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    VCEO 80V IC 1A Search Results

    VCEO 80V IC 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SZ07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7W66FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-765 (US8), 2 in 1, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SET125F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-25 (SMV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7WH125FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-505 (SM8), 2 in 1, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    VCEO 80V IC 1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPN transistor 2sd1863

    Abstract: 80V 1A NPN Transistor 2SB1260 2SD1733 2SD1768S 2SD1898 2SB1181 2SD1863 Vceo 80V Ic 1A 2SB1241
    Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F NPN transistor 2sd1863 80V 1A NPN Transistor 2SB1181 Vceo 80V Ic 1A PDF

    80V 1A NPN Transistor

    Abstract: 2SD1898 2SD1768S NPN transistor 2sd1863 2SD1768 2SD1863 2SB1181 2SD1733 2SB1241 2SB1260
    Text: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F 2SB1260 2SB1241 2SB1181. 96-739-D54) 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 80V 1A NPN Transistor NPN transistor 2sd1863 2SD1768 2SB1181 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 SC-63 R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type


    Original     		2SD1898 2SD1733 2SB1260 2SB1181 2SD1898 SC-62 R1120A PDF

    2SD1898

    Abstract: No abstract text available
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 1.5 ±0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SB1260 2SB1241 2SB1181 2SD1898 SC-62 2SD1733 PDF

    2SB1181

    Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zDimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1241 2SB1181 SC-62 2SD1733 2SB1181 2SD1863 SC-72 PDF

    2SD1898

    Abstract: 2SD1768 2SB1181 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 SC-72 DASF002499
    Text: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity


    Original     		2SD1898 2SD1733 2SD1768S 2SD1863 2SD1898 2SB1260 2SB1241 2SB1181 SC-62 2SD1733 2SD1768 2SB1181 2SD1863 SC-72 DASF002499 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO


    Original     		2SD1898 40X40X0 500mA -50mA, 100MHz PDF

    VCEO80V

    Abstract: FMMT620 FMMT620TA FMMT620TC
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		FMMT620 INFORMA26100 VCEO80V FMMT620 FMMT620TA FMMT620TC PDF

    FMMT620

    Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
    Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users


    Original     		FMMT620 INFOR43-7100 FMMT620 450-170 FMMT620TA FMMT620TC PD6255 DSA003701 PDF

    Vceo 80V Ic 0.5A

    Abstract: 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor
    Text: Transistors SMD Type Power Transistor 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage


    Original     		2SD1898 40X40X0 500mA -50mA, 100MHz Vceo 80V Ic 0.5A 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor PDF

    transistor b54

    Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
    Text: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)


    Original     		2SB1260 2SB1181 2SB1241 2SD1898 2SD1863 2SD1733. 96-123-B54) transistor b54 transistor 222 2sB1241 2SD1733 high hfe transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR544P Data Sheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Base Collector Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA)


    Original     		2SCR544P SC-62) OT-89> 2SAR544P A/50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE sat)


    Original     		2SB1260 2SB1181 2SD1898 2SD1733 -500mA/ -50mA) 2SB1260 SC-62) OT-89> PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		2SD1733 O-252 500mA -50mA, 100MHz PDF

    NPN Transistor VCEO 80V 100V

    Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
    Text: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15


    Original     		2SD1733 O-252 500mA -50mA, 100MHz NPN Transistor VCEO 80V 100V 2SD1733 NPN Transistor VCEO 80V 100V hfe 100 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package


    Original     		ZXTN620MA ZXTEM322 MLP322 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR544P Data Sheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Base Collector Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P 3) Low VCE(sat)


    Original     		2SAR544P SC-62) OT-89> 2SCR544P -50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A TSMT3 Collector Base Emitter 2SAR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)


    Original     		2SAR544R SC-96) 2SCR544R -50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR544P / 2SCR544D Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P / 2SAR544D


    Original     		2SCR544P 2SCR544D 2SCR544P SC-62) OT-89> 2SAR544P 2SAR544D A/50mA) SC-63) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D


    Original     		2SAR544P 2SAR544D 2SAR544P SC-62) OT-89> 2SCR544P 2SCR544D -50mA) SC-63) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A TSMT3 Collector Base Emitter 2SCR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)


    Original     		2SCR544R SC-96) 2SAR544R A/50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SAR544P 2SAR544PFRA Data Sheet PNP -2.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Base Collector Emitter 2SAR544PFRA 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544PFRA


    Original     		2SAR544P 2SAR544PFRA AEC-Q101 SC-62) OT-89> 2SCR544PFRA 2SCR544P -50mA) PDF