VD F1 SMD
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
|
Original
|
PDF
|
MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
VD F1 SMD
|
Untitled
Abstract: No abstract text available
Text: CHA3656-QAG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial
|
Original
|
PDF
|
CHA3656-QAG
8-17GHz
CHA3656-QAG
A3656
17GHz
24dBm
14dBm
16L-QFN3Xse
DSCHA3656-QAG3156
|
60Ghz
Abstract: MGF0915A a4013
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
|
Original
|
PDF
|
MGF0915A
MGF0915A
23dBm
50pcs)
60Ghz
a4013
|
MGF0919A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
|
Original
|
PDF
|
MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
|
rgk 20/2
Abstract: TS420-B TS420-T
Text: TS420-B/T SENSITIVE SCR FEATURES A IT RMS = 4A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K The TS420-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.
|
Original
|
PDF
|
TS420-B/T
TS420-B/T
O-220AB
TS420-T
TS420-B
rgk 20/2
TS420-B
TS420-T
|
rgk 20/2
Abstract: TS820-B TS820-T TS820 ts820b
Text: TS820-B/T SENSITIVE SCR FEATURES A IT RMS =8A VDRM/VRRM = 400, 600V, 700V IGT < 200µA SMD PACKAGE A A DESCRIPTION G K K The TS820-B/T series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount or through hole technology.
|
Original
|
PDF
|
TS820-B/T
TS820-B/T
O-220AB
TS820-T
TS820-B
10mications
rgk 20/2
TS820-B
TS820-T
TS820
ts820b
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
|
Original
|
PDF
|
MGF0915A
MGF0915A
23dBm
50pcs)
|
MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
|
Original
|
PDF
|
MGF0913A
MGF0913A
31dBm
18dBm
200mA
|
FET K 3728
Abstract: an 17830 IDS800 MGF0915A 4604 smd fet PO 168 GP 703
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
|
Original
|
PDF
|
MGF0915A
MGF0915A
23dBm
FET K 3728
an 17830
IDS800
4604 smd fet
PO 168
GP 703
|
MGF0916A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm
|
Original
|
PDF
|
MGF0916A
MGF0916A
23dBm
100mA
|
D2 DIN 6784
Abstract: ISM2400 VD F1 SMD SMD MARKING CODE V6 03 SMD MARKING CODE V6 smd marking 806 ISM900 MS11 MS21 MS22
Text: GaAs MMIC CGY 63 Preliminary Data Sheet • • • • • • • • • Broadband Driver Amplifier 800 … 2500 MHz Bluetooth, ISM900, ISM2400 Base Station Driver Amplifier Single Voltage Supply Operating voltage range: 2.7 to 6 V Pout = 20.0 dBm at VD = 3.0 V (CW)
|
Original
|
PDF
|
ISM900,
ISM2400
Q62702-G0115
SCT-595
GPW05997
D2 DIN 6784
ISM2400
VD F1 SMD
SMD MARKING CODE V6 03
SMD MARKING CODE V6
smd marking 806
ISM900
MS11
MS21
MS22
|
Untitled
Abstract: No abstract text available
Text: SMD Varistor OUTLINE DIMENSIONS VR-61F1 2.0 1.5 ±0.2 F1 1N 2.5 ±0.3 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン 1.2 ±0.3 1.2 ±0.3 0.1±0.1 2.0 ±0.3 0.2 0.9 5.0 ±0.3 単位：mm
|
Original
|
PDF
|
VR-61F1
100kHz
50mVrms
|
mitsubishi 7805
Abstract: 7805 pi MGF0918A 7805 smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
|
Original
|
PDF
|
MGF0918A
MGF0918A
27dBm
150mA
50pcs)
d-162
mitsubishi 7805
7805 pi
7805 smd
|
MGF0919A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
|
Original
|
PDF
|
MGF0919A
MGF0919A
30dBm
12dBm
300mA
50pcs)
|
|
|
SMD GP 113
Abstract: MGF0921A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
|
Original
|
PDF
|
MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
SMD GP 113
|
MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
|
Original
|
PDF
|
MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
|
4977 gm
Abstract: MGF0919A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
|
Original
|
PDF
|
MGF0919A
MGF0919A
30dBm
12dBm
300mA
4977 gm
|
MGF0920A
Abstract: n channel fet k 1118
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
|
Original
|
PDF
|
MGF0920A
MGF0920A
32dBm
15dBm
400mA
n channel fet k 1118
|
MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
|
Original
|
PDF
|
MGF0913A
MGF0913A
31dBm
18dBm
200mA
|
Untitled
Abstract: No abstract text available
Text: COMPUTI NG AND NETWORKING Figure 1. Block Diagram FB IN GND GA1087 R E F C LK G N D F1 FO G ND rrn m m i e i i t i m nr T ES T VD D QO G ND Q1 Q2 X EE E- VD D Phase Detector Q10 VCO 3 15 Divide Logic * 4 , +5, o r +6 [ ¡6 E Output Butlers j , ! Group A
|
OCR Scan
|
PDF
|
GA1087
11-Output
GA1087
|
Untitled
Abstract: No abstract text available
Text: II s’ !' “ '• '■<: ! I, ! Il W ' j T. I /. I 'j li U 's ! >J o S1 ll , I /V 's . P R E L IM IN A R Y Figure 1. Block Diagram FBIN 'J GA1088 R E F C LK SO F1 FO GND ni nri m m m m rr 11-Output TES T Configurable Clock Buffer VD D QO Features GND * Q1
|
OCR Scan
|
PDF
|
GA1088
11-Output
GA1088
|
Untitled
Abstract: No abstract text available
Text: ff / il ! r'¡ S E M I C O N D U C T O ! F; , I N C 7 COMPUTING AND NETWORK N G Figure 1. Block Diagram FBIN SI GA1085 R EFC LK SO F1 FO GND i~ñ~i [T5~i 1 9 11~81rn [~t] fr VD D Phase Delectar VDD Q 10 Phase Select VCO OO G ND Q9 E G ND Divide Logic r 4 , -r5, or *6
|
OCR Scan
|
PDF
|
GA1085
|
socket g34 pinout
Abstract: smd marking WMM
Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02
|
OCR Scan
|
PDF
|
HC6664
1x10s
1x1014N/cm2
1x109
MIL-l-38535
36-LE
28-LEAD
HC6364/1
socket g34 pinout
smd marking WMM
|
smd TRANSISTOR code marking 8K
Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
Text: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)
|
OCR Scan
|
PDF
|
1x106
1x1014N/cm2
1x109
1x101
36-Pin
28-Pin
MIL-l-38535
36-LEAD
28-LEAD
HC6364/1
smd TRANSISTOR code marking 8K
pepi c
TRANSISTOR SMD MARKING CODE QO
SMD MARKING code 4N
|
