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    VCE MAX 100 IC MAX 100MA NPN Search Results

    VCE MAX 100 IC MAX 100MA NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    VCE MAX 100 IC MAX 100MA NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Darlington pair IC

    Abstract: marking cb b54 marking MPT3 MARKING DF ad marking diagram
    Text: Transistors For Medium Power Amplification Part No. Package SST3 SMT3 SSTA56 MMSTA56 BV cbO BVceO BVebo Min. Min. M in. 80V I I 80V , 4V Ic b o @Vcb . ^ @IC & VCE VUE 8aÖ Mm. Max. Max. Max. , 100nA 80V , . 100 10mA 1V 100 100mA 1V & VM (Sat Max. 0.25V


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    SSTA56 MMSTA56 100nA 100mA 500mA 100mA 50MHz MMSTA64 Darlington pair IC marking cb b54 marking MPT3 MARKING DF ad marking diagram PDF

    ZTX869

    Abstract: PS 307 5A DSA003778
    Text: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


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    ZTX869 100mA, 50MHz 100mA 100ms ZTX869 PS 307 5A DSA003778 PDF

    2M5087

    Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
    Text: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.


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    100nA 200mA 2N2925 2N3711 MPS3711 2N3860 2N5088 160MHz 100mA 2M5087 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp PDF

    t6753

    Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage


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    ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725 PDF

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


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    OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598 PDF

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


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    ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778 PDF

    ZTX658

    Abstract: NPN Transistor TO92 5V 200mA DSA003772
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Transition Frequency fT TYP. MAX. UNIT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff


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    ZTX658 20MHz 100mA, -20mA 100ms ZTX658 NPN Transistor TO92 5V 200mA DSA003772 PDF

    Untitled

    Abstract: No abstract text available
    Text: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers


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    2N2925 100nA 2N3711 MPS3711 MPS-A65 100nA 100mA 100MHz PDF

    FMMT497

    Abstract: FMMT597 0401mA DSA003696
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 – DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE sat v IC V+-=10V 0.9 +100 °C


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    FMMT497 100mA 100mA, 250mA, 100MHz FMMT497 FMMT597 0401mA DSA003696 PDF

    base resistance for SOT23

    Abstract: FMMT491 FMMT591 DSA003695
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491 FMMT491 ISSUE 3 - OCTOBER 1995 ✪ FEATURES * Low equivalent on-resistance; RCE sat 210mΩ at 1A TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 COMPLEMENTARY TYPE PARTMARKING DETAIL -


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    FMMT491 FMMT591 500mA, 100MHz base resistance for SOT23 FMMT491 FMMT591 DSA003695 PDF

    T1048

    Abstract: ZDT1048 DSA003723 zetex t1048
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1048 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage


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    ZDT1048 OT223) T1048 100mV 100mA 50MHz T1048 ZDT1048 DSA003723 zetex t1048 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZTX656 Not Recommended for New Design Please Use ZTX657 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain %


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    ZTX656 ZTX657 ZTX657 IC/10 100ms PDF

    ZTX657

    Abstract: ZTX656 DSA003772
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.8 100 hFE - Normalised Gain % 1.6 VCE(sat) - (Volts) 1.4 1.2 IC/IB=10


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    ZTX656 ZTX657 100mA, ZTX657 ZTX656 DSA003772 PDF

    MPS-004

    Abstract: MPS004 2N4125 EBC 2n3704
    Text: T ransistors TO-92 JEDEC Standards Numbers #NPN Transistors General purpose small signal amplifiers Part No. Package BVcbo Min. BVceo Min. BVebo Min. iCBO Max. @VCB Min. Max. @lc & Vce V ce (sat) Max. 4 Vbe (sat) Max. @lc Cob Max. Min. 10pF 180MHz fr @ Ic


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    2N2925 2N3711 MPS3711 2N3860 100nA 180MHz 200mA MPS-A63 MPS-004 MPS004 2N4125 EBC 2n3704 PDF

    ZTX853

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


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    ZTX853 100mA, 50MHz 100mA 100ms ZTX853 DSA003778 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current


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    FMMT494 100mA 100ms 250mA, 500mA, PDF

    100mA-1A

    Abstract: FMMT591A npn 41A FMMT491A DSA003696 1A-10A
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 I+/I*=10 I+/I*=50 I+/I*=100


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    FMMT491A 100mA 100ms 100us FMMT591A 500mA, 100MHz 100mA-1A FMMT591A npn 41A FMMT491A DSA003696 1A-10A PDF

    FZT757

    Abstract: 200V 100MA NPN t6757 FZT657
    Text: Obsolete. Nearest alternative is ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757


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    ZDT6753 ZDT6757 T6757 OT223) -10mA, -160V, -200V, -100mA, -10mA* FZT757 200V 100MA NPN t6757 FZT657 PDF

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


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    OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5 PDF

    ZBD849

    Abstract: transistor bf 970
    Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching


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    ZBD849 ZBD849 transistor bf 970 PDF

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


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    GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55 PDF

    FMMT494

    Abstract: DSA003696
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL – TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C B 0.3 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current


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    FMMT494 100mA 50age 100ms 250mA, FMMT494 DSA003696 PDF

    FMMT618

    Abstract: No abstract text available
    Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.


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    FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 625mW FMMT617 FMMT717 FMMT718 FMMT618 PDF

    ZTX696B

    Abstract: transistor 3247 DSA003773 ZTX696
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX696B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER Transition Frequency SYMBOL fT Input Capacitance Output Capacitance Switching Times Cibo Cobo ton toff MIN. 70 TYP. MAX. 200 6 80 4400 UNIT


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    ZTX696B 50MHz 100mA, 100mA 100ms ZTX696B transistor 3247 DSA003773 ZTX696 PDF