Abstract: 100 Amp current 1300 volt diode 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES


    Original     		MJE18204/D MJE18204 MJF18204 MJE/MJF18204 MJE18204/D* MJE 280 power transistor 100 Amp current 1300 volt diode 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    221D

    Abstract: MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES


    Original     		MJE18204/D MJE18204 MJF18204 MJE/MJF18204 MJE18204/D* 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    MJE18002

    Abstract: MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18002 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		MJE18002 MJE18002 O-220 MJE18002/D MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    MJE18002G

    Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		MJE18002G MJE18002G O-220 O-220AB 21A-09 MJE18002/D MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.


    Original     		MJE18002G MJE18002G 220AB MJE18002/D PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJE18206 MJF18206 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art


    Original     		MJE/MJF18206 MJE18206 MJF18206 r14525 MJE18206/D PDF

    MJE18002

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a
    Text: ON Semiconductort MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die


    Original     		MJE18002 MJE18002 r14525 MJE18002/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a PDF

    MJE18002

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die


    Original     		MJE18002 MJE18002 r14525 MJE18002/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    JE182

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18204 M JF18204 Designer’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POW ER TRANSISTORS 5 A M PERES 1200 VOLTS 35 and 75 WATTS


    OCR Scan     		MJE/MJF18204 O-220 AN1040. JE182 PDF

    1N5761

    Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
    Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		BUL45 O-220AB 21A-09 BUL45/D 1N5761 marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS


    OCR Scan     		MJE/MJF18206 AN1040. PDF

    toroid FT10

    Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
    Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45/D BUL45 BUL45F* BUL45F BUL45/D* toroid FT10 MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629 PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    1N5761

    Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
    Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F*  Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45/D BUL45 BUL45F* BUL45F BUL45/D* 1N5761 RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10 PDF

    c 945 TRANSISTOR equivalent

    Abstract: FDC655 fairchild power bjt ignition drivers
    Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


    Original     		FJBE2150D FDC655 c 945 TRANSISTOR equivalent fairchild power bjt ignition drivers PDF

    Untitled

    Abstract: No abstract text available
    Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


    Original     		FJBE2150D FDC655 FJBE2150D PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    vce 1200 and 5 amps npn transistor to 220 pack

    Abstract: MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The MJE/MJF18002 have an applications specific state–of–the–art die designed


    Original     		MJE18002/D MJE18002* MJF18002* MJE/MJF18002 MJE18002/D* vce 1200 and 5 amps npn transistor to 220 pack MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105 PDF